GMF05G1 [VISHAY]
DIODE 200 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE, Transient Suppressor;
| 型号： | GMF05G1 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 200 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE, Transient Suppressor 电视 |
| 文件： | 总2页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GMF05
New Product
Vishay Semiconductors
formerly General Semiconductor
TVS Diode Array
For ESD & Latch-Up Protection
SOT-353
0.087 (2.20)
0.071 (1.80)
Pin Configuration (Top View)
Top View
5
4
0.087 (2.20)
0.079 (2.00)
0.053 (1.35)
0.045 (1.15)
1
2
3
0.012 (0.30)
0.009 (0.20)
Mounting Pad Layout
0.026 (0.65)
0.063 (1.60)
Dimensions in inches
and (millimeters)
0.052 (1.3)
0.052 (1.30)
0.01 (0.25)
Ref.
0.004 (0.10)
0.039 (1.00)
0.031 (0.80)
0.004 (0.10)
0.026 (0.65)
Ref.
0.014 (0.35)
10° Typical
0.035
Features
Mechanical Data
Case: SOT-353 package
Molding Compound Flammability Rating: UL 94V-0
Terminals: High temperature soldering guaranteed:
250°C/10 sec. at terminals
Marking Code: GE5
• Transient protection for data lines as per
IEC 1000-4-2 (ESD) 15kV (air), 8kV (contact)
IEC 1000-4-4 (EFT) 40A (tp = 5/50ns)
IEC 1000-4-5 (Lightning) 12A (tp = 8/20µs)
• Small package for use in portable electronics
• Unidirectional protection of 4 I/O lines
• Low leakage current
Packaging Codes - Options:
G1 - 10K per 13” reel, 30K/box
G2 - 3K per 7” reel, 30K/box
• Low operating and clamping voltages
• Ideal for cellular handsets, cordless phones, notebooks
and handhelds, and digital cameras
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Pppm
IPP
Value
Unit
W
Peak Pulse Power 8/20µs waveform
Peak Pulse Current 8/20µs waveform
Operating Temperature
200
12
A
TJ
–55 to +125
–55 to +150
°C
°C
Storage Temperature
TSTG
Electrical Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Minimum
Typical
Maximum
Unit
V
Reverse Stand-Off Voltage
VRWM
–
6
–
–
–
–
5
–
V
Reverse Breakdown Voltage at It = 1mA
Reverse Leakage Current at VRWM = 5V
VBR
IR
10
µA
Clamping Voltage at IPP = 1A, 8/20µs waveform
at IPP = 12A, 8/20µs waveform
9.5
12.5
VC
VF
Cj
–
–
–
–
1.5
–
V
V
Peak Forward Voltage at IF = 1A, 8/20µs waveform
–
Junction Capacitance between I/O pins and Gnd
VR = 0V, f = 1MHZ
150
pF
Document Number 88337
28-Feb-02
www.vishay.com
1
GMF05
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Non-Repetitive Peak Pulse Power
Fig. 2 – Pulse Derating Curve
vs. Pulse Time
100
10
75
50
1
0.1
25
0
0.01
25
50
75
150
175
0
100
125
0.1
1.0
10
100
1000
td — Pulse Duration (µs)
TA — Ambient Temperature (°C)
Fig. 4 – Clamping Voltage
vs. Peak Pulse Current
Fig. 3 – Pulse Waveform
20
18
16
14
110
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
100
90
80
70
12
10
8
60
50
40
IPP
2
td
=
6
4
2
0
30
20
10
0
2
4
10
12
0
6
8
14
5
10
25
0
15
20
30
IPP — Peak Pulse Current (A)
t — Time (µs)
Fig. 5 – Typical Junction Capacitance
200
180
160
140
120
100
80
60
1
2
5
0
3
4
6
VR - Reverse Voltage (V)
www.vishay.com
2
Document Number 88337
28-Feb-02
相关型号：
GMF05LC-HSF-GS08
DIODE 70 W, BIDIRECTIONAL, 5 ELEMENT, SILICON, TVS DIODE, GREEN, ULTRA COMPACT, PLASTIC, LLP75-6L, 6 PIN, Transient Suppressor
VISHAY
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