BAV21/F2 [VISHAY]
Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-204AH, GLASS, DO-35, 2 PIN;
| 型号： | BAV21/F2 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-204AH, GLASS, DO-35, 2 PIN |
| 文件： | 总3页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV19 thru BAV21
Vishay Semiconductors
formerly General Semiconductor
Small-Signal Diodes
DO-204AH (DO-35 Glass)
Features
• Silicon Epitaxial Planar Diodes
• For general purpose
• This diode is also available in other case styles
including: the SOD-123 case with the type
designation BAV19W to BAV21W, the MiniMELF
case with the type designation BAV101 to BAV103,
the SOT-23 case with the type designation BAS19
to BAS21, and the SOD-323 case with type
designation BAV19WS to BAV21WS.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Packaging Codes/Options:
F2/10K per Ammo tape (52mm tape), 50K/box
F3/10K per 13” reel (52mm tape), 50K/box
Dimensions in inches and (millimeters)
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Continuous Reverse Voltage
BAV19
BAV20
BAV21
100
150
200
VR
V
Repetitive Peak Reverse Voltage
BAV19
BAV20
BAV21
120
200
250
VRRM
IF
V
Forward DC Current at Tamb = 25°C(1)
250
mA
mA
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at Tamb = 25°C(1)
IF(AV)
200
Repetitive Peak Forward Current
IFRM
625
mA
at f ≥ 50Hz, Θ = 180°, Tamb = 25°C(1)
Surge Forward Current at t < 1s, Tj = 25°C
Power Dissipation at Tamb = 25°C(1)
Thermal Resistance Junction to Ambient Air(1)
Junction Temperature(1)
IFSM
Ptot
RθJA
Tj
1
500
A
mW
°C/W
°C
430
175
Storage Temperature Range(1)
TS
–65 to +175
°C
Note:
(1) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
Document Number 88149
14-May-02
www.vishay.com
1
BAV19 thru BAV21
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics(TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
IF = 100mA
IF = 200mA
—
—
—
—
1.00
1.25
Forward Voltage
VF
V
BAV19
BAV19
BAV20
BAV20
BAV21
BAV21
VR = 100V
VR = 100V, Tj = 100°C
VR = 150V
VR = 150V, Tj = 100°C
VR = 200V
—
—
—
—
—
—
—
—
—
—
—
—
100
15
100
15
100
15
nA
µA
nA
µA
nA
µA
Leakage Current
IR
VR = 200V, Tj = 100°C
Dynamic Forward Resistance
Capacitance
rf
IF = 10mA
—
—
5
—
—
Ω
Ctot
VR = 0, f = 1MHz
1.5
pF
IF = 30mA, IR = 30mA
Irr = 3mA, RL = 100Ω
Reverse Recovery Time
trr
—
—
50
ns
Ratings and
Characteristic Curves(TA = 25°C unless otherwise noted)
www.vishay.com
2
Document Number 88149
14-May-02
BAV19 thru BAV21
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Ω
Document Number 88149
14-May-02
www.vishay.com
3
相关型号：
BAV21/F3
Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-204AH, GLASS, DO-35, 2 PIN
VISHAY
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