2N7002L [VISHAY]
Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN;
| 型号： | 2N7002L |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN 开关 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number V(BR)DSS Min (V) rDS(on) Max (W)
VGS(th) (V)
ID (A)
5 @ V = 10 V
0.8 to 3
1 to 2.5
0.2
2N7000
2N7002
VQ1000J
VQ1000P
BS170
GS
7.5 @ V = 10 V
0.115
0.225
0.225
0.5
GS
60
5.5 @ V = 10 V
0.8 to 2.5
0.8 to 2.5
0.8 to 3
GS
5.5 @ V = 10 V
GS
5 @ V = 10 V
GS
FEATURES
BENEFITS
APPLICATIONS
D Low On-Resistance: 2.5 W
D Low Threshold: 2.1 V
D Low Offset Voltage
D Direct Logic-Level Interface: TTL/CMOS
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Low Input Capacitance: 22 pF
D Fast Switching Speed: 7 ns
D Low Input and Output Leakage
D Battery Operated Systems
D Solid-State Relays
TO-226AA
(TO-92)
TO-236
(SOT-23)
1
2
3
S
G
D
G
S
1
2
3
D
Top View
Marking Code: 72wll
Top View
2N7000
72 = Part Number Code for 2N7002
w = Week Code
ll = Lot Traceability
Dual-In-Line
D
S
D
S
1
4
1
2
3
4
5
6
7
14
13
12
11
10
9
TO-92-18RM
(TO-18 Lead Form)
N
N
1
4
G
1
G
4
1
2
3
D
G
S
NC
NC
G
2
S
2
D
2
G
3
3
S
N
N
D
3
8
Top View
Top View
BS170
Plastic: VQ1000J
Sidebraze: VQ1000P
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
www.vishay.com
11-1
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Single
Total Quad
VQ1000J/P
VQ1000J VQ1000P
Parameter
Symbol
2N7000
60
2N7002
60
BS170 Unit
Drain-Source Voltage
V
60
"30
"20
0.225
0.14
1
60
60
DS
Gate-Source Voltage—Non-Repetitive
Gate-Source Voltage—Continuous
V
"40
"20
0.2
"40
"20
0.115
0.073
0.8
"25
"20
0.5
V
GSM
V
"20
0.225
0.14
1
GS
T = 25_C
A
Continuous Drain Current
I
D
(T = 150_C)
0.13
0.5
0.175
J
T = 100_C
A
A
a
Pulsed Drain Current
I
DM
T = 25_C
0.4
0.2
1.3
1.3
2
0.83
156
A
Power Dissipation
P
W
D
T = 100_C
A
0.16
312.5
0.08
625
0.52
96
0.52
96
0.8
62.5
Thermal Resistance, Junction-to-Ambient
R
thJA
_C/W
_C
Operating Junction and
Storage Temperature Range
T , T
J
–55 to 150
stg
Notes
a. Pulse width limited by maximum junction temperature.
b.
t v 50 ms.
p
SPECIFICATIONSĊ2N7000 AND 2N7002 (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
2N7000
2N7002
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Unit
Static
Drain-Source Breakdown Voltage
V
V
V
= 0 V, I = 10 mA
70
2.1
2.0
60
60
1
(BR)DSS
GS
D
= V , I = 1 mA
0.8
3
V
DS
GS D
Gate-Threshold Voltage
V
GS(th)
V
= V , I = 0.25 mA
2.5
DS
GS D
V
V
= 0 V, V = "15 V
"10
DS
DS
GS
Gate-Body Leakage
I
nA
GSS
= 0 V, V = "20 V
"100
GS
V
= 48 V, V = 0 V
GS
1
DS
DS
T
C
= 125_C
= 125_C
1000
Zero Gate Voltage Drain Current
I
mA
DSS
V
= 60 V, V = 0 V
GS
1
T
C
500
V
= 10 V, V = 4.5 V
0.35
1
0.075
DS
DS
GS
GS
b
On-State Drain Current
I
A
D(on)
V
= 7.5 V, V = 10 V
0.5
GS
V
= 4.5 V, I = 0.075 A
4.5
3.2
5.8
2.4
4.4
5.3
D
V
= 5 V, I = 0.05 A
D
7.5
13.5
7.5
GS
GS
b
T
C
= 125_C
= 125_C
Drain-Source On-Resistance
r
W
DS(on)
V
= 10 V, I = 0.5 A
D
5
9
T
J
13.5
b
Forward Transconductance
g
fs
V
V
= 10 V, I = 0.2 A
100
80
DS
DS
D
mS
b
Common Source Output Conductance
g
os
= 5 V, I = 0.05 A
0.5
D
Dynamic
Input Capacitance
C
C
22
11
2
60
25
5
50
25
5
iss
V
= 25 V, V = 0 V
GS
f = 1 MHz
DS
Output Capacitance
pF
oss
Reverse Transfer Capacitance
C
rss
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
www.vishay.com
11-2
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
SPECIFICATIONSĊ2N7000 AND 2N7002 (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
2N7000
2N7002
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Unit
Switchingd
Turn-On Time
Turn-Off Time
Turn-On Time
