BPV23NF_06 [VISHAY]
Silicon PIN Photodiode; 硅PIN光电二极管
| 型号： | BPV23NF_06 |
| 厂家： | 
VISHAY |
| 描述： | Silicon PIN Photodiode |
| 文件： | 总7页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BPV23NF(L)
Vishay Semiconductors
Silicon PIN Photodiode
Description
BPV23NF(L) is a high speed and high sensitive PIN
photodiode in a plastic package with a spherical side
view lens.
The epoxy package itself is an IR filter, spectrally
matched to GaAs on GaAs and GaAlAs on GaAlAs IR
emitters (λ = 950 nm, s (λ = 875 nm) > 90 %).
p
rel
Lens radius and chip position are perfectly matched
to the chip size, giving high sensitivity without com-
promising the viewing angle.
94 8633
In comparison with flat packages the spherical lens
package achieves a sensitivity improvement of 80 %.
Features
Applications
2
• Large radiant sensitive area (A = 5.7 mm )
Infrared remote control and free air transmission sys-
tems in combination with IR emitter diodes (TSU.-,
TSI.-, or TSH.-Series). High sensitivity detector for
high data rate transmission systems.
• Wide viewing angle ϕ = 60ꢀ
• Improved sensitivity
e4
• Fast response times
• Low junction capacitance
• Plastic package with universal IR filter
The IR filter matches perfectly to the high speed infra-
red emitters in the 830 nm to 880 nm wavelength
range.
• Option "L": long lead package optional available
with suffix "L"; e.g.: BPV23FL
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Absolute Maximum Ratings
Tamb = 25 ꢀC, unless otherwise specified
Parameter
Reverse Voltage
Test condition
Symbol
VR
Value
60
Unit
V
Tamb ≤ 25 ꢀC
PV
Tj
Power Dissipation
215
mW
ꢀC
Junction Temperature
100
Tamb
Tstg
Tsd
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
- 55 to + 100
- 55 to + 100
260
ꢀC
ꢀC
t ≤ 5 s
ꢀC
Thermal Resistance Junction/
Ambient
RthJA
350
K/W
Document Number 81513
Rev. 1.6, 13-Nov-06
www.vishay.com
1
BPV23NF(L)
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 ꢀC, unless otherwise specified
Parameter
Test condition
IF = 50 mA
IR = 100 μA, E = 0
VR = 10 V, E = 0
R = 0 V, f = 1 MHz, E = 0
VR = 12 V, f = 1 MHz
Symbol
VF
Min
60
Typ.
1
Max
1.3
Unit
V
Forward Voltage
V(BR)
Iro
Breakdown Voltage
Reverse Dark Current
Diode capacitance
Serial Resistance
V
2
30
nA
pF
Ω
V
CD
48
RS
900
Optical Characteristics
Tamb = 25 ꢀC, unless otherwise specified
Parameter
Test condition
Symbol
Vo
Min
45
Typ.
390
Max
Unit
mV
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Open Circuit Voltage
Temp. Coefficient of Vo
TKVo
Ik
- 2.6
mV/K
Short Circuit Current
Reverse Light Current
65
65
μA
μA
Ee = 1 mW/cm2, λ = 870 nm,
Ira
VR = 5 V
Ee = 1 mW/cm2, λ = 950 nm,
Temp. Coefficient of Ira
TKIra
0.1
%/K
VR = 10 V
VR = 5 V, λ = 870 nm
Absolute Spectral Sensitivity
s(λ)
0.57
0.60
A/W
A/W
deg
V
R = 5 V, λ = 950 nm
s(λ)
ϕ
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Quantum Efficiency
60
λp
940
nm
λ0.5
η
790 to 1050
90
nm
λ = 950 nm
%
4 x 10-14
VR = 10 V, λ = 950 nm
Noise Equivalent Power
NEP
W/√ Hz
D*
tr
5 x 1012
VR = 10 V, λ = 950 nm
Detectivity
cm√Hz/W
ns
VR = 10 V, RL = 1 kΩ, λ = 820 nm
VR = 10 V, RL = 1 kΩ, λ = 820 nm
VR = 12 V, RL = 1 kΩ, λ = 870 nm
VR = 12 V, RL = 1 kΩ, λ = 950 nm
Rise Time
70
70
4
tf
fc
fc
Fall Time
ns
Cut-Off Frequency
MHz
MHz
1
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2
Document Number 81513
Rev. 1.6, 13-Nov-06
BPV23NF(L)
Vishay Semiconductors
Typical Characteristics
Tamb = 25 ꢀC unless otherwise specified
100
10
1
1000
100
10
1 mW/cm2
0.5 mW/cm2
λ = 950 nm
0.2 mW/cm2
0.1 mW/cm2
0.05 mW/cm2
VR = 10 V
0.02 mW/cm2
1
100
0.1
1
10
20
40
60
80
100
VR – Reverse Voltage (V)
94 8425
94 8403
Tamb - Ambient Temperature (ꢀC)
Figure 1. Reverse Dark Current vs. Ambient Temperature
Figure 4. Reverse Light Current vs. Reverse Voltage
80
1.4
E = 0
f = 1 MHz
VR = 5 V
λ = 950 nm
60
1.2
40
1.0
20
0
0.8
0.6
100
0
20
40
60
80
100
0.1
1
10
Tamb - Ambient Temperature (ꢀC)
V
– Reverse Voltage (V)
94 8423
94 8409
R
Figure 2. Relative Reverse Light Current vs. Ambient Temperature
Figure 5. Diode Capacitance vs. Reverse Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1000
100
10
1
V
= 5 V
R
λ = 950 nm
0.1
0.01
10
0.1
1
750
850
λ- Wavelength (nm)
Figure 6. Relative Spectral Sensitivity vs. Wavelength
950
1050
1150
E – Irradiance (mW/cm2)
94 8424
e
94 8426
Figure 3. Reverse Light Current vs. Irradiance
Document Number 81513
Rev. 1.6, 13-Nov-06
www.vishay.com
3
BPV23NF(L)
Vishay Semiconductors
0°
10°
20°
30°
40°
1.0
0.9
50°
60°
0.8
70°
80°
0.7
0.6
0.6 0.4 0.2
0
0.2
0.4
94 8413
Figure 7. Relative Radiant Sensitivity vs. Angular Displacement
Package Dimensions in mm
9612205
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4
Document Number 81513
Rev. 1.6, 13-Nov-06
BPV23NF(L)
Vishay Semiconductors
Package Dimensions in mm
95 11475
Document Number 81513
Rev. 1.6, 13-Nov-06
www.vishay.com
5
BPV23NF(L)
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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6
Document Number 81513
Rev. 1.6, 13-Nov-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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1
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