BAV170 [SECOS]
Low-leakage Double Diode; 低漏电双二极管
| 型号： | BAV170 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | Low-leakage Double Diode |
| 文件： | 总3页 (文件大小：402K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV170
Low-leakage Double Diode
Elektronische Bauelemente
Plastic-Encapsulate Diode
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
A
L
FEATURES
z
z
z
z
z
Low leakage current: typ. 3pA
Switching time: typ. 0.8µs
3
S
Top View
B
Continuous reverse voltage:max.75V
1
Repetitive peak reverse voltage:max.85V
2
V
G
Repetitive peak forward current: max. 500mA.
C
MARKING:JX, D5
H
J
D
K
SOT-23
Min
Dim
Max
A
B
C
D
G
H
J
2.800 3.040
1.200 1.400
0.890 1.110
0.370 0.500
1.780 2.040
0.013 0.100
0.085 0.177
0.450 0.600
0.890 1.020
2.100 2.500
0.450 0.600
Maximum Ratings @TA=25℃
Parameter
Repetitive Peak reverse voltage
DC Blocking Voltage
Symbol
VRRM
VR
Limits
Unit
85
V
V
75
continuous forward current
single diode loaded; note1;
double diode loaded; note1;
215
125
mA
mA
IF
K
L
repetitive peak forward current
IFRM
500
S
V
non-repetitive peak forward current
square wave; Tj=25C prior to surge;
All Dimension in mm
tp=1μs
tp=1ms
tp=1s
IFSM
4
1
0.5
A
thermal resistance from junction to tie-point
Rth j-tp
Rth j-a
360
K/W
K/W
thermal resistance from junction to ambient note1;
500
Total Power Dissipation
Ptot
TJ
250
150
mW
℃
Junction temperature
Storage temperature range
TSTG
-65 to+150
℃
Note1.Device mounted on a FR4 printed-circuit board.
Electrical Characteristics @TA=25℃
Parameter
Conditions
Symbol
VF1
VF2
VF3
VF4
IR
Min.
Typ.
Max.
0.9
1.0
1.1
1.25
5
Unit
IF=1mA
V
IF=10mA
IF=50mA
V
V
Forward voltage
IF=150mA
V
VR=75V
reverse current
nA
us
pF
IF=IR=10mA,RL=100Ω
VR=0,f=1MHz
Reverse recovery time
Diodes Capacitance
trr
3
Cd
2
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
27-Sep-2010 Rev. B
Page 1 of 3
BAV170
Low-leakage Double Diode
Plastic-Encapsulate Diode
Elektronische Bauelemente
Typical Characteristics
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
27-Sep-2010 Rev. B
Page 2 of 3
BAV170
Low-leakage Double Diode
Plastic-Encapsulate Diode
Elektronische Bauelemente
Typical Characteristics
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
27-Sep-2010 Rev. B
Page 3 of 3
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