2N7002L-AE2-R [UTC]
0.3A, 60V N-CHANNEL POWER MOSFET; 0.3A , 60V N沟道功率MOSFET![2N7002L-AE2-R](http://pdffile.icpdf.com/pdf1/p00165/img/icpdf/2N700_920162_icpdf.jpg)
型号: | 2N7002L-AE2-R |
厂家: | ![]() |
描述: | 0.3A, 60V N-CHANNEL POWER MOSFET |
文件: | 总6页 (文件大小:281K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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UNISONIC TECHNOLOGIES CO., LTD
2N7002
Power MOSFET
0.3A, 60V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 2N7002 uses advanced technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATURES
* High Density Cell Design for Low RDS(ON)
* Voltage Controlled Small Signal Switch
* Rugged and Reliable
.
* High Saturation Current Capability
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
3
Lead Free
Halogen Free
1
2
2N7002L-AE2-R
2N7002G-AE2-R
SOT-23-3
S
G
D
Tape Reel
MARKING
3P
G: Halogen Free
L: Lead Free
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 6
QW-R206-037,K
2N7002
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
VDSS
RATINGS
60
UNIT
V
Drain-Source Voltage
Drain-Gate Voltage (RGS ≤1MΩ)
VDGR
60
V
Continuous
±20
±40
300
Gate Source Voltage
VGSS
ID
V
Non Repetitive(tP<50μs)
Continuous
Pulsed
Drain Current
mA
800
Power Dissipation
200
mW
mW/°C
°C
PD
Derated Above 25°C
Junction Temperature
Storage Temperature
1.6
TJ
+ 150
-55 ~ +150
TSTG
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
625
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
215
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS VGS=0V, ID=10μA
60
V
IDSS
IGSSF
IGSSR
VDS=60V, VGS =0V
VGS =20V, VDS=0V
VGS =-20V, VDS=0V
1
μA
nA
nA
100
-100
Gate-Source Leakage Current
ON CHARACTERISTICS (Note)
Gate Threshold Voltage
VGS(TH) VGS = VDS, ID=250μA
GS = 10V, ID=300mA
VGS = 5.0V, ID=50mA
GS =10V, ID=300mA
1
2.1
0.6
2.5
3.75
1.5
V
V
V
Drain-Source On-Voltage
VDS (ON)
0.09
V
7.5
Ω
Ω
Static Drain-Source On-Resistance
RDS (ON)
VGS =5.0V, ID=50mA
7.5
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
VDS=25V,VGS=0V,f=1.0MHz
20
11
4
50
25
5
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
V
V
V
V
DD=30V, RL=150Ω, ID=200mA,
GS =10V, RGEN =25Ω
Turn-On Time
Turn-Off Time
tON
20
20
nS
nS
DD=30V, RL=25Ω, ID=200mA,
GS=10V, RGEN =25Ω
tOFF
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Pulsed Drain-Source Diode
Forward Current
VSD
VGS=0V, Is=300mA (Note)
0.88
1.5
0.8
V
A
ISM
Maximum Continuous Drain-Source
Diode Forward Current
IS
300
mA
Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-037,K
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2N7002
Power MOSFET
TEST CIRCUIT AND WAVEFORM
VDD
RL
VIN
VOUT
D
VGS
RGEN
DUT
G
S
Fig. 1
tON
tOFF
tD(ON)
tD(OFF)
tR
tF
90%
90%
Output, VOUT
10%
50%
10%
90%
Inverted
Input, VIN
10%
50%
Pulse Width
Fig. 2 Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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2N7002
Power MOSFET
TYPICAL CHARACTERISTICS
On-Resistance Varisation with Drain
On-Resistance Varisation with Temperature
Current and Temperature
3
2
VGS=10V
VGS=10V
ID=300mA
2.5
1.75
1.5
TJ=125°C
25°C
2
1.25
1
1.5
1
0.5
0
0.75
0.5
-
-
25
0
25
150
0
0.4
1.2
Drain Current,ID (A)
1.6
2
50
50
75 100 125
0.8
Junction Temperature, TJ (°C)
Gate Threshold Varisation with Temperature
Transfer Characteristics
1.1
1.0
0.8
0.6
0.4
VGS = VDS
ID = 1mA
VDS=10V
25°C
125°C
1.05
1
0.95
0.9
0.2
0
0.85
0.8
6
10
25
50
0
2
4
8
-25
0
75 100 125 150
-50
Gate to Source Voltage, VGS (V)
Junction Temperature, TJ (°C)
UNISONIC TECHNOLOGIES CO., LTD
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2N7002
Power MOSFET
TYPICAL CHARACTERICS (Cont.)
Body Diode Forward Voltage Varisation
with Temperature
Breakdown Voltage Varisation
with Temperature
2
1
1.1
VGS=0V
ID = 250μA
1.075
1.05
0.5
TJ =125°C
25°C
0.1
1.025
1
0.05
0.01
0.975
0.005
0.95
0.001
0.925
1
1.2
1.4
0.8
-50
150
125
75 100
0.2
0.4
0.6
-25
0
25
50
Body Diode Forward Voltage, VSD (V)
Junction Temperature, TJ (°C)
UNISONIC TECHNOLOGIES CO., LTD
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2N7002
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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