BAV170 [KEXIN]

Low-leakage double diode; 低漏电双二极管


型号：	BAV170
厂家：	GUANGDONG KEXIN INDUSTRIAL CO.,LTD
描述：	Low-leakage double diode 低漏电双二极管二极管 PC
文件：	总2页 (文件大小：40K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SMD Type

Diodes

Low-leakage double diode

BAV170

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Plastic SMD package

Low leakage current: typ. 3 pA

Switching time: typ. 0.8

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

Continuous reverse voltage:max. 75 V

Repetitive peak reverse voltage:max. 85 V

Repetitive peak forward current:max. 500 mA.

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Repetitive peak reverse voltage

Continuous reverse voltage

Symbol

V^RRM

V^R

Conditions

Min

Max

Unit

single diode loaded

double diode loaded

215

125

500

Continuous forward current

Repetitive peak forward current

I^FRM

square wave; T^j= 25

t = 1

prior to surge

Non-repetitive peak forward current

I^FSM

t = 1 ms

t = 1 s

0.5

250

+150

150

360

500

Total power dissipation

P^tot

T^stg

Ta mb = 25

Storage temperature

-65

Junction temperature

thermal resistance from junction to tie-point

thermal resistance from junction to ambient

Rth j-t p

R^{th j-a}

K/W

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SMD Type

Diodes

BAV170

Electrical Characteristics Ta = 25

Parameter

Symbol

Conditions

Typ

Max

900

Unit

I^F= 1 mA

I^F= 10 mA

I^F= 50 mA

1000

1100

1250

Forward voltage

V^F

I^F= 150 mA

V^R= 75 V

0.003

Reverse current

I^R

C^d

t^rr

ìs

V^R= 75 V; Tj = 150

f = 1 MHz; VR = 0;

Diode capacitance

Reverse recovery time

when switched from I^F= 10 mA to IR = 10 mA;

0.8

RL = 100 ;measured at IR = 1 mA;

Marking

JXp

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