BAV21-TAP [VISHAY]
Small Signal Switching Diodes, High Voltage; 小信号开关二极管，高压
| 型号： | BAV21-TAP |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Switching Diodes, High Voltage |
| 文件： | 总5页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV17/18/19/20/21
Vishay Semiconductors
Small Signal Switching Diodes, High Voltage
Features
• Silicon Epitaxial Planar Diodes
• Lead (Pb)-free component
e2
• Component in accordance to RoHS
2002/95/EC and WEEE 2002/96/EC
Applications
• General purposes
94 9367
Mechanical Data
Case: DO35 Glass case
Weight: approx. 125 mg
Cathode Band Color: black
Packaging Codes/Options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
Parts Table
Part
Type differentiation
VRRM = 25 V
RRM = 60 V
VRRM = 120 V
Ordering code
Type Marking
BAV17
Remarks
BAV17
BAV18
BAV19
BAV20
BAV21
BAV17-TR or BAV17-TAP
BAV18-TR or BAV18-TAP
BAV19-TR or BAV19-TAP
BAV20-TR or BAV20-TAP
BAV21-TR or BAV21-TAP
Tape and Reel/Ammopack
Tape and Reel/Ammopack
Tape and Reel/Ammopack
Tape and Reel/Ammopack
Tape and Reel/Ammopack
V
BAV18
BAV19
BAV20
BAV21
V
V
RRM = 200 V
RRM = 250 V
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Part
Symbol
VRRM
Value
25
Unit
V
Peak reverse voltage
BAV17
BAV18
BAV19
BAV20
BAV21
BAV17
BAV18
BAV19
BAV20
BAV21
VRRM
VRRM
VRRM
VRRM
VR
60
V
120
200
250
20
V
V
V
Reverse voltage
V
VR
50
V
VR
100
150
200
250
1
V
VR
V
VR
V
IF
Forward continuous current
Peak forward surge current
Forward peak current
Power dissipation
mA
A
tp = 1 s, Tj = 25 °C
f = 50 Hz
IFSM
IFRM
Ptot
625
500
mA
mW
Document Number 85543
Rev. 1.7, 19-Feb-07
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1
BAV17/18/19/20/21
Vishay Semiconductors
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
l = 4 mm, TL = constant
Symbol
RthJA
Value
300
Unit
K/W
°C
Junction to ambient air
Junction temperature
Tj
175
Tstg
Storage temperature range
- 65 to + 175
°C
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
1000
100
100
100
100
100
15
Unit
mV
nA
nA
nA
nA
nA
µA
µA
µA
µA
µA
IF = 100 mA
VF
IR
IR
IR
IR
IR
IR
IR
IR
IR
IR
Forward voltage
Reverse current
VR = 20 V
BAV17
BAV18
BAV19
BAV20
BAV21
BAV17
BAV18
BAV19
BAV20
BAV21
VR = 50 V
VR = 100 V
VR = 150 V
VR = 200 V
Tj = 100 °C, VR = 20 V
Tj = 100 °C, VR = 50 V
Tj = 100 °C, VR = 100V
Tj = 100 °C, VR = 150 V
Tj = 100 °C, VR = 200 V
15
15
15
15
IR = 100 µA, tp/T = 0.01,
tp = 0.3 ms
V(BR)
Breakdown voltage
BAV17
25
V
V(BR)
V(BR)
V(BR)
V(BR)
CD
BAV18
BAV19
BAV20
BAV21
60
V
V
120
200
250
V
V
VR = 0, f = 1 MHz
IF = 10 mA
Diode capacitance
1.5
5
pF
Ω
ns
rf
Differential forward resistance
Reverse recovery time
IF = IR = 30 mA,
iR = 3 mA,
trr
50
RL = 100 Ω
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Document Number 85543
Rev. 1.7, 19-Feb-07
BAV17/18/19/20/21
Vishay Semiconductors
Typical Characteristics
T
= 25 °C unless otherwise specified
amb
1000
100
1000
100
10
1
Scattering Limit
10
Tj = 25 °C
1
VR = VRRM
0.1
0.01
200
100
0
40
80
120
160
0.1
1
10
I - Forward Current (mA)
F
T - Junction Temperature (°C)
j
94 9089
94 9084
Figure 1. Reverse Current vs. Junction Temperature
Figure 3. Differential Forward Resistance vs. Forward Current
1000
Tj = 25 °C
100
Scattering Limit
10
1
0.1
2.0
0
0.4
0.8
1.2
1.6
V
- Forward Voltage (V)
94 9085
F
Figure 2. Forward Current vs. Forward Voltage
Package Dimensions in millimeters (inches): DO35
Cathode Identification
26 min. (1.024)
3.9 max. (0.154)
26 min. (1.024)
Rev. 6 - Date: 29. January 2007
Document no.: 6.560-5004.02-4
94 9366
Document Number 85543
Rev. 1.7, 19-Feb-07
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3
BAV17/18/19/20/21
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
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4
Document Number 85543
Rev. 1.7, 19-Feb-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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