BPV22NF [VISHAY]
Silicon PIN Photodiode; 硅PIN光电二极管
| 型号： | BPV22NF |
| 厂家： | 
VISHAY |
| 描述： | Silicon PIN Photodiode |
| 文件： | 总6页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BPV22NF(L)
Vishay Telefunken
Silicon PIN Photodiode
Description
BPV22NF(L) is a high speed and high sensitive PIN
photodiode in a plastic package with a spherical side
view lens.
The epoxy package itself is an IR filter, spectrally
matched to GaAs on GaAs and GaAlAs on GaAlAs
IR emitters (
= 950 nm, s ( = 875 nm) > 90 %).
p
rel
Lens radius and chip position are perfectly matched to
the chip size, giving high sensitivity without compro-
mising the viewing angle.
In comparison with flat packages the spherical
lens package achieves a sensitivity improvement
of 80%.
94 8633
Features
2
Large radiant sensitive area (A=7.5 mm )
Wide viewing angle ϕ = ± 60
Improved sensitivity
Fast response times
Low junction capacitance
Plastic package with universal IR filter
Option ”L”: long lead package optional available
with suffix ”L”; e.g.: BPV23FL
Applications
Infrared remote control and free air transmission systems in combination with IR emitter diodes
(TSU.–, TSI.–, or TSH.–Series). High sensitivity detector for high data rate transmission systems.
The IR filter matches perfectly to the high speed infrared emitters in the 830 nm to 880 nm wavelength range.
Absolute Maximum Ratings
T
amb
= 25 C
Parameter
Reverse Voltage
Power Dissipation
Junction Temperature
Test Conditions
25 C
Symbol
Value
60
215
Unit
V
mW
C
V
P
R
T
amb
V
T
100
j
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
T
T
T
–55...+100
–55...+100
260
C
C
C
amb
stg
t
5 s
sd
Thermal Resistance Junction/Ambient
R
thJA
350
K/W
Document Number 81509
Rev. 3, 16-Nov-99
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1 (6)
BPV22NF(L)
Vishay Telefunken
Basic Characteristics
T
amb
= 25 C
Parameter
Forward Voltage
Test Conditions
I = 50 mA
Symbol Min
Typ
1
Max
1.3
Unit
V
V
F
F
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
Serial Resistance
Open Circuit Voltage
I = 100 A, E = 0
V
I
C
R
V
60
V
nA
pF
R
(BR)
V = 10 V, E = 0
2
70
400
370
–2.6
80
30
R
ro
V = 0 V, f = 1 MHz, E = 0
R
D
S
V = 12 V, f = 1 MHz
R
2
E = 1 mW/cm , = 950 nm
mV
mV/K
A
e
o
2
Temp. Coefficient of V
E = 1 mW/cm , = 950 nm
TK
Vo
o
e
2
Short Circuit Current
Reverse Light Current
E = 1 mW/cm , = 950 nm
I
k
e
2
E = 1 mW/cm ,
e
I
55
85
A
ra
= 870 nm, V = 5 V
R
2
Temp. Coefficient of I
E = 1 mW/cm ,
TK
Ira
0.1
%/K
ra
e
= 950 nm, V = 10 V
R
Absolute Spectral Sensitivity
V = 5 V, = 870 nm
V = 5 V, = 950 nm
R
s( )
s( )
ϕ
0.57
0.6
±60
A/W
A/W
deg
nm
nm
%
W/√ Hz
cm√Hz/
R
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Quantum Efficiency
Noise Equivalent Power
Detectivity
940
790...1050
90
p
0.5
= 950 nm
–14
V = 10 V, = 950 nm
NEP
4 x 10
6x10
R
*
12
V = 10 V, = 950 nm
R
D
W
Rise Time
V = 10 V, R = 1k
= 820 nm
,
,
,
,
t
r
100
100
4
ns
R
L
Fall Time
V = 10 V, R = 1k
t
f
ns
R
L
= 820 nm
Cut–Off Frequency
V = 12 V, R = 1k
f
c
f
c
MHz
MHz
R
L
= 870 nm
V = 12 V, R = 1k
1
R
L
= 950 nm
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Document Number 81509
Rev. 3, 16-Nov-99
BPV22NF(L)
Vishay Telefunken
Typical Characteristics (Tamb = 25 C unless otherwise specified)
1000
100
10
100
10
1
2
1mW/cm
2
0.5mW/cm
=950nm
2
0.2mW/cm
2
0.1mW/cm
2
0.05mW/cm
V =10V
R
2
0.02mW/cm
1
100
100
20
40
60
80
0.1
1
V – Reverse Voltage ( V )
R
10
94 8403
T
– Ambient Temperature ( °C )
94 8412
amb
Figure 1. Reverse Dark Current vs. Ambient Temperature
Figure 4. Reverse Light Current vs. Reverse Voltage
1.4
80
E=0
f=1MHz
V =5V
=950nm
R
1.2
1.0
0.8
0.6
60
40
20
0
100
100
0
20
40
60
80
0.1
1
10
V – Reverse Voltage ( V )
R
94 8409
T
amb
– Ambient Temperature ( °C )
94 8407
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
Figure 5. Diode Capacitance vs. Reverse Voltage
1000
100
10
1.2
1.0
0.8
0.6
0.4
0.2
0
V =5V
=950nm
R
1
0.1
10
1150
0.01
0.1
1
750
850
950
1050
2
94 8411
E – Irradiance ( mW/cm )
94 8426
– Wavelength ( nm )
e
Figure 3. Reverse Light Current vs. Irradiance
Figure 6. Relative Spectral Sensitivity vs. Wavelength
Document Number 81509
Rev. 3, 16-Nov-99
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3 (6)
BPV22NF(L)
Vishay Telefunken
0°
10
°
20
°
30°
40°
1.0
0.9
50°
60°
0.8
0.7
70°
80°
0.6
0.6
0.4
0.2
0
0.2
0.4
94 8413
Figure 7. Relative Radiant Sensitivity vs.
Angular Displacement
Dimensions BPV22NF in mm
95 11475
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Document Number 81509
Rev. 3, 16-Nov-99
BPV22NF(L)
Vishay Telefunken
Dimensions BPV22NFL in mm
9612205
Document Number 81509
Rev. 3, 16-Nov-99
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5 (6)
BPV22NF(L)
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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6 (6)
Document Number 81509
Rev. 3, 16-Nov-99
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