BAS16WT1G_12 [ONSEMI]
Silicon Switching Diode; 硅开关二极管
| 型号： | BAS16WT1G_12 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Switching Diode |
| 文件： | 总5页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS16WT1G, SBAS16WT1G
Silicon Switching Diode
Features
• AEC−Q101 Qualified and PPAP Capable
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
3
1
CATHODE
ANODE
MAXIMUM RATINGS (T = 25°C)
A
MARKING
DIAGRAM
Rating
Symbol
Value
75
Unit
V
Continuous Reverse Voltage
Recurrent Peak Forward Current
V
I
R
200
500
mA
mA
A6 MG
R
SC−70
CASE 419
STYLE 2
G
Peak Forward Surge Current
Pulse Width = 10 ms
I
FM(surge)
1
Total Power Dissipation,
One Diode Loaded T = 25°C
P
D
200
1.6
mW
A
A6
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
Derate above 25°C
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
mW/°C
(*Note: Microdot may be in either location)
Operating and Storage Junction
Temperature Range
T , T
−55 to
+150
°C
J
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
†
Device
Package
Shipping
BAS16WT1G
SC−70
(Pb−Free)
3000 / Tape & Reel
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
SBAS16WT1G
SC−70
(Pb−Free)
3000 / Tape & Reel
Thermal Resistance,
Junction−to−Ambient
One Diode Loaded
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
R
625
°C/W
q
JA
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
October, 2011− Rev. 9
BAS16WT1/D
BAS16WT1G, SBAS16WT1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
Forward Voltage
(I = 1.0 mA)
V
F
mV
−
−
−
−
715
866
1000
1250
F
(I = 10 mA)
F
(I = 50 mA)
F
(I = 150 mA)
F
Reverse Current
I
R
mA
(V = 75 V)
−
−
−
1.0
50
30
R
(V = 75 V, T = 150°C)
R
J
(V = 25 V, T = 150°C)
R
J
Capacitance
(V = 0, f = 1.0 MHz)
R
C
−
−
−
−
2.0
6.0
45
pF
ns
PC
V
D
Reverse Recovery Time
t
rr
(I = I = 10 mA, R = 50 W) (Figure 1)
F
R
L
Stored Charge
(I = 10 mA to V = 6.0 V, R = 500 W) (Figure 2)
QS
F
R
L
Forward Recovery Voltage
(I = 10 mA, t = 20 ns) (Figure 3)
V
FR
1.75
F
r
http://onsemi.com
2
BAS16WT1G, SBAS16WT1G
1 ns MAX
DUT
500 W
t
t
rr
10%
t
if
50 W
DUTY CYCLE = 2%
90%
V
F
I
rr
100 ns
Figure 1. Reverse Recovery Time Equivalent Test Circuit
OSCILLOSCOPE
R . 10 MW
C 3 7 pF
DUT
BAW62
243 pF
V
C
500 W
V
CM
20 ns MAX
D1
100 KW
t
10%
Qa
C
V
CM
+
DUTY CYCLE = 2%
t
90%
V
f
400 ns
Figure 2. Stored Charge Equivalent Test Circuit
V
120 ns
1 KW
450 W
V
90%
DUT
50 W
V
fr
t
10%
DUTY CYCLE = 2%
2 ns MAX
Figure 3. Forward Recovery Voltage Equivalent Test Circuit
http://onsemi.com
3
BAS16WT1G, SBAS16WT1G
10
100
10
T = 150°C
A
T = 125°C
A
1.0
0.1
T = 85°C
A
T = 85°C
A
T = 25°C
A
T = 55°C
1.0
0.1
A
0.01
T = -ꢀ40°C
A
T = 25°C
A
0.001
50
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
V , FORWARD VOLTAGE (VOLTS)
F
V , REVERSE VOLTAGE (VOLTS)
R
Figure 4. Forward Voltage
Figure 5. Leakage Current
0.68
0.64
0.60
0.56
0.52
0
2
4
6
8
V , REVERSE VOLTAGE (VOLTS)
R
Figure 6. Capacitance
http://onsemi.com
4
BAS16WT1G, SBAS16WT1G
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
e1
MILLIMETERS
INCHES
DIM
A
A1
A2
b
c
D
E
e
e1
L
MIN
0.80
0.00
NOM
0.90
0.05
0.70 REF
0.35
0.18
2.10
1.24
1.30
0.65 BSC
0.38
MAX
1.00
0.10
MIN
0.032
0.000
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
MAX
0.040
0.004
3
E
H
E
1
2
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
0.20
2.00
0.56
2.40
0.008
0.079
0.022
0.095
H
2.10
0.083
E
c
A
A2
0.05 (0.002)
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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BAS16WT1/D
相关型号：
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MCC
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