GMF05LC-GS08 [VISHAY]

ESD Protection Diode Array in SOT-363; 采用SOT -363 ESD保护二极管阵列
GMF05LC-GS08
型号: GMF05LC-GS08
厂家: VISHAY    VISHAY
描述:

ESD Protection Diode Array in SOT-363
采用SOT -363 ESD保护二极管阵列

瞬态抑制器 二极管
文件: 总4页 (文件大小:124K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
GMF05LC  
Vishay Semiconductors  
VISHAY  
ESD Protection Diode Array in SOT-363  
6
5
4
Features  
• Transient protection for data lines as per  
IEC 61000 - 4 - 2 (ESD) 15 kV (air), 8 kV (contact)  
IEC 61000 - 4 - 5 (Lightning) 5 A (tp = 8/20 µs)  
1
2
3
18538  
• Small package for use in portable electronics  
• Bidirectional protection of 4 I/O lines  
Mechanical Data  
Case: SOT-363 Plastic package  
Molding Compound Flammability Rating:  
• Unidirectional protection of 5 I/O lines  
• Low leakage current  
• Ideal for cellular handsets, cordless phones,  
notebooks, handhelds and digital cameras  
UL 94 V-0  
Terminals: High temperature soldering guaranteed:  
260 °C/10 sec. at terminals  
Weight: 6 mg  
Parts Table  
Part  
Ordering code  
GMF05LC-GS08  
Marking  
Remarks  
Tape and Reel  
GMF05LC  
GM2  
Absolute Maximum Ratings  
Ratings at 25 °C, ambient temperature unless otherwise specified  
Parameter Test condition  
Peak pulse power 8/20 µs waveform  
Peak pulse current 8/20 µs waveform  
Symbol  
Value  
Unit  
P
70  
5
W
A
ppm  
I
pp  
Thermal Characteristics  
Ratings at 25 °C, ambient temperature unless otherwise specified  
Parameter  
Test condition  
Symbol  
Value  
Unit  
°C  
Operating temperature  
T
- 55 to + 125  
j
Storage temperature  
T
- 55 to + 150  
°C  
STG  
Electrical Characteristics  
Ratings at 25 °C, ambient temperature unless otherwise specified  
Parameter  
Test condition  
Symbol  
Min  
6
Typ.  
Max  
5
Unit  
V
Reverse stand-off voltage  
V
RWM  
Reverse breakdown voltage  
Reverse leakage current  
Clamping voltage  
I = 1 mA  
V
V
µA  
V
t
BR  
V
I
= 5 V  
I
0.1  
9.5  
RWM  
R
= 1 A, 8/20 µs waveform  
= 5 A, 8/20 µs waveform  
V
PP  
C
C
I
V
12.5  
V
PP  
Peak forward voltage  
I = 1 A, 8/20 µs waveform  
V
1.5  
V
F
F
Junction capacitance between I/ V = 0 V, f = 1 MHz  
C
50  
pF  
R
j
O pins and Gnd  
Document Number 85851  
Rev. 1.2, 02-Apr-04  
www.vishay.com  
1
GMF05LC  
Vishay Semiconductors  
VISHAY  
Typical Characteristics (Tamb = 25 °C unless otherwise specified)  
14  
10  
12  
10  
1
8
6
0.1  
4
2
0.01  
1
2
5
0
3
4
6
0.1  
1.0  
10  
100  
1000  
IPP  
- Peak Pulse Current (A)  
ggmf05lc-hs3_04  
td - Pulse Duration (µs)  
ggmf05lc-hs3_01  
Fig. 1 Non -Repetitive Peak Pulse Power vs. Pulse Time  
Fig. 4 Clamping Voltage vs. Peak Pulse Current  
100  
75  
50  
25  
0
25  
50  
75  
150  
175  
0
100  
125  
TA  
- Ambient emperature (°C)  
ggmf05lc-hs3_02  
T
Fig. 2 Pulse Derating Curve  
110  
100  
90  
Pulse Width (td)  
is defined as the point  
where the peak current  
decays to 50% of IPPM  
80  
70  
60  
50  
40  
I
=
PP  
2
td  
30  
20  
10  
0
5
10  
25  
0
15  
Time (µ  
20  
30  
t -  
s)  
ggmf05lc-hs3_03  
Fig. 3 Pulse Waveform  
www.vishay.com  
2
Document Number 85851  
Rev. 1.2, 02-Apr-04  
GMF05LC  
Vishay Semiconductors  
VISHAY  
Package Dimensions in mm  
14280  
Document Number 85851  
Rev. 1.2, 02-Apr-04  
www.vishay.com  
3
GMF05LC  
Vishay Semiconductors  
VISHAY  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and  
operatingsystems with respect to their impact on the health and safety of our employees and the public, as  
well as their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the  
use of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
www.vishay.com  
4
Document Number 85851  
Rev. 1.2, 02-Apr-04  

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