BPV23NFL [TEMIC]
PIN Photodiode, PLASTIC, 2 PIN;
| 型号： | BPV23NFL |
| 厂家： | 
TEMIC SEMICONDUCTORS |
| 描述： | PIN Photodiode, PLASTIC, 2 PIN 光电 半导体 |
| 文件： | 总5页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BPV23NFL
Silicon PIN Photodiode
Description
BPV23NFL is a high speed and high sensitive PIN photo-
diode in a plastic package with a spherical side view lens
and extra long leads.
The epoxy package itself is an IR filter, spectrally
matched to GaAs on GaAs and GaAlAs on GaAlAs IR
emitters ( = 950 nm, s ( = 875 nm) > 90 %).
p
rel
Lens radius and chip position are perfectly matched to the
chip size, giving high sensitivity without compromising
the viewing angle.
In comparison with flat packages the spherical lens pack-
age achieves a sensitivity improvement of 80%.
Features
94 8634
2
Large radiant sensitive area (A = 5.7 mm )
Wide viewing angle ϕ = ± 60
Improved sensitivity
Fast response times
Low junction capacitance
Plastic package with universal IR filter
Long leads for special design requirements
Applications
Infrared remote control and free air transmission systems in combination with IR emitter diodes (TSU.–, TSI.–, or
TSH.–Series). High sensitivity detector for high data rate transmission systems.
The IR filter matches perfectly to the high speed infrared emitters in the 830 nm to 880 nm wavelength range. This
detector is optimized for infrared locking systems in automotive applications. Recommended infrared emitters are
TSHA 5...–series.
Absolute Maximum Ratings
T
amb
= 25 C
Parameter
Test Conditions
25 C
Symbol
Value
60
Unit
V
Reverse Voltage
V
R
V
Power Dissipation
T
amb
P
215
mW
C
Junction Temperature
T
100
j
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
T
–55...+100
–55...+100
260
C
amb
T
C
stg
t
5 s
T
C
sd
R
thJA
350
K/W
TELEFUNKEN Semiconductors
1 (5)
Rev. A2, 15-Jul-96
BPV23NFL
Basic Characteristics
T
amb
= 25 C
Parameter
Test Conditions
I = 50 mA
Symbol
Min
60
Typ
1
Max
1.3
Unit
V
Forward Voltage
V
F
F
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
Serial Resistance
I = 100 A, E = 0
R
V
(BR)
V
V = 10 V, E = 0
R
I
2
30
nA
pF
ro
V = 0 V, f = 1 MHz, E = 0
R
C
D
48
V = 12 V, f = 1 MHz
R
S
900
390
–2.6
65
R
2
Open Circuit Voltage
E = 1 mW/cm , = 950 nm
V
o
mV
mV/K
A
e
2
Temp. Coefficient of V
E = 1 mW/cm , = 950 nm
TK
Vo
o
e
2
Short Circuit Current
Reverse Light Current
E = 1 mW/cm , = 950 nm
I
k
e
2
E = 1 mW/cm , = 870 nm,
I
45
65
A
e
ra
V = 5 V
R
2
Temp. Coefficient of I
E = 1 mW/cm , = 950 nm,
e
TK
Ira
0.1
%/K
ra
V = 10 V
R
V = 5 V, = 870 nm
s( )
0.57
0.60
A/W
A/W
deg
Absolute Spectral Sensitivity
R
V = 5 V, = 950 nm
R
s( )
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Quantum Efficiency
ϕ
±60
940
nm
p
790...1050
90
nm
0.5
= 950 nm
%
–14
Noise Equivalent Power
Detectivity
V =10V, =950nm
NEP
4x10
W/√ Hz
R
*
12
V =10V, =950nm
R
D
5x10
cm√Hz/
W
Rise Time
V =10V, R =1k , =820nm
t
t
70
70
4
ns
ns
R
L
r
Fall Time
V =10V, R =1k , =820nm
R L
f
V =12V, R =1k , =870nm
f
f
MHz
MHz
Cut–Off Frequency
R
L
c
c
V =12V, R =1k , =950nm
1
R
L
2 (5)
TELEFUNKEN Semiconductors
Rev. A2, 15-Jul-96
BPV23NFL
Typical Characteristics (Tamb = 25 C unless otherwise specified)
1000
100
10
100
10
1
2
1mW/cm
2
0.5mW/cm
=950nm
2
2
0.2mW/cm
0.1mW/cm
2
2
0.05mW/cm
V =10V
R
0.02mW/cm
10
1
100
100
20
40
60
80
0.1
1
94 8403
T
amb
– Ambient Temperature ( °C )
94 8425
V – Reverse Voltage ( V )
R
Figure 1. Reverse Dark Current vs. Ambient Temperature
1.4
Figure 4. Reverse Light Current vs. Reverse Voltage
80
E=0
f=1MHz
V =5V
=950nm
R
1.2
1.0
0.8
0.6
60
40
20
0
100
100
0
20
40
60
80
0.1
1
10
V – Reverse Voltage ( V )
R
94 8409
T
amb
– Ambient Temperature ( °C )
94 8423
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
Figure 5. Diode Capacitance vs. Reverse Voltage
1000
1.2
1.0
0.8
0.6
0.4
0.2
0
100
10
1
V =5V
=950nm
R
0.1
10
1150
0.01
0.1
1
750
850
950
1050
2
94 8424
E – Irradiance ( mW/cm )
94 8426
– Wavelength ( nm )
e
Figure 3. Reverse Light Current vs. Irradiance
Figure 6. Relative Spectral Sensitivity vs. Wavelength
TELEFUNKEN Semiconductors
3 (5)
Rev. A2, 15-Jul-96
BPV23NFL
0°
10
°
20
°
30°
40°
1.0
0.9
50°
60°
0.8
0.7
70°
80°
0.6
0.6
0.4
0.2
0
0.2
0.4
94 8413
Figure 7. Relative Radiant Sensitivity vs.
Angular Displacement
Dimensions in mm
9612205
4 (5)
TELEFUNKEN Semiconductors
Rev. A2, 15-Jul-96
BPV23NFL
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
TELEFUNKEN Semiconductors
5 (5)
Rev. A2, 15-Jul-96
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