BAV170 [NXP]
Low-leakage double diode; 低漏电双二极管型号: | BAV170 |
厂家: | NXP |
描述: | Low-leakage double diode |
文件: | 总8页 (文件大小:57K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
BAV170
Low-leakage double diode
1999 May 11
Product specification
Supersedes data of 1996 Mar 13
Philips Semiconductors
Product specification
Low-leakage double diode
BAV170
FEATURES
PINNING
• Plastic SMD package
PIN
DESCRIPTION
• Low leakage current: typ. 3 pA
• Switching time: typ. 0.8 µs
1
2
3
anode
anode
• Continuous reverse voltage:
max. 75 V
common cathode
• Repetitive peak reverse voltage:
max. 85 V
• Repetitive peak forward current:
handbook, 4 columns
2
1
max. 500 mA.
2
1
APPLICATION
• Low-leakagecurrentapplicationsin
surface mounted circuits.
3
3
MAM108
Top view
DESCRIPTION
Marking code: JXp = made in Hong Kong; JXt = made in Malaysia.
Epitaxial, medium-speed switching,
double diode in a small SOT23 plastic
SMD package. The diodes are in
common cathode configuration.
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per diode
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
VR
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
−
−
−
85
V
75
V
IF
single diode loaded; note 1;
see Fig.2
215
mA
double diode loaded; note 1;
see Fig.2
−
−
125
500
mA
mA
IFRM
IFSM
repetitive peak forward current
non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
tp = 1 µs
tp = 1 ms
tp = 1 s
−
−
−
−
4
A
1
A
0.5
250
+150
150
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Tamb = 25 °C; note 1
mW
°C
°C
−65
−
Note
1. Device mounted on a FR4 printed-circuit board.
1999 May 11
2
Philips Semiconductors
Product specification
Low-leakage double diode
BAV170
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Per diode
VF
forward voltage
see Fig.3
IF = 1 mA
IF = 10 mA
IF = 50 mA
−
−
−
−
900
mV
1000
1100
1250
mV
mV
mV
IF = 150 mA
IR
reverse current
see Fig.5
VR = 75 V
0.003
3
5
nA
nA
pF
µs
VR = 75 V; Tj = 150 °C
f = 1 MHz; VR = 0; see Fig.6
80
−
Cd
trr
diode capacitance
2
reverse recovery time
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured at
IR = 1 mA; see Fig.7
0.8
3
THERMAL CHARACTERISTICS
SYMBOL
Rth j-tp
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
VALUE
UNIT
360
500
K/W
K/W
Rth j-a
note 1
Note
1. Device mounted on a FR4 printed-circuit board.
1999 May 11
3
Philips Semiconductors
Product specification
Low-leakage double diode
BAV170
GRAPHICAL DATA
MBG521
MLB752 - 1
300
300
handbook, halfpage
handbook, halfpage
I
F
I
F
(mA)
(mA)
200
200
(1)
(2)
(3)
(1)
100
100
(2)
0
0
0
o
0
100
200
T
( C)
0.4
0.8
1.2
1.6
amb
V
(V)
F
Device mounted on a FR4 printed-circuit board.
(1) Single diode loaded.
(1) Tj = 150 °C; typical values.
(2) Tj = 25 °C; typical values.
(2) Double diode loaded.
(3) Tj = 25 °C; maximum values.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3 Forward current as a function of forward
voltage; per diode.
MBG704
2
10
I
FSM
(A)
10
1
−1
10
2
3
4
1
10
10
10
10
t
(µs)
p
Based on square wave currents; Tj = 25 °C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration per diode.
1999 May 11
4
Philips Semiconductors
Product specification
Low-leakage double diode
BAV170
MLB754
MBG526
2
10
2
handbook, halfpage
handbook, halfpage
I
R
(nA)
(1)
10
C
d
(pF)
1
1
1
10
(2)
2
10
0
0
3
10
5
10
15
20
0
50
100
150
200
V
(V)
R
o
T
( C)
j
VR = 75 V.
(1) Maximum values.
(2) Typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of junction
temperature; per diode.
Fig.6 Diode capacitance as a function of reverse
voltage; per diode; typical values.
t
t
p
r
t
D.U.T.
I
10%
I
t
R
= 50 Ω
F
F
rr
S
SAMPLING
t
OSCILLOSCOPE
R = 50 Ω
V = V
I x R
F S
R
i
(1)
90%
V
R
MGA881
input signal
output signal
Fig.7 Reverse recovery time test circuit and waveforms.
5
1999 May 11
Philips Semiconductors
Product specification
Low-leakage double diode
BAV170
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
1999 May 11
6
Philips Semiconductors
Product specification
Low-leakage double diode
BAV170
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 11
7
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© Philips Electronics N.V. 1999
SCA64
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Printed in The Netherlands
115002/00/03/pp8
Date of release: 1999 May 11
Document order number: 9397 750 05945
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