GMF05LC-HS3 [VISHAY]
5-Line ESD-Protection Diode Array in LLP75-6A; 在LLP75-6A 5线ESD保护二极管阵列
| 型号： | GMF05LC-HS3 |
| 厂家： | 
VISHAY |
| 描述： | 5-Line ESD-Protection Diode Array in LLP75-6A |
| 文件： | 总7页 (文件大小：285K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GMF05LC-HS3
Vishay Semiconductors
5-Line ESD-Protection Diode Array in LLP75-6A
Features
• Ultra compact LLP75-6A package
• 5-line ESD-protection
6
1
5
4
3
• Low leakage current I < 0.1 µA
R
• Low load capacitance of typ.
43 pF at V = 0 V
R
• ESD-immunity acc. IEC 61000-4-2
30 kV contact discharge
2
19956
30 kV air discharge
19957
• Working voltage range V
= 5 V
RWM
1
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Marking (example only)
Dot = Pin 1 marking
XX = Date code
YY = Type code (see table below)
XX
YY
21001
Ordering Information
Taped units per reel
(8 mm tape on 7" reel)
Device name
Ordering code
Minimum order quantity
15000
GMF05LC-HS3
GMF05LC-HS3-GS08
3000
Package Data
Molding
compound
flammability rating
Package
name
Type
code
Device name
Weight
5.1 mg
Moisture sensitivity level
Soldering conditions
GMF05LC-HS3
LLP75-6A
F6
UL 94 V-0
MSL level 1 (according J-STD-020) 260 °C/10 s at terminals
Absolute Maximum Ratings
Rating
Test condition
Symbol
IPPM
Value
5
Unit
A
BiAs-mode: each input (pin 1; 3 - pin 6) to ground (pin 2);
acc. IEC 61000-4-5; tp = 8/20 µs; single shot
Peak pulse current
Peak pulse power
BiAs-mode: each input (pin 1; 3 - pin 6) to ground (pin 2);
acc. IEC 61000-4-5; tp = 8/20 µs; single shot
PPP
VESD
VESD
70
30
30
W
kV
kV
contact
discharge
acc. IEC61000-4-2; 10 pulses
BiAs-mode: each input (pin 1; 3 - pin 6) to ground (pin 2)
ESD-immunity
air
discharge
TJ
Operating temperature
Storage temperature
Junction temperature
- 55 to + 125
- 55 to + 150
°C
°C
TSTG
* Please see document “Vishay Green and Halogen-Free Definitions (5-2008)” http://www.vishay.com/doc?99902
Document Number 85655
Rev. 1.7, 22-Sep-08
www.vishay.com
1
For technical support, please contact: ESD-Protection@vishay.com
GMF05LC-HS3
Vishay Semiconductors
BiAs-Mode (5-line Bidirectional Asymmetrical protection mode)
With the GMF05LC-HS3 up to 5 signal- or data-lines (L1 - L5) can be protected against voltage transients.
With pin 2 connected to ground and pin 1; 3 up tp pin 6 connected to a signal- or data-line which has to be
protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified
Maximum Reverse Working Voltage (V
) the protection diode between data line and ground offer a high
RWM
isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection
diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device
behaves like a closed switch. The Clamping Voltage (V ) is defined by the BReakthrough Voltage (V ) level
C
BR
plus the voltage drop at the series impedance (resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the for-
ward direction of the protection diode. The low Forward Voltage (V ) clamps the negative transient close to the
F
ground level.
Due to the different clamping levels in forward and reverse direction the GMF05LC-HS3 clamping behaviour
is Bidirectional and Asymmetrical (BiAs).
L1
L2
L5
L4
L3
1
2
5
4
3
3
20739
Electrical Characteristics
Ratings at 25 °C ambient temperature, unless otherwise specified
GMF05LC-HS3
BiAs mode: each input (pin 1, 3, 4, 5, 6) to ground (pin 2)
Parameter
Protection paths
Test conditions/remarks
number of line which can be protected
at IR = 1 µA
Symbol
N lines
VRWM
IR
Min.
5
Typ.
0.01
Max.
5
Unit
lines
V
Reverse stand-off voltage
Reverse current
at VR = VRWM = 5 V
0.1
8
µA
V
at IR = 1 mA
VBR
VC
Reverse breakdown voltage
6
at IPP = 1 A; acc. IEC 61000-4-5
at IPP = IPPM = 5 A; acc. IEC 61000-4-5
at IF = 1 A; acc. IEC 61000-4-5
at IPP = IPPM = 5 A; acc. IEC 61000-4-5
at VR = 0 V; f = 1 MHz
8
11.5
1.5
3.1
43
9.5
12.5
2
V
Reverse clamping voltage
Forward clamping voltage
Line capacitance
VC
V
VF
V
VF
4
V
CD
50
pF
pF
at VR = 2.5 V; f = 1 MHz
CD
25
If a higher surge current or Peak Pulse current (I ) is needed, some protection diodes in the GMF05LC-HS3
PP
can also be used in parallel in order to "multiply" the performance.
