BAV17-TR [VISHAY]

Small Signal Switching Diodes, High Voltage; 小信号开关二极管,高压
BAV17-TR
型号: BAV17-TR
厂家: VISHAY    VISHAY
描述:

Small Signal Switching Diodes, High Voltage
小信号开关二极管,高压

整流二极管 小信号开关二极管 高压
文件: 总5页 (文件大小:130K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAV17 / 18 / 19 / 20 / 21  
Vishay Semiconductors  
Small Signal Switching Diodes, High Voltage  
Features  
• Silicon Epitaxial Planar Diodes  
• Lead (Pb)-free component  
e2  
• Component in accordance to RoHS  
2002/95/EC and WEEE 2002/96/EC  
Applications  
• General purposes  
94 9367  
Mechanical Data  
Case: DO35 Glass case  
Weight: approx. 125 mg  
Packaging Codes/Options:  
TR / 10 k per 13 " reel (52 mm tape), 50 k/box  
TAP / 10 k per Ammopack (52 mm tape), 50 k/box  
Parts Table  
Part  
Type differentiation  
Ordering code  
Remarks  
BAV17  
BAV18  
BAV19  
BAV20  
BAV21  
VRRM = 25 V, Single Diodes  
BAV17-TAP or BAV17-TR  
Ammopack / Tape and Reel  
Ammopack / Tape and Reel  
Ammopack / Tape and Reel  
Ammopack / Tape and Reel  
Ammopack / Tape and Reel  
V
V
RRM = 60 V, Single Diodes  
RRM = 120 V, Single Diodes  
BAV18-TAP or BAV18-TR  
BAV19-TAP or BAV19-TR  
BAV20-TAP or BAV20-TR  
BAV21-TAP or BAV21-TR  
VRRM = 200 V, Single Diodes  
RRM = 250 V, Single Diodes  
V
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Part  
Symbol  
Value  
25  
Unit  
V
Peak reverse voltage  
BAV17  
VRRM  
VRRM  
VRRM  
VRRM  
VRRM  
VR  
BAV18  
BAV19  
BAV20  
BAV21  
BAV17  
BAV18  
BAV19  
BAV20  
BAV21  
60  
120  
200  
250  
20  
V
V
V
V
Reverse voltage  
V
VR  
50  
V
VR  
100  
150  
200  
250  
1
V
VR  
V
VR  
V
Forward continuous current  
Peak forward surge current  
Forward peak current  
Power dissipation  
IF  
mA  
A
tp = 1 s, Tj = 25 °C  
f = 50 Hz  
IFSM  
IFRM  
Ptot  
625  
500  
mA  
mW  
Document Number 85543  
Rev. 1.6, 20-Apr-06  
www.vishay.com  
1
BAV17 / 18 / 19 / 20 / 21  
Vishay Semiconductors  
Thermal Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
300  
Unit  
K/W  
Junction to ambient air  
l = 4 mm, TL = constant  
Junction temperature  
Tj  
175  
°C  
°C  
Storage temperature range  
Tstg  
- 65 to + 175  
Electrical Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
IF = 100 mA  
Part  
Symbol  
Min  
Typ.  
Max  
Unit  
mV  
Forward voltage  
Reverse current  
VF  
IR  
1000  
V
V
V
V
V
R = 20 V  
BAV17  
BAV18  
BAV19  
BAV20  
BAV21  
BAV17  
BAV18  
BAV19  
BAV20  
BAV21  
BAV17  
100  
100  
100  
100  
100  
15  
nA  
nA  
nA  
nA  
nA  
μA  
μA  
μA  
μA  
μA  
V
R = 50 V  
IR  
R = 100 V  
R = 150 V  
R = 200 V  
IR  
IR  
IR  
Tj = 100 °C, VR = 20 V  
Tj = 100 °C, VR = 50 V  
Tj = 100 °C, VR = 100V  
Tj = 100 °C, VR = 150 V  
Tj = 100 °C, VR = 200 V  
IR  
IR  
15  
IR  
15  
IR  
15  
IR  
15  
Breakdown voltage  
I
R = 100 μA, tp/T = 0.01,  
V(BR)  
25  
tp = 0.3 ms  
BAV18  
BAV19  
BAV20  
BAV21  
V(BR)  
V(BR)  
V(BR)  
V(BR)  
CD  
60  
V
V
120  
200  
250  
V
V
Diode capacitance  
V
R = 0, f = 1 MHz  
1.5  
5
pF  
Ω
ns  
Differential forward resistance  
Reverse recovery time  
IF = 10 mA  
rf  
IF = IR = 30 mA,  
iR = 3 mA,  
trr  
50  
RL = 100 Ω  
www.vishay.com  
2
Document Number 85543  
Rev. 1.6, 20-Apr-06  
BAV17 / 18 / 19 / 20 / 21  
Vishay Semiconductors  
Typical Characteristics  
Tamb = 25 °C unless otherwise specified  
1000  
100  
1000  
100  
Scattering Limit  
10  
Tj = 25 °C  
1
10  
VR = VRRM  
0.1  
0.01  
1
200  
0
40  
80  
120  
160  
100  
0.1  
1
10  
T - Junction Temperature (°C)  
j
94 9084  
I
- Forward Current (mA)  
94 9089  
F
Figure 1. Reverse Current vs. Junction Temperature  
Figure 3. Differential Forward Resistance vs. Forward Current  
1000  
Tj = 25 °C  
100  
Scattering Limit  
10  
1
0.1  
2.0  
0
0.4  
0.8  
1.2  
1.6  
V
- Forward Voltage (V)  
94 9085  
F
Figure 2. Forward Current vs. Forward Voltage  
Package Dimensions in mm (Inches): DO35  
Cathode Identification  
26 min. [1.024]  
3.9 max. [0.154]  
26 min. [1.024]  
94 9366  
Document Number 85543  
Rev. 1.6, 20-Apr-06  
www.vishay.com  
3
BAV17 / 18 / 19 / 20 / 21  
Vishay Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems with respect to their impact on the health and safety of our employees and the public, as well as  
their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use  
of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
www.vishay.com  
4
Document Number 85543  
Rev. 1.6, 20-Apr-06  
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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