2N7002LT1 [MOTOROLA]
CASE 318-08, STYLE 21 SOT-23 (TO-236AB); CASE 318-08 ，风格21 SOT- 23 （ TO- 236AB ）
| 型号： | 2N7002LT1 |
| 厂家： | 
MOTOROLA |
| 描述： | CASE 318-08, STYLE 21 SOT-23 (TO-236AB) |
| 文件： | 总6页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Order this document
by 2N7002LT1/D
SEMICONDUCTOR TECHNICAL DATA
3 DRAIN
N–Channel Enhancement
Motorola Preferred Device
1
GATE
3
2 SOURCE
1
MAXIMUM RATINGS
2
Rating
Drain–Source Voltage
Drain–Gate Voltage (R
Symbol
Value
Unit
Vdc
V
DSS
60
60
CASE 318–08, STYLE 21
SOT–23 (TO–236AB)
= 1.0 MΩ)
V
DGR
Vdc
GS
Drain Current — Continuous T = 25°C
(1)
(1)
I
D
I
D
±115
± 75
±800
mAdc
C
C
Drain Current — Continuous T = 100°C
(2)
Drain Current — Pulsed
I
DM
Gate–Source Voltage
— Continuous
— Non–repetitive (t ≤ 50 µs)
V
±20
±40
Vdc
Vpk
GS
V
GSM
p
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
(3)
Total Device Dissipation FR–5 Board,
Derate above 25°C
T
A
= 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
R
556
300
°C/W
θJA
P
mW
D
(4)
Alumina Substrate,
Derate above 25°C
T = 25°C
A
2.4
417
mW/°C
°C/W
°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R
θJA
T , T
J
–55 to +150
stg
2N7002LT1 = 702
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
V
60
—
—
Vdc
(BR)DSS
(V
GS
= 0, I = 10 µAdc)
D
Zero Gate Voltage Drain Current
(V = 0, V = 60 Vdc)
T = 25°C
T = 125°C
J
I
—
—
—
—
1.0
500
µAdc
nAdc
nAdc
J
DSS
GS
Gate–Body Leakage Current, Forward
(V = 20 Vdc)
DS
I
—
—
100
GSSF
GS
Gate–Body Leakage Current, Reverse
(V = –20 Vdc)
I
—
—
–100
GSSR
GS
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola, Inc. 1997
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
(2)
ON CHARACTERISTICS
Gate Threshold Voltage
V
I
1.0
—
—
2.5
—
Vdc
mA
Vdc
GS(th)
(V
DS
= V , I = 250 µAdc)
GS
D
On–State Drain Current
(V ≥ 2.0 V , V
500
D(on)
= 10 Vdc)
Static Drain–Source On–State Voltage
DS DS(on) GS
V
DS(on)
(V
GS
(V
GS
= 10 Vdc, I = 500 mAdc)
—
—
—
—
3.75
0.375
D
= 5.0 Vdc, I = 50 mAdc)
D
Static Drain–Source On–State Resistance
r
Ohms
DS(on)
(V
GS
= 10 V, I = 500 mAdc)
T
C
T
C
T
C
T
C
= 25°C
= 125°C
= 25°C
= 125°C
—
—
—
—
—
—
—
—
7.5
13.5
7.5
D
(V
GS
= 5.0 Vdc, I = 50 mAdc)
D
13.5
Forward Transconductance
(V ≥ 2.0 V , I = 200 mAdc)
g
FS
80
—
—
mmhos
DS
DS(on) D
DYNAMIC CHARACTERISTICS
Input Capacitance
C
—
—
—
—
—
—
50
25
pF
pF
pF
iss
(V
DS
= 25 Vdc, V
= 0, f = 1.0 MHz)
GS
Output Capacitance
(V = 25 Vdc, V
C
oss
= 0, f = 1.0 MHz)
DS
GS
Reverse Transfer Capacitance
(V = 25 Vdc, V = 0, f = 1.0 MHz)
C
5.0
rss
DS
GS
(2)
SWITCHING CHARACTERISTICS
Turn–On Delay Time
t
t
—
—
—
—
30
40
ns
ns
d(on)
(V
= 25 Vdc, I
500 mAdc,
DD
D
R
= 25 Ω, R = 50 Ω)
G
L
Turn–Off Delay Time
d(off)
BODY–DRAIN DIODE RATINGS
Diode Forward On–Voltage
V
—
—
—
—
—
—
–1.5
–115
–800
Vdc
SD
(I = 11.5 mAdc, V
S
= 0 V)
GS
Source Current Continuous
(Body Diode)
I
mAdc
mAdc
S
Source Current Pulsed
I
SM
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2.0
1.8
1.6
1.4
1.2
1.0
0.8
1.0
0.8
0.6
0.4
V
= 10 V
T
= 25°C
DS
A
25°C
–55°C
V
= 10 V
9 V
GS
125°C
8 V
7 V
6 V
5 V
0.6
0.4
0.2
0
0.2
4 V
3 V
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
V
, DRAN SOURCE VOLTAGE (VOLTS)
V , GATE SOURCE VOLTAGE (VOLTS)
GS
DS
Figure 1. Ohmic Region
Figure 2. Transfer Characteristics
2.4
1.2
1.05
1.1
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
I
= V
GS
V
= 10 V
= 200 mA
DS
= 1.0 mA
GS
I
D
D
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
–60
–20
+20
+60
+100
+140
–60
–20
+20
+60
+100
+140
T, TEMPERATURE (
°C)
T, TEMPERATURE (°C)
Figure 3. Temperature versus Static
Drain–Source On–Resistance
Figure 4. Temperature versus Gate
Threshold Voltage
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23
SOT–23 POWER DISSIPATION
The power dissipation of the SOT–23 is a function of the
SOLDERING PRECAUTIONS
pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
by T
, the maximum rated junction temperature of the
, the thermal resistance from the device junction to
J(max)
die, R
θJA
ambient, and the operating temperature, T . Using the
A
values provided on the data sheet for the SOT–23 package,
P
can be calculated as follows:
D
•
•
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100°C or less.*
T
– T
A
J(max)
P
=
D
R
θJA
•
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T of 25°C, one can
A
calculate the power dissipation of the device which in this
case is 225 milliwatts.
•
•
•
The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
150°C – 25°C
556°C/W
P
=
= 225 milliwatts
D
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT–23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad . Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
•
Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
A
L
3
INCHES
MIN MAX
MILLIMETERS
S
C
B
DIM
A
B
C
D
G
H
J
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
1
2
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
V
G
K
L
S
H
J
D
V
K
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
CASE 318–08
ISSUE AF
SOT–23 (TO–236AB)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
Opportunity/Affirmative Action Employer.
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Mfax is a trademark of Motorola, Inc.
How to reach us:
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution;
P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315
Mfax : RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609
INTERNET: http://Design–NET.com
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
2N7002LT1/D
◊
相关型号：
2N7002LT1-TP
Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SOT-23, 3 PIN
MCC
2N7002LT1H
75mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
ONSEMI
2N7002LT3H
75mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
ONSEMI
©2020 ICPDF网 联系我们和版权申明