If two diodes are switched in parallel you get
•
•
•
•
•
double surge power = double peak pulse current (2 x I
half of the line inductance = reduced clamping voltage
half of the line resistance = reduced clamping voltage
)
PPM
double line Capacitance (2 x C )
D
double Reverse leakage current (2 x I )
R
www.vishay.com
Document Number 85655
Rev. 1.7, 22-Sep-08
For technical support, please contact: ESD-Protection@vishay.com
2
GMF05LC-HS3
Vishay Semiconductors
L1
L2
L3
1
2
3
6
5
4
20740
Typical Characteristics
T
= 25 °C, unless otherwise specified
amb
120 %
50
45
40
35
30
25
20
15
10
5
f = 1MHz
Rise time = 0.7 ns to 1 ns
100 %
80 %
BiAs-mode
BiSy-mode
60 %
53 %
40 %
27 %
20 %
0 %
0
0
1
2
3
4
5
6
- 10 0 10 20 30 40 50 60 70 80 90 100
20281
VR (V)
20557
Time (ns)
Figure 1. ESD Discharge Current Wave Form
Figure 3. Typical Capacitance CD vs. Reverse Voltage VR
acc. IEC 61000-4-2 (330 Ω/150 pF)
100
BiAs-mode
8 µs to 100 %
100 %
80 %
60 %
40 %
20 %
10
1
20 µs to 50 %
0.1
0.01
0.001
0 %
0
10
20
30
40
0.5
0.6
0.7
0.8
0.9
1
20548
Time (µs)
20282
VF (V)
Figure 2. 8/20 µs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
Figure 4. Typical Forward Current IF vs. Forward Voltage VF
Document Number 85655
Rev. 1.7, 22-Sep-08
www.vishay.com
3
For technical support, please contact: ESD-Protection@vishay.com
GMF05LC-HS3
Vishay Semiconductors
60
40
10
9
8
7
6
5
4
3
2
1
0
acc. IEC 61000-4-2
- 8 kV
BiSy-mode
BiAs-mode
contact discharge
20
0
- 20
- 40
- 60
- 80
- 10 0 10 20 30 40 50 60 70 80 90
0.01 0.1
1
10
100 1000 10 000
20283
21106
IR (µA)
t (ns)
Figure 5. Typical Reverse Voltage VR vs.
Reverse Current IR
Figure 8. Typical Clamping performance at - 8 kV
Contact Discharge (acc. IEC 61000-4-2)
300
16
acc. IEC 61000-4-2 contact discharge
BiSy-mode
14
200
positive discharge
12
10
100
BiAs-mode
VC-ESD
0
8
6
- 100
VC
4
negative discharge
- 200
2
Measured acc. IEC 61000-4-5 (8/20µs - wave form)
- 300
20284
0
0
5
10
15
20
25
30
0
1
2
3
4
5
6
21107
IPP (A)
VESD (kV)
Figure 6. Typical Peak Clamping Voltage VC vs.
Peak Pulse Current IPP
Figure 9. Typical Peak Clamping Voltage at ESD
Contact Discharge (acc. IEC 61000-4-2)
80
acc. IEC 61000-4-2
+ 8 kV
60
40
contact discharge
20
0
- 20
- 40
- 60
- 10 0 10 20 30 40 50 60 70 80 90
21105
t (ns)
Figure 7. Typical Clamping Performance at + 8 kV
Contact Discharge (acc. IEC 61000-4-2)
www.vishay.com
Document Number 85655
Rev. 1.7, 22-Sep-08
For technical support, please contact: ESD-Protection@vishay.com
4
GMF05LC-HS3
Vishay Semiconductors
Package Dimensions in millimeters (inches): LLP75-6A
18058
Document Number 85655
Rev. 1.7, 22-Sep-08
www.vishay.com
5
For technical support, please contact: ESD-Protection@vishay.com
GMF05LC-HS3
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively.
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA.
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or
unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages,
and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated
with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
www.vishay.com
6
Document Number 85655
Rev. 1.7, 22-Sep-08
For technical support, please contact: ESD-Protection@vishay.com
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
GMF05LC-HSF-GS08
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VISHAY
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