BAS16WS-HE3-08 [VISHAY]
Rectifier Diode, 1 Element, 0.25A, 100V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2;
| 型号： | BAS16WS-HE3-08 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Element, 0.25A, 100V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2 光电二极管 |
| 文件： | 总4页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS16WS
Vishay Semiconductors
www.vishay.com
Small Signal Fast Switching Diode
FEATURES
• Silicon epitaxial planar diode
• Fast switching diode
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101
qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
ORDERING CODE
CIRCUIT CONFIGURATION
TYPE MARKING
REMARKS
BAS16WS-E3-08 or BAS16WS-E3-18
BAS16WS-HE3-08 or BAS16WS-HE3-18
BAS16WS
Single
A6
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
75
UNIT
V
Reverse voltage
VR
Repetitive peak reverse voltage
Forward current (continuous)
VRRM
IF
100
250
2
V
mA
A
t = 1 μs
t = 1 ms
t = 1 s
IFSM
IFSM
IFSM
Ptot
Non-repetitive peak forward current
Power dissipation
1
A
0.5
200
A
mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
RthJA
Tj
VALUE
650
UNIT
K/W
°C
Thermal resistance junction to ambient air
Junction temperature
150
Storage temperature range
Operating temperature range
Tstg
-65 to +150
-55 to +150
°C
Top
°C
Rev. 2.1, 12-Jul-17
Document Number: 85752
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAS16WS
Vishay Semiconductors
www.vishay.com
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
IF = 150 mA
IF = 1 mA
SYMBOL
MIN.
TYP.
MAX.
1.250
0.715
0.855
1
UNIT
V
VF
VF
VF
VF
IR
V
Forward voltage
IF = 10 mA
V
IF = 50 mA
V
V
R = 75 V
1000
30
nA
μA
μA
pF
Leakage current
V
R = 25 V, TJ = 150 °C
R = 75 V, TJ = 150 °C
IR
V
IR
50
Diode capacitance
V
R = 0, f = 1 MHz
IF = 10 mA, IR = 10 mA,
R = 1 mA, RL = 100 Ω
CD
2
Reverse recovery time
trr
6
ns
i
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
103
500
400
300
102
10
Tj = 100 °C
Tj = 25 °C
200
100
0
1
10- 1
10- 2
0
100
200
0
1
2
18185
Tamb (°C)
18105
VF (V)
Fig. 1 - Forward Characteristics
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
104
5
Tj = 25 °C
f = 1 MHz
Tj = 25 °C
f = 1 kHz
1.1
2
103
1.0
5
2
0.9
0.8
0.7
102
5
2
10
5
2
0
2
4
6
8
10
10-2
10-1
1
10
102
VR (V)
17440
17438
IF (mA)
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
Fig. 4 - Relative Capacitance vs. Reverse Voltage
Rev. 2.1, 12-Jul-17
Document Number: 85752
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAS16WS
Vishay Semiconductors
www.vishay.com
104
5
2
103
5
2
102
5
2
10
5
VR = 20 V
2
1
0
100
Tj (°C)
200
17441
Fig. 5 - Leakage Current vs. Junction Temperature
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
0.40 [0.016]
0.25 [0.010]
1.95 [0.077]
1.60 [0.063]
Cathode bar
2.85 [0.112]
2.50 [0.098]
Footprint recommendation:
0.8 [0.031]
0.8 [0.031]
1.6 [0.063]
Document no.: S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 6 - Date: 23.Sept.2016
17443
Rev. 2.1, 12-Jul-17
Document Number: 85752
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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Disclaimer
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Revision: 08-Feb-17
Document Number: 91000
1
相关型号：
BAS16WS-HE3-18
Rectifier Diode, 1 Element, 0.25A, 100V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2
VISHAY
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