BAV21/A52R [ETC]
DIODE KLEINSIGNAL ; 二极管KLEINSIGNAL\n型号: | BAV21/A52R |
厂家: | ETC |
描述: | DIODE KLEINSIGNAL
|
文件: | 总12页 (文件大小:62K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BAV20; BAV21
General purpose diodes
1999 May 25
Product specification
Supersedes data of 1996 Sep 17
Philips Semiconductors
Product specification
General purpose diodes
BAV20; BAV21
FEATURES
DESCRIPTION
• Hermetically sealed leaded glass
SOD27 (DO-35) package
The BAV20 and BAV21 are switching diodes fabricated in planar technology,
and encapsulated in hermetically sealed leaded glass SOD27 (DO-35)
packages.
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage:
max. 150 V, 200 V
• Repetitive peak reverse voltage:
max. 200 V, 250 V
handbook, halfpage
k
a
• Repetitive peak forward current:
max. 625 mA.
MAM246
APPLICATIONS
• General purposes in industrial
equipment e.g. oscilloscopes,
digital voltmeters and video output
stages in colour television.
The diodes are type branded.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
1999 May 25
2
Philips Semiconductors
Product specification
General purpose diodes
BAV20; BAV21
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BAV20
−
−
200
V
V
BAV21
250
VR
continuous peak reverse voltage
BAV20
−
−
−
−
150
200
250
625
V
V
BAV21
IF
continuous forward current
repetitive peak forward current
see Fig.2; note 1
mA
mA
IFRM
IFSM
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 100 µs
t = 1 s
−
−
−
−
9
A
3
A
1
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
400
+175
175
mW
°C
°C
−65
−
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
1999 May 25
3
Philips Semiconductors
Product specification
General purpose diodes
BAV20; BAV21
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MIN.
MAX.
UNIT
VF
see Fig.3
IF = 100 mA
−
−
1.0
V
V
IF = 200 mA
1.25
IR
reverse current
see Fig.5
VR = VRmax
−
−
−
−
100
100
5
nA
µA
pF
ns
VR = VRmax; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
Cd
trr
diode capacitance
reverse recovery time
when switched from IF = 30 mA to
IR = 30 mA; RL = 100 Ω;
50
measured at IR = 3 mA; see Fig.8
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point lead length 10 mm
240
375
K/W
K/W
thermal resistance from junction to ambient lead length 10 mm; note 1
Note
1. Device mounted on a printed circuit-board without metallization pad.
1999 May 25
4
Philips Semiconductors
Product specification
General purpose diodes
BAV20; BAV21
GRAPHICAL DATA
MBG449
MBG459
300
600
handbook, halfpage
handbook, halfpage
I
I
F
F
(mA)
(mA)
200
400
(1)
(2)
(3)
100
200
0
0
0
o
0
100
200
1
2
T
( C)
V
(V)
amb
F
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
(3) Tj = 25 °C; maximum values.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3 Forward current as a function of forward
voltage.
MBG703
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents.
Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 25
5
Philips Semiconductors
Product specification
General purpose diodes
BAV20; BAV21
MGD009
MGD005
3
10
1.6
handbook, halfpage
handbook, halfpage
I
R
C
d
(µA)
(pF)
1.4
2
10
10
1
1.2
1.0
−1
10
−2
10
0.8
0
0
100
200
o
10
20
T ( C)
j
V
(V)
R
VR = VRmax
.
Solid line; maximum values.
Dotted line; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
MGL588
300
handbook, halfpage
V
R
(V)
(1)
200
(2)
100
0
o
0
100
200
T
( C)
amb
(1) BAV21.
(2) BAV20.
Fig.7 Maximum permissible continuous reverse
voltage as a function of ambient
temperature.
1999 May 25
6
Philips Semiconductors
Product specification
General purpose diodes
BAV20; BAV21
t
t
p
r
t
D.U.T.
I
10%
I
t
R
= 50 Ω
F
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
(1) IR = 3 mA.
Fig.8 Reverse recovery voltage test circuit and waveforms.
1999 May 25
7
Philips Semiconductors
Product specification
General purpose diodes
BAV20; BAV21
PACKAGE OUTLINE
Hermetically sealed glass package; axial leaded; 2 leads
SOD27
(1)
b
G
D
L
L
1
DIMENSIONS (mm are the original dimensions)
0
1
2 mm
G
D
L
b
1
UNIT
max.
min.
max.
max.
scale
mm
0.56
1.85
4.25
25.4
Note
1. The marking band indicates the cathode.
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
DO-35
EIAJ
97-06-09
SOD27
A24
SC-40
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 25
8
Philips Semiconductors
Product specification
General purpose diodes
BAV20; BAV21
NOTES
1999 May 25
9
Philips Semiconductors
Product specification
General purpose diodes
BAV20; BAV21
NOTES
1999 May 25
10
Philips Semiconductors
Product specification
General purpose diodes
BAV20; BAV21
NOTES
1999 May 25
11
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© Philips Electronics N.V. 1999
SCA65
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115002/03/pp12
Date of release: 1999 May 25
Document order number: 9397 750 05895
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