BAS16WS-V-G-08 [VISHAY]
Rectifier Diode, 1 Element, 0.25A, 100V V(RRM), Silicon, GREEN PACKAGE-2;
| 型号： | BAS16WS-V-G-08 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Element, 0.25A, 100V V(RRM), Silicon, GREEN PACKAGE-2 光电二极管 |
| 文件： | 总4页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS16WS-V-G
Vishay Semiconductors
www.vishay.com
Small Signal Fast Switching Diode
FEATURES
• Silicon epitaxial planar diode
• Fast switching diode
• AEC-Q101 qualified
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
ORDERING CODE
TYPE MARKING
AK
INTERNAL CONSTRUCTION
REMARKS
BAS16WS-V-G
BAS16WS-V-G-18 or BAS16WS-V-G-08
Single diode
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
75
UNIT
V
Reverse voltage
VR
Repetitive peak reverse voltage
Forward current (continuous)
VRRM
IF
100
250
2
V
mA
A
t = 1 μs
t = 1 ms
t = 1 s
IFSM
IFSM
IFSM
Ptot
Non-repetitive peak forward current
Power dissipation
1
A
0.5
200
A
mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
RthJA
Tj
VALUE
650
UNIT
K/W
°C
Thermal resistance junction to ambient air
Junction temperature
150
Storage temperature range
Tstg
- 65 to + 150
°C
Rev. 1.0, 27-Jul-12
Document Number: 85152
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAS16WS-V-G
Vishay Semiconductors
www.vishay.com
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
715
855
1000
1250
30
UNIT
mV
mV
mV
mV
μA
IF = 1 mA
VF
VF
VF
VF
IR
IF = 10 mA
Forward voltage
IF = 50 mA
IF = 150 mA
V
R = 25 V, TJ = 150 °C
Leakage current
V
R = 75 V
R = 75 V, TJ = 150 °C
R = 0, f = 1 MHz
IF = 10 mA, IR = 10 mA,
R = 1 mA, RL = 100
IR
1
μA
V
IR
50
μA
Diode capacitance
V
CD
2
pF
Reverse recovery time
trr
6
ns
i
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
103
500
400
300
102
10
Tj = 100 °C
Tj = 25 °C
200
100
0
1
10- 1
10- 2
0
100
200
0
1
2
18185
Tamb (°C)
18105
VF (V)
Fig. 1 - Forward Characteristics
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
104
5
Tj = 25 °C
f = 1 MHz
Tj = 25 °C
f = 1 kHz
1.1
2
103
1.0
5
2
0.9
0.8
0.7
102
5
2
10
5
2
0
2
4
6
8
10
10-2
10-1
1
10
102
VR (V)
17440
17438
IF (mA)
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
Fig. 4 - Relative Capacitance vs. Reverse Voltage
Rev. 1.0, 27-Jul-12
Document Number: 85152
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAS16WS-V-G
Vishay Semiconductors
www.vishay.com
104
5
2
103
5
2
102
5
2
10
5
VR = 20 V
2
1
0
100
Tj (°C)
200
17441
Fig. 5 - Leakage Current vs. Junction Temperature
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
0.40 (0.016)
0.25 (0.010)
1.95 (0.077)
1.60 (0.063)
Cathode bar
2.85 (0.112)
2.50 (0.098)
Foot print recommendation:
0.6 (0.024)
0.6 (0.024)
Document no.:S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 5 - Date: 23.Sept.2009
17443
1.6 (0.063)
Rev. 1.0, 27-Jul-12
Document Number: 85152
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 02-Oct-12
Document Number: 91000
1
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