BAV21A0 [TSC]

High Voltage Switching Diode; 高压开关二极管
BAV21A0
型号: BAV21A0
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

High Voltage Switching Diode
高压开关二极管

二极管 开关 高压
文件: 总3页 (文件大小:208K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAV19 / BAV20 / BAV21  
High Voltage Switching Diode  
Small Signal Diode  
DO-35 Axial Lead  
HERMETICALLY SEALED GLASS  
Features  
D
—Fast switching device(Trr<4.0nS)  
—Through-hole device type mounting  
—Solder hot dip Tin(Sn) lead finish  
—Pb free version and RoHS compliant  
C
A
—All External Surfaces are Corrosion Resistant and  
Leads are Readily Solderable  
B
Unit (mm)  
Unit (inch)  
Min Max  
Dimensions  
Min  
0.45  
3.05  
Max  
0.55  
5.08  
Mechanical Data  
A
B
C
D
0.018 0.022  
0.120 0.201  
—Case : : DO-35 package (SOD-27)  
—High temperature soldering guaranteed : 260°C/10s  
—Polarity : Indicated by cathode band  
—Weight : 109 ± 4 mg  
25.40 38.10 1.000 1.500  
1.53  
2.28  
0.060 0.090  
Ordering Information  
Part No.  
BAV19 A0  
BAV20 A0  
BAV21A0  
BAV19 R0  
BAV20 R0  
BAV21 R0  
Packing  
5K / Ammo  
Package  
DO-35  
DO-35  
DO-35  
DO-35  
DO-35  
DO-35  
5K / Ammo  
5K / Ammo  
10K / 14" Reel  
10K / 14" Reel  
10K / 14" Reel  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Maximum Ratings  
Type Number  
Symbol  
Value  
Units  
Power Dissipation  
PD  
500  
mW  
Peak Forward Surge Current  
Pluse Width = 1S, Square Wave  
Pluse Width = 1uS, Square Wave  
IFSM  
1
4
A
Average Forward Current  
IO  
200  
300  
mA  
°C/W  
°C  
Thermal Resistance (Junction to Ambient)  
Junction and Storage Temperature Range  
RθJA  
TJ, TSTG  
-65 to + 200  
Version : B11  
BAV19 / BAV20 / BAV21  
High Voltage Switching Diode  
Small Signal Diode  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Electrical Characteristics  
Type Number  
Reverse Breakdown Voltage  
BAV19  
Symbol  
Min  
Max  
Units  
120  
200  
250  
-
-
-
V(BR)  
V
IR=100uA  
BAV20  
-
BAV21  
1.00  
1.25  
Forward Voltage  
IF=100mA  
IF=200mA  
VF  
V
-
Reverse Leakage Current  
BAV19  
-
-
-
VR=100V  
IR  
nA  
100  
BAV20  
VR=150V  
BAV21  
VR=200V  
CJ  
5.0  
pF  
ns  
Junction Capacitance  
Reverse Recovery Time (Note 1)  
VR=0, f=1.0MHz  
Trr  
50.0  
Notes: 1. Test Conditions: IF=IR=30mA,RL=100Ω, IRR=3mA  
Tape & Reel specification  
Item  
Symbol Dimension(mm)  
Overall width  
Tape spacing  
Component Pitch  
Untaped lead  
Bent  
A
B
64+1.69/-0.69  
52.0+/-0.69  
5.08+/-0.40  
+/-0.69  
C
L1-L2  
K
1.2 Max  
0.55(MAX)  
0.69(MAX)  
3.2Min  
Tape Mismatch  
Glass offset  
E
F
Taped lead  
G
lead beyond tape  
Reel outside diameter  
Reel inner diameter  
Feed hole width  
Reel width  
H
0
D
260+/-3  
D1  
D2  
W1  
48+/-1  
20+/-0.5  
72+3/-1  
H
G
L1  
W1  
F
B
A
D
D2  
D1  
L2  
E
C
K
Version : B11  
BAV19 / BAV20 / BAV21  
High Voltage Switching Diode  
Small Signal Diode  
Rating and Characteristic Curves  
Rverse voltage vs. reverse current  
325  
Reverse current vs. reverse voltage  
Ta=25  
C
50  
40  
30  
20  
Ta=25  
C
300  
275  
10  
0
55  
115  
Reverse voltage, V  
3
5
20  
Reverse current,  
100  
95  
135  
75  
155 175 195  
10  
30  
A
50  
Forward voltage vs. forward current  
C
Reverse current vs. reverse voltage  
100  
Ta=25  
450  
Ta=25  
C
90  
80  
400  
350  
70  
60  
50  
40  
30  
20  
300  
250  
255  
180  
220  
200  
240  
1
2
10  
Forward current,  
100  
5
20  
A
50  
Reverse voltage, V  
Forward voltage vs. forward current  
C
Forward voltage vs. forward current  
C
725  
700  
1.4  
1.3  
1.2  
Ta=25  
Ta=25  
650  
600  
1.1  
1
550  
500  
450  
0.9  
0.8  
0.7  
500 800  
0.1  
0.2  
1
10  
10  
20  
100  
200  
0.5  
2
50  
5
Forward current, mA  
Forward current, mA  
Version : B11  

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