BPV23L [VISHAY]
Silicon PIN Photodiode; 硅PIN光电二极管
| 型号： | BPV23L |
| 厂家： | 
VISHAY |
| 描述： | Silicon PIN Photodiode |
| 文件： | 总7页 (文件大小：169K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BPV23F(L)
Vishay Semiconductors
Silicon PIN Photodiode
Description
BPV23F(L) is a high speed and high sensitive PIN
photodiode in a plastic package with a spherical side
view lens. The epoxy package itself is an IR filter,
spectrally matched to GaAs or GaAs/GaAlAs IR emit-
ters (λ = 950 nm).
p
Lens radius and chip position are perfectly matched
to the chip size, giving high sensitivity without com-
promising the viewing angle.
94 8633
In comparison with flat packages the lens package
achieves a sensitivity improvement of 80 %.
Features
Applications
Infrared remote control and free air transmission sys-
tems in combination with IR emitter diodes (TSU...- or
TSI...-Series).
2
• Large radiant sensitive area (A = 5.7 mm )
• Wide viewing angle ϕ = ꢀ0 °
• Improved sensitivity
• Fast response times
• Low junction capacitance
• Plastic package with IR filter
• Filter designed for 950 nm transmission
• Option "L": long lead package optional available
with suffix "L"; e.g.: BPV23FL
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/9ꢀ/EC
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Reverse Voltage
Test condition
Symbol
VR
Value
ꢀ0
Unit
V
Power Dissipation
Tamb ≤ 25 °C
PV
Tj
215
100
mW
°C
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Tamb
Tstg
Tsd
- 55 to + 100
- 55 to + 100
2ꢀ0
°C
°C
t ≤ 5 s
°C
Thermal Resistance Junction/
Ambient
RthJA
350
K/W
Document Number 81510
Rev. 1.4, 08-Mar-05
www.vishay.com
1
BPV23F(L)
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
IF = 50 mA
R = 100 µA, E = 0
Symbol
VF
Min
ꢀ0
Typ.
1
Max
1.3
Unit
V
Forward Voltage
Breakdown Voltage
Reverse Dark Current
Diode capacitance
Serial Resistance
I
V(BR)
Iro
V
nA
pF
Ω
V
V
R = 10 V, E = 0
R = 0 V, f = 1 MHz, E = 0
2
30
CD
48
VR = 12 V, f = 1 MHz
RS
900
Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Vo
Min
45
Typ.
390
Max
Unit
mV
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Open Circuit Voltage
Temp. Coefficient of Vo
Short Circuit Current
Reverse Light Current
TKVo
Ik
- 2.ꢀ
ꢀ0
mV/K
µA
Ee = 1 mW/cm2, λ = 950 nm,
Ira
ꢀ3
µA
VR = 5 V
Ee = 1 mW/cm2, λ = 950 nm,
Temp. Coefficient of Ira
TKIra
0.2
%/K
VR = 10 V
Absolute Spectral Sensitivity
VR = 5 V, λ = 870 nm
s(λ)
s(λ)
0.35
0.ꢀ
A/W
A/W
V
R = 5 V, λ = 950 nm
Angle of Half Sensitivity
ϕ
ꢀ0
deg
nm
Wavelength of Peak Sensitivity
λp
950
Range of Spectral Bandwidth
λ0.5
870 to 1050
nm
Quantum Efficiency
λ = 950 nm
η
90
%
4 x 10-14
Noise Equivalent Power
VR = 10 V, λ = 950 nm
NEP
W/√ Hz
D*
tr
5 x 1012
70
Detectivity
V
V
V
V
R = 10 V, λ = 950 nm
cm√Hz/W
ns
Rise Time
R = 10 V, RL = 1 kΩ, λ = 820 nm
R = 10 V, RL = 1 kΩ, λ = 820 nm
R = 12 V, RL = 1 kΩ, λ = 870 nm
Fall Time
tf
fc
fc
70
4
ns
Cut-Off Frequency
MHz
MHz
VR = 12 V, RL = 1 kΩ, λ = 950 nm
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2
Document Number 81510
Rev. 1.4, 08-Mar-05
BPV23F(L)
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1000
100
10
100
10
1
2
1 mW/cm
2
0.5 mW/cm
λ = 950 nm
2
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
V
= 10 V
80
2
R
0.02 mW/cm
1
100
100
20
40
60
0.1
1
10
T
amb
- Ambient Temperature (°C )
V – Reverse Voltage ( V )
R
94 8403
94 8425
Figure 1. Reverse Dark Current vs. Ambient Temperature
Figure 4. Reverse Light Current vs. Reverse Voltage
1.4
80
E=0
f=1MHz
V
= 5 V
λ = 950 nm
R
1.2
1.0
60
40
0.8
0.6
20
0
0
20
40
60
80
100
100
0.1
1
10
V – Reverse Voltage ( V )
R
T
- Ambient Temperature (°C )
94 8409
94 8423
amb
Figure 2. Relative Reverse Light Current vs. Ambient Temperature
Figure 5. Diode Capacitance vs. Reverse Voltage
1000
100
1.2
1.0
0.8
0.6
0.4
10
1
V
= 5 V
R
λ = 950 nm
0.2
0
0.1
0.01
1150
750
850
950
1050
10
0.1
1
l – Wavelength ( nm )
94 8408
2
E – Irradiance ( mW/cm )
94 8424
e
Figure 3. Reverse Light Current vs. Irradiance
Figure ꢀ. Relative Spectral Sensitivity vs. Wavelength
Document Number 81510
Rev. 1.4, 08-Mar-05
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3
BPV23F(L)
Vishay Semiconductors
Figure 7. Relative Radiant Sensitivity vs. Angular Displacement
0°
10 °
20°
30°
40°
1.0
0.9
50°
60°
0.8
0.7
70°
80°
0.6
0.6 0.4 0.2
0
0.2
0.4
94 8413
Package Dimensions in mm
9612205
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4
Document Number 81510
Rev. 1.4, 08-Mar-05
BPV23F(L)
Vishay Semiconductors
Package Dimensions in mm
95 11475
Document Number 81510
Rev. 1.4, 08-Mar-05
www.vishay.com
5
BPV23F(L)
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/ꢀ90/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 ꢀ7 2831, Fax number: 49 (0)7131 ꢀ7 2423
www.vishay.com
ꢀ
Document Number 81510
Rev. 1.4, 08-Mar-05
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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