GMF05LC-HSF-GS08 [VISHAY]
DIODE 70 W, BIDIRECTIONAL, 5 ELEMENT, SILICON, TVS DIODE, GREEN, ULTRA COMPACT, PLASTIC, LLP75-6L, 6 PIN, Transient Suppressor;
| 型号： | GMF05LC-HSF-GS08 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 70 W, BIDIRECTIONAL, 5 ELEMENT, SILICON, TVS DIODE, GREEN, ULTRA COMPACT, PLASTIC, LLP75-6L, 6 PIN, Transient Suppressor 局域网 光电二极管 电视 |
| 文件： | 总7页 (文件大小：173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GMF05LC-HSF
Vishay Semiconductors
www.vishay.com
5-Line ESD Protection Diode Array in LLP75-6L
FEATURES
• Ultra compact LLP75-6L package
• Low package profile < 0.6 mm
• 5-line ESD protection
6
1
5
4
3
• Low leakage current IR < 0.1 μA
• Low load capacitance of typ. 43 pF at VR = 0 V
2
• ESD immunity acc. IEC 61000-4-2
19957
19956
30 kV contact discharge
30 kV air discharge
1
MARKING (example only)
• Working voltage range VRWM = 5 V
• e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn)
XX
YY
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
21001
Dot = pin 1 marking
XX = date code
YY = type code (see table below)
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
ORDERING INFORMATION
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
(8 mm TAPE ON 7" REEL)
DEVICE NAME
ORDERING CODE
GMF05LC-HSF
GMF05LC-HSF-GS08
3000
15 000
PACKAGE DATA
PACKAGE
NAME
TYPE
CODE
MOLDING COMPOUND
MOISTURE
SOLDERING
CONDITIONS
DEVICE NAME
WEIGHT
FLAMMABILITY RATING SENSITIVITY LEVEL
MSL level 1
UL 94 V-0
GMF05LC-HSF
LLP75-6L
1B
4.2 mg
260 °C/10 s at terminals
(according J-STD-020)
ABSOLUTE MAXIMUM RATINGS GMF05LC-HSF
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
BiAs-mode: each input (pin 1; 3 to pin 6) to ground (pin 2);
acc. IEC 61000-4-5; tp = 8/20 μs; single shot
Peak pulse current
IPPM
5
A
BiAs-mode: each input (pin 1; 3 to pin 6) to ground (pin 2);
acc. IEC 61000-4-5; tp = 8/20 μs; single shot
Peak pulse power
ESD immunity
PPP
70
30
30
W
kV
kV
Contact
BiAs-mode: each input (pin 1; 3 to pin 6) to
discharge
ground (pin 2);
acc. IEC 61000-4-2; 10 pulses
VESD
Air
discharge
Operating temperature
Storage temperature
Junction temperature
TJ
-55 to +125
-55 to +150
°C
°C
TSTG
Rev. 1.5, 27-Apr-17
Document Number: 81200
1
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GMF05LC-HSF
Vishay Semiconductors
www.vishay.com
BiAs-MODE (5-line bidirectional asymmetrical protection mode)
With the GMF05LC-HSF up to 5 signal- or data-lines (L1 to L5) can be protected against voltage transients. With pin 2
connected to ground and pin 1; pin 3 up to pin 6 connected to a signal- or data-line which has to be protected. As long as the
voltage level on the data- or signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (VRWM
)
the protection diode between data-line and ground offer a high isolation to the ground line. The protection device behaves like
an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode
becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The
clamping voltage (VC) is defined by the breakthrough voltage (VBR) level plus the voltage drop at the series impedance
(resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of
the protection diode. The low forward voltage (VF) clamps the negative transient close to the ground level.
Due to the different clamping levels in forward and reverse direction the GMF05LC-HSF clamping behavior is bidirectional and
asymmetrical (BiAs).
L1
L5
L4
L3
1
2
3
5
4
3
Ground
L2
BiAs
20739
ELECTRICAL CHARACTERISTICS GMF05LC-HSF
PARAMETER
TEST CONDITIONS/REMARKS
Number of lines which can be protected
at IR = 1 μA
SYMBOL
Nchannel
VRWM
IR
MIN.
TYP.
-
MAX.
UNIT
lines
V
Protection paths
-
-
-
6
-
-
-
-
-
-
5
5
Reverse stand-off voltage
Reverse current
-
at VR = VRWM = 5 V
0.01
-
0.1
8
μA
V
Reverse breakdown voltage
at IR = 1 mA
VBR
at IPP = 1 A acc. IEC 61000-4-5
at IPP = IPPM = 5 A acc. IEC 61000-4-5
at IF = 1 A acc. IEC 61000-4-5
at IPP = IPPM = 5 A acc. IEC 61000-4-5
at VR = 0 V; f = 1 MHz
8
9.5
12.5
2
V
Reverse clamping voltage
Forward clamping voltage
Capacitance
VC
VF
11.5
1.5
3.1
43
25
V
V
4
V
50
-
pF
pF
CD
at VR = 2.5 V; f = 1 MHz
Note
Ratings at 25 °C ambient temperature, unless otherwise specified. BiAs mode: each input (pin 1, 2, 3, to 6) to ground (pin 2).
