BAS16WS-V_12 [VISHAY]
Small Signal Fast Switching Diode; 小信号的快速开关二极管
| 型号： | BAS16WS-V_12 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Fast Switching Diode |
| 文件： | 总4页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS16WS-V
Vishay Semiconductors
Small Signal Fast Switching Diode
Features
• Silicon epitaxial planar diode
• Fast switching diode
• Also available in case SOT-23 with
designation BAS16
• AEC-Q101 qualified
20145
• Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
Mechanical Data
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes/options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part
Ordering code
Marking
A6
Remarks
BAS16WS-V
BAS16WS-V-GS18 or BAS16WS-V-GS08
Tape and Reel
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
VR
Value
75
Unit
V
Reverse voltage
VRM
IF
Peak reverse voltage
Forward current (continuous)
100
250
2
V
mA
A
IFSM
IFSM
IFSM
Ptot
t = 1 µs
t = 1 ms
t = 1 s
Non-repetitive peak forward
current
1
A
0.5
200
A
Power dissipation
mW
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
RthJA
Value
650
Unit
K/W
°C
Thermal resistance junction to ambient air
Maximum junction temperature
Storage temperature
Tj
150
Tstg
- 65 to + 150
°C
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number 85752
Rev. 1.7, 12-Aug-10
www.vishay.com
1
BAS16WS-V
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter
Test condition
Symbol
VF
Min.
Typ.
Max.
715
855
1000
1250
30
Unit
mV
mV
mV
mV
µA
IF = 1 mA
IF = 10 mA
VF
VF
VF
IR
Forward voltage
Leakage current
IF = 50 mA
IF = 150 mA
VR = 25 V, TJ = 150 °C
VR = 75 V
IR
1
µA
VR = 75 V, TJ = 150 °C
VR = 0; f = 1 MHz
IR
50
µA
CD
Diode capacitance
2
pF
IF = 10 mA to IR = 10 mA,
trr
Reverse recovery time
6
ns
IR = 1 mA, RL = 100 Ω
Typical Characteristics
T
= 25 °C, unless otherwise specified
amb
103
500
400
300
102
10
Tj = 100 °C
Tj = 25 °C
200
100
0
1
10- 1
10- 2
0
1
2
0
100
Tamb (°C)
200
18185
18105
VF (V)
Figure 1. Forward Characteristics
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
104
5
Tj = 25 °C
f = 1 kHz
Tj = 25 °C
1.1
f = 1 MHz
2
103
1.0
5
2
102
5
0.9
0.8
0.7
2
10
5
2
10-2
10-1
1
10
102
0
2
4
6
8
10
17440
17438
VR (V)
IF (mA)
Figure 2. Dynamic Forward Resistance vs. Forward Current
Figure 4. Relative Capacitance vs. Reverse Voltage
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
2
Document Number 85752
Rev. 1.7, 12-Aug-10
BAS16WS-V
Vishay Semiconductors
104
5
2
103
5
2
102
5
2
10
5
VR = 20 V
2
1
0
100
Tj (°C)
200
17441
Figure 5. Leakage Current vs. Junction Temperature
Package Dimensions in millimeters (inches): SOD-323
0.40 (0.016)
0.25 (0.010)
1.95 (0.077)
1.60 (0.063)
Cathode bar
2.85 (0.112)
2.50 (0.098)
Foot print recommendation:
0.6 (0.024)
0.6 (0.024)
Document no.:S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Rev. 5 - Date: 23.Sept.2009
17443
1.6 (0.063)
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number 85752
Rev. 1.7, 12-Aug-10
www.vishay.com
3
Legal Disclaimer Notice
www.vishay.com
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Revision: 12-Mar-12
Document Number: 91000
1
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