Turn-Off Time
t
7
7
10
10
ON
V
= 15 V, R = 25 W
L
= 10 V, R = 25 W
GEN G
DD
I
^0.5 A, V
t
D
OFF
ns
t
7
20
20
ON
V
= 30 V, R = 150 W
L
= 10 V, R = 25 W
GEN G
DD
I
D
^ 0.2 A, V
t
11
OFF
SPECIFICATIONSĊVQ1000J/P AND BS170 (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
VQ1000J/P
BS170
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V
V
= 0 V, I = 100 mA
70
60
60
(BR)DSS
GS
D
V
V
V
= V , I = 1 mA
2.1
0.8
2.5
0.8
3
GS(th)
DS
GS D
V
= 0 V, V = "10 V
"100
"500
DS
GS
T
J
= 125_C
Gate-Body Leakage
I
nA
GSS
V
= 0 V, V = "15 V
"10
DS
GS
V
= 25 V, V = 0 V
0.5
DS
GS
V
= 48 V, V = 0 V, T = 125_C
500
10
Zero Gate Voltage Drain Current
I
mA
DS
GS
J
DSS
V
= 60 V, V = 0 V
GS
DS
b
On-State Drain Current
I
V
= 10 V, V = 10 V
1
0.5
A
D(on)
DS
GS
V
= 5 V, I = 0.2 A
4
7.5
GS
D
V
= 10 V, I = 0.2 A
2.3
2.3
4.2
5
GS
GS
D
b
Drain-Source On-Resistance
r
W
DS(on)
V
= 10 V, I = 0.3 A
D
5.5
7.6
T
J
= 125_C
V
V
= 10 V, I = 0.2 A
D
100
DS
b
Forward Transconductance
g
fs
= 10 V, I = 0.5 A
D
100
mS
DS
b
Common Source Output Conductance
g
os
V
=5 V, I = 0.05 A
0.5
DS
D
Dynamic
Input Capacitance
C
C
22
11
2
60
25
5
60
iss
V
=25 V, V = 0 V
GS
f = 1 MHz
DS
Output Capacitance
pF
oss
Reverse Transfer Capacitance
C
rss
Switchingd
Turn-On Time
Turn-Off Time
Turn-On Time
Turn-Off Time
t
7
7
7
7
10
10
ON
V
= 15 V, R = 23 W
L
DD
I
I
^ 0.6 A, V
= 10 V, R = 25 W
t
D
GEN
G
OFF
ns
t
10
10
ON
V
= 25 V, R = 125 W
L
DD
^ 0.2 A, V
= 10 V, R = 25 W
D
GEN
G
t
OFF
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v80 ms duty cycle v1%.
VNBF06
c. This parameter not registered with JEDEC.
d. Switching time is essentially independent of operating temperature.
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
www.vishay.com
11-3
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Output Characteristics
Transfer Characteristics
1.0
1.0
0.8
0.6
0.4
0.2
0.0
6.5 V
6 V
VGS = 10, 9, 8, 7 V
0.8
0.6
0.4
0.2
0.0
TJ = –55_C
5.5 V
25_C
5 V
125_C
4.5 V
4 V
3.5 V
3 V
2.5 V
2, 1 V
6
0
1
2
3
4
5
0
1
2
3
4
5
6
7
8
VDS – Drain-to-Source Voltage (V)
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
7
6
5
4
3
2
1
0
60
50
40
30
20
10
0
VGS = 0 V
f = 1 MHz
rDS @ 5 V = V
GS
C
iss
rDS @ 10 V = VGS
C
oss
C
rss
0.0
0.2
0.4
0.6
0.8
1.0
0
5
10
15
20
25
30
35
ID – Drain Current (A)
VDS – Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
20
2.0
1.5
1.0
0.5
0.0
I
D
= 0.5 A
V
= 10 V, r @ 0.5 A
DS
16
12
8
GS
V
= 30 V
DS
V
= 5 V, r @ 0.05 A
DS
GS
4
0
0
400
800
1200
1600
2000
2400
–55 –30
–5
20
45
70
95
120 145
Q
g
– Total Gate Charge (pC)
T – Junction Temperature (_C)
J
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
www.vishay.com
11-4
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.000
0.100
0.010
0.001
6
5
4
3
2
1
0
ID = 50 mA
500 mA
TJ = 125_C
TJ = 25_C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
2
4
6
8
10 12 14 16 18 20
VSD – Source-to-Drain Voltage (V)
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
0.50
ID = 250 mA
0.25
–0.00
–0.25
–0.50
–0.75
–50 –25
0
25
50
75
100 125 150
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, BS170 Only)
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
0.02
P
DM
0.1
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.01
2. Per Unit Base = R
= 156_C/W
thJA
(t)
Z
3. T – T = P
JM
A
DM thJA
Single Pulse
0.01
0.1
1
10
100
1 K
10 K
t
1
– Square Wave Pulse Duration (sec)
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
www.vishay.com
11-5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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