2N7002LT1 [WILLAS]
Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23; 小信号MOSFET 115毫安， 60伏N沟道SOT- 23
| 型号： | 2N7002LT1 |
| 厂家： | 
WILLAS ELECTRONIC CORP |
| 描述： | Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 |
| 文件： | 总4页 (文件大小：261K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
WILLAS
Small Signal MOSFET
115 mAmps, 60 Volts
N–Channel SOT–23
2N7002LT1
RoHS product for packing code suffix "G"
•
Halogen free product for packing code suffix "H"
●
Weight:0.008g
MAXIMUM RATINGS
SOT– 23 (TO–236AB)
Rating
Drain–Source Voltage
Symbol
VDSS
Value
60
Unit
Vdc
Drain–Gate Voltage (RGS = 1.0 MΩ)
VDGR
60
Vdc
115 mAMPS
60 VOLTS
R DS(on) = 7.5 W
Drain Current
ID
ID
IDM
mAdc
±115
±75
±800
– Continuous TC = 25°C (Note 1.)
– Continuous TC = 100°C (Note 1.)
– Pulsed (Note 2.)
N - Channel
3
Gate–Source Voltage
– Continuous
±20
±40
VGS
VGSM
Vdc
Vpk
– Non–repetitive (t ≤ 50 µs)
p
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
1
Total Device Dissipation FR–5 Board
(Note 3.) TA = 25°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
2
Thermal Resistance, Junction to Ambient
RθJA
PD
556
300
°C/W
MARKING DIAGRAM
& PIN ASSIGNMENT
Total Device Dissipation
mW
mW/°C
Alumina Substrate,(Note 4.) T = 25°C
A
Derate above 25°C
2.4
Drain
3
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
RθJA
417
°C/W
°C
TJ,
T
-55 to
+150
stg
702
W
1. The Power Dissipation of the package may result in a lower continuous drain
current.
1
Gate
2
Source
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
3. FR–5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
702
W
= Device Code
= Work Week
ORDERING INFORMATION
Device
Marking
Shipping
2N7002LT1
702
3000 Tape & Reel
WILLAS
2N7002LT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
V(BR)DSS
60
–
–
Vdc
(VGS = 0, ID = 10 µAdc)
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 60 Vdc)
TJ = 25°C
TJ = 125°C
IDSS
–
–
–
–
1.0
500
µAdc
nAdc
nAdc
Gate–Body Leakage Current, Forward
(VGS = 20 Vdc)
IGSSF
–
–
100
Gate–Body Leakage Current, Reverse
IGSSR
–
–
–100
(VGS = –ā20 Vdc)
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
VGS(th)
1.0
1.6
–
2
–
Vdc
mA
Vdc
On–State Drain Current
(VDS ≥ 2.0 VDS(on), VGS = 10 Vdc)
ID(on)
500
Static Drain–Source On–State Voltage
(VGS = 10 Vdc, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
VDS(on)
–
–
–
–
3.75
0.375
Static Drain–Source On–State Resistance
rDS(on)
Ohms
(VGS = 10 V, ID = 500 mAdc)
TC = 25°C
TC = 125°C
(VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C
C = 125°C
–
–
–
–
1.4
–
1.8
–
7.5
13.5
7.5
T
13.5
Forward Transconductance
gFS
80
–
–
mmhos
(VDS ≥ 2.0 VDS(on), ID = 200 mAdc)
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
Coss
Crss
–
–
–
17
10
50
25
pF
pF
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
2.5
5.0
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
td(on)
td(off)
–
–
7
20
40
ns
ns
(V DD = 25 Vdc , ID ^ 500 mAdc,
RG = 25 Ω, RL = 50 Ω, Vgen = 10 V)
Turn–Off Delay Time
11
BODY–DRAIN DIODE RATINGS
Diode Forward On–Voltage
(IS = 115 mAdc, V GS = 0 V)
VSD
–
–
–
–
–
–
–1.5
–115
–800
Vdc
Source Current Continuous
(Body Diode)
IS
mAdc
mAdc
Source Current Pulsed
ISM
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
WILLAS
2N7002LT1
TYPICAL ELECTRICAL CHARACTERISTICS
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.0
0.8
0.6
0.4
0.2
VDS = 10 V
TA = 25°C
25°C
-o55°C
VGS = 10 V
9 V
125°C
8 V
7 V
6 V
5 V
4 V
3 V
0
1.0 2.0 3.0 4.0 5.0
6.0
7.0 8.0 9.0 10
0
1.0 2.0 3.0 4.0
5.0
6.0 7.0 8.0
9.0 10
V
DS, DRAIN SOURCE VOLTAGE (VOLTS)
VGS, GATE SOURCE VOLTAGE (VOLTS)
Figure 1. Ohmic Region
Figure 2. Transfer Characteristics
2.4
1.2
1.05
1.1
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VDS = VGS
ID = 1.0 mA
VGS = 10 V
ID = 200 mA
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
+o140
-o60
-o20
+o20
+o60
+o100
-o60
-o20
+o20
+o60
+o100
+o140
T, TEMPERATURE (°C)
T, TEMPERATURE (°C)
Figure 3. Temperature versus Static
Drain–Source On–Resistance
Figure 4. Temperature versus Gate
Threshold Voltage
WILLAS
2N7002LT1
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
A
L
2. CONTROLLING DIMENSION: INCH.
3
INCHES
MAX
MILLIMETERS
DIM
S
B
MIN
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
1
2
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
V
G
C
K
L
H
J
D
K
S
V
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
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