BPV22NF_08 [VISHAY]
Silicon PIN Photodiode, RoHS Compliant; 硅PIN光电二极管，符合RoHS
| 型号： | BPV22NF_08 |
| 厂家： | 
VISHAY |
| 描述： | Silicon PIN Photodiode, RoHS Compliant |
| 文件： | 总5页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BPV22NF, BPV22NFL
Vishay Semiconductors
Silicon PIN Photodiode, RoHS Compliant
FEATURES
• Package type: leaded
• Package form: side view
• Dimensions (in mm): 4.5 x 5 x 6
• Radiant sensitive area (in mm2): 7.5
• High radiant sensitivity
• Daylight blocking filter matched with 870 nm to
950 nm emitters
• Fast response times
94 8633
• Angle of half sensitivity: ϕ = 60ꢀ
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• High speed detector for infrared radiation
DESCRIPTION
BPV22NF is a PIN photodiode with high speed and high
radiant sensitivity in a black, plastic package with side view
lens and daylight blocking filter. Filter bandwidth is matched
with 870 nm to 950 nm IR emitters. The lens achieves 80 %
of sensitivity improvement in comparison with flat package.
BPV22NFL has long leads, other specifications like
BPV22NF.
• Infrared remote control and free air data transmission
systems, e.g. in combination with TSFFxxxx series IR
emitters
PRODUCT SUMMARY
COMPONENT
Ira (µA)
85
ϕ (deg)
60
λ0.5 (nm)
BPV22NF
790 to 1050
790 to 1050
BPV22NFL
85
60
Note
Test condition see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
BPV22NF
PACKAGING
Bulk
REMARKS
PACKAGE FORM
Side view
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 4000 pcs, 4000 pcs/bulk
BPV22NFL
Bulk
Side view, long leads
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VR
VALUE
UNIT
V
Reverse voltage
60
215
Power dissipation
Tamb ≤ 25 ꢀC
PV
mW
ꢀC
Junction temperature
Tj
100
Operating temperature range
Storage temperature range
Soldering temperature
Tamb
Tstg
- 40 to + 100
- 40 to + 100
260
ꢀC
ꢀC
t ≤ 5 s
Tsd
ꢀC
Thermal resistance junction/ambient
Note
Tamb = 25 ꢀC, unless otherwise specified
Connected with Cu wire, 0.14 mm2
RthJA
350
K/W
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354
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81509
Rev. 1.7, 08-Sep-08
BPV22NF, BPV22NFL
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
VF
MIN.
TYP.
MAX.
UNIT
V
Forward voltage
IF = 50 mA
1
1.3
Breakdown voltage
Reverse dark current
Diode capacitance
Serial resistance
I
R = 100 µA, E = 0
R = 10 V, E = 0
V(BR)
Iro
60
V
V
2
30
nA
pF
VR= 0 V, f = 1 MHz, E = 0
VR= 12 V, f = 1 MHz
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 870 nm,
R = 5 V
Ee = 1 mW/cm2, λ = 950 nm,
R = 10 V
CD
70
RS
400
370
- 2.6
80
Ω
Open circuit voltage
Temperature coefficient of Vo
Short circuit current
Vo
mV
mV/K
µA
TKVo
Ik
Reverse light current
Ira
55
85
µA
V
Temperature coefficient of Ira
TKIra
0.1
%/K
V
V
V
R = 5 V, λ = 870 nm
R = 5 V, λ = 950 nm
s(λ)
s(λ)
ϕ
0.57
A/W
A/W
deg
Absolute spectral sensitivity
0.6
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Quantum efficiency
Noise equivalent power
Detectivity
60
940
λp
nm
λ0.5
η
790 to 1050
nm
λ = 950 nm
90
%
V
R = 10 V, λ = 950 nm
R = 10 V, λ = 950 nm
NEP
D*
tr
4 x 10-14
6 x 1012
100
W/√ Hz
cm√Hz/W
ns
V
Rise time
V
V
V
V
R = 10 V, RL = 1 kΩ, λ = 820 nm
R = 10 V, RL = 1 kΩ, λ = 820 nm
R = 12 V, RL = 1 kΩ, λ = 870 nm
R = 12 V, RL = 1 kΩ, λ = 950 nm
Fall time
tf
100
ns
fc
4
MHz
MHz
Cut-off frequency
fc
1
Note
amb = 25 ꢀC, unless otherwise specified
T
BASIC CHARACTERISTICS
Tamb = 25 ꢀC, unless otherwise specified
8
1.4
1.2
1.0
VR = 5 V
λ = 950 nm
6
E = 0
f = 1 MHz
4
2
0
0.8
0.6
1
0.1
10
0
20
40
60
80
100
100
94 8430
Tamb - Ambient Temperature (ꢀC)
VR- Reverse Voltage (V)
94 8409
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Document Number: 81509
Rev. 1.7, 08-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
355
BPV22NF, BPV22NFL
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1000
100
10
V
= 5 V
λ = 950 nm
R
1
0.1
750
850
950
1050
1150
10
0.01
0.1
1
94 8426
λ - Wavelength (nm)
E
- Irradiance (mW/cm2)
94 8411
e
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
0°
10°
20°
100
30°
40°
1 mW/cm2
0.5 mW/cm2
λ = 950 nm
1.0
0.9
0.2 mW/cm2
10
50°
60°
0.1 mW/cm2
0.8
0.05 mW/cm2
70°
80°
0.7
0.02 mW/cm2
1
100
0.1
1
10
0.6 0.4 0.2
0
V
R
- Reverse Voltage (V)
94 8412
94 8413
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
80
E = 0
f = 1 MHz
60
40
20
0
0.1
1
10
100
948407
VR - Reverse Voltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
www.vishay.com
356
For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81509
Rev. 1.7, 08-Sep-08
BPV22NF, BPV22NFL
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters: BPV22NF
+ 0.1
- 0.3
5
0.2
3.2
(2.4)
0.2
4.5
R 2.25 (sphere)
Area not plane
+ 0.1
- 0.2
3.4 + 0.1
0.65
- 0.3
A
C
0.45 + 0.2
0.4 + 0.15
- 0.1
technical drawings
according to DIN
specifications
0.2
2.54 nom.
1.1
Drawing-No.: 6.544-5199.01-4
Issue: 2; 19.06.01
95 11475
PACKAGE DIMENSIONS in millimeters: BPV22NFL
+ 0.1
- 0.3
5
0.2
3.2
0.2
(2.4)
4.5
+ 0.1
- 0.3
3.4
0.75 - 0.12
Area not plane
A
C
0.1
0.1
0.63
0.4
technical drawings
according to DIN
specifications
0.2
2.54 nom.
1.1
Drawing-No.: 6.544-5236.01-4
Issue: 2; 07.07.97
96 12205
Document Number: 81509
Rev. 1.7, 08-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
357
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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