•
If a higher surge current or peak pulse current (IPP) is needed, some protection diodes in the GMF05LC-HSF can also be used
in parallel in order to “multiply” the performance.
If two diodes are switched in parallel you get
• double surge power = double peak pulse current (2 x IPPM
• half of the line inductance = reduced clamping voltage
• half of the line resistance = reduced clamping voltage
• double line capacitance (2 x CD)
)
• double reverse leakage current (2 x IR)
L1
L2
L3
1
6
5
4
2
3
Ground
20740
Rev. 1.5, 27-Apr-17
Document Number: 81200
2
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GMF05LC-HSF
Vishay Semiconductors
www.vishay.com
TYPICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
100
10
120 %
BiAs-mode
Rise time = 0.7 ns to 1 ns
100 %
80 %
1
60 %
53 %
0.1
40 %
27 %
0.01
0.001
20 %
0 %
0.5
0.6
0.7
0.8
0.9
1
-10
0
10 20 30 40 50 60 70 80 90 100
Time (ns)
20282
VF (V)
20557
Fig. 1 - ESD Discharge Current Wave Form
Fig. 4 - Typical Forward Current IF vs. Forward Voltage VF
acc. IEC 61000-4-2 (330 /150 pF)
10
8 µs to 100 %
100 %
80 %
60 %
40 %
20 %
9
BiSy-mode
8
7
6
5
4
3
2
1
0
BiAs-mode
20 µs to 50 %
0 %
0
10
20
30
40
0.01 0.1
1
10
100 1000 10 000
20548
20283
Time (µs)
IR (µA)
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
Fig. 5 - Typical Reverse Voltage VR vs. Reverse Current IR
16
50
f = 1 MHz
45
BiSy-mode
14
40
35
30
12
10
BiAs-mode
BiAs-mode
25
8
20
6
15
VC
4
BiSy-mode
10
2
5
0
Measured acc. IEC 61000-4-5 (8/20µs - wave form)
20284
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
20281
VR (V)
IPP (A)
Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR
Fig. 6 - Typical Peak Clamping Voltage VC vs.
Peak Pulse Current IPP
Rev. 1.5, 27-Apr-17
Document Number: 81200
3
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GMF05LC-HSF
Vishay Semiconductors
www.vishay.com
60
40
80
60
Acc. IEC 61000-4-2
- 8 kV
contact discharge
Acc. IEC 61000-4-2
+ 8 kV
contact discharge
20
40
0
20
- 20
- 40
- 60
- 80
0
- 20
- 40
- 60
- 10 0 10 20 30 40 50 60 70 80 90
- 10
0
10 20 30 40 50 60 70 80 90
t (ns)
21105
21106
t (ns)
Fig. 7 - Typical Clamping Performance at + 8 kV
Contact Discharge (acc. IEC 61000-4-2)
Fig. 8 - Typical Clamping Performance at - 8 kV
Contact Discharge (acc. IEC 61000-4-2)
300
200
100
0
Acc. IEC 61000-4-2 contact discharge
Positive discharge
Negative discharge
VC-ESD
- 100
- 200
- 300
0
5
10
15
20
25
30
21107
VESD (kV)
Fig. 9 - Typical Peak Clamping Voltage at ESD
Contact Discharge (acc. IEC 61000-4-2)
Rev. 1.5, 27-Apr-17
Document Number: 81200
4
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GMF05LC-HSF
Vishay Semiconductors
www.vishay.com
PACKAGE DIMENSIONS in millimeters (inches): LLP75-6L
Heat sink
0.5 (0.020)
0.6 (0.024)
0.25 (0.010)
1.65 (0.065)
1.55 (0.061)
Pin 1 marking
Foot print recommendation:
0.5 (0.020)
0.5 (0.020)
0.3 (0.012)
0.15 (0.006)
0.3 (0.012)
0.15 (0.006)
Solder resist mask
Document no.:S8-V-3906.02-010 (4)
Created - Date: 04. MAY 2005
Rev. 4 - Date: 21. March 2006
20454
Solder pad
0.5 (0.020)
Rev. 1.5, 27-Apr-17
Document Number: 81200
5
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GMF05LC-HSF
Vishay Semiconductors
www.vishay.com
LLP75-6x
S 9
F 5
Pad layout - view from top / seen at bottom side
S8-V-3906.02-004 (4)
10.01.2005
Pin 1 - location
Rev. 1.5, 27-Apr-17
Document Number: 81200
6
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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