首页 |元器件品牌

2N7002LL_15 [UTC]

N-CHANNEL POWER MOSFET;
2N7002LL_15
型号： 2N7002LL_15
厂家： Unisonic Technologies    Unisonic Technologies
描述：

N-CHANNEL POWER MOSFET
文件： 总3页 (文件大小：161K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
UNISONIC TECHNOLOGIES CO., LTD  
2N7002LL  
Preliminary  
Power MOSFET  
60V, 115mA N-CHANNEL  
POWER MOSFET  
„
DESCRIPTION  
3
The UTC 2N7002LL uses advanced technology to provide  
excellent RDS(ON), low gate charge and operation with low gate  
voltages. This device is suitable for use as a load switch or in  
PWM applications.  
1
2
„
FEATURES  
SOT-23-3  
(JEDEC TO-236)  
* RDS(ON) = 7.5Ω @VGS = 10 V  
* Low Reverse Transfer Capacitance ( CRSS = typical 5 pF )  
* Fast Switching Capability  
* Avalanche Energy Specified  
* Improved dv/dt Capability, High Ruggedness  
„
SYMBOL  
3. Drain  
2.Gate  
1.Source  
„
ORDERING INFORMATION  
Ordering Number  
Pin Assignment  
Package  
Packing  
Tape Reel  
Lead Free  
Halogen Free  
2N7002LLG-AE2-R  
1
2
3
2N7002LLK-AE2-R  
SOT-23-3  
S
G
D
„
MARKING  
www.unisonic.com.tw  
Copyright © 2012 Unisonic Technologies Co., Ltd  
1 of 3  
QW-R502-284.d  
2N7002LL  
Preliminary  
Power MOSFET  
„
ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
VDSS  
RATINGS  
60  
UNIT  
Drain-Source Voltage  
V
V
V
V
Drain-Gate Voltage (RG=1.0MΩ)  
VDGR  
60  
Continuous  
VGSS  
±20  
Gate-Source Voltage  
Drain Current  
Non-repetitive (tP≦50μs)  
Continuous(TC=25°C)  
Pulse(Note 2)  
VGSM  
±40  
115  
ID  
mA  
460  
Power Dissipation (TA = 25°C)  
Derate above 25°C  
225  
mW  
mW /°C  
°C  
PD  
1.8  
Junction Temperature  
Storage Temperature  
TJ  
+150  
-55 ~ +150  
TSTG  
°C  
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.  
Absolute maximum ratings are stress ratings only and functional device operation is not implied.  
Pulse width≦300μs, Duty cycle≦2%  
2.  
„
THERMAL DATA  
PARAMETER  
SYMBOL  
RATINGS  
556  
UNIT  
°C/W  
Junction to Ambient  
θJA  
„
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Drain-Source Leakage Current  
Gate-Source Leakage Current  
ON CHARACTERISTICS(Note)  
Gate Threshold Voltage  
BVDSS  
IDSS  
VGS=0V, ID=10µA  
60  
V
VDS=60V, VGS=0V (TJ=25°C)  
VGS=±20V, VDS=0V  
1.0  
µA  
IGSS  
±100 nA  
VGS(TH)  
VDS(ON)  
VDS=VGS, ID=250 µA  
1.0  
2.5  
3.75  
0.375  
7.5  
V
V
V
GS=10V, ID=115mA  
VGS=5V, ID=50mA  
GS=10V, ID=115mA(TC=25°C)  
Drain-Source On-State Voltage  
V
Static Drain-Source On-Resistance  
RDS(ON)  
Ω
VGS=5V, ID=50mA(TC=25°C)  
7.5  
DYNAMIC PARAMETERS  
Input Capacitance  
CISS  
COSS  
CRSS  
50  
25  
pF  
pF  
pF  
Output Capacitance  
VDS=25V, VGS=0V, f=1.0MHz  
Reverse Transfer Capacitance  
SWITCHING PARAMETERS  
Turn-ON Delay Time  
5.0  
tD(ON)  
20  
40  
ns  
ns  
VDD=25V, ID=115mA,  
VGEN=10V, RG=25Ω, RL=50Ω  
Turn-OFF Delay Time  
tD(OFF)  
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS  
Diode Forward Voltage  
VSD  
IS  
IS=115mA, VGS=0V  
1.5  
115  
115  
V
Maximum Body-Diode Continuous Current  
Source Current Pulsed  
mA  
mA  
ISM  
Note: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%.  
UNISONIC TECHNOLOGIES CO., LTD  
2 of 3  
QW-R502-284.d  
www.unisonic.com.tw  
2N7002LL  
Preliminary  
Power MOSFET  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
QW-R502-284.d  
www.unisonic.com.tw  

相关型号：

2N7002LT1

 CASE 318-08, STYLE 21 SOT-23 (TO-236AB)
MOTOROLA

2N7002LT1

 N-CHANNEL ENHANCEMENT
TRSYS

2N7002LT1

 Small Signal MOSFET 115 mAmps, 60 Volts
LRC

2N7002LT1

 Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23
ONSEMI

2N7002LT1

 Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23
WILLAS

2N7002LT1

 Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SOT-23, 3 PIN
MCC

2N7002LT1-TP

 Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SOT-23, 3 PIN
MCC

2N7002LT1/D

 Small Signal MOSFET 115 mA， 60 Volts
ETC

2N7002LT1G

 Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23
ONSEMI

2N7002LT1H

 75mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
ONSEMI

2N7002LT3

 Small Signal MOSFET 115 mAmps, 60 Volts
LRC

2N7002LT3

 Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23
ONSEMI
©2020 ICPDF网 联系我们和版权申明