10-F112R6A035SC01-M439E18 [VINCOTECH]
Very compact housing, easy to route;型号: | 10-F112R6A035SC01-M439E18 |
厂家: | VINCOTECH |
描述: | Very compact housing, easy to route |
文件: | 总6页 (文件大小:605K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
F112R6A035SC
target datasheet
flowPACK 1
1200V/35A
Features
flow1 housing
● Inverter, blocking diodes
● Very compact housing, easy to route
● IGBT4 technology
Target Applications
Schematic
● Power Regeneration
Types
● 10-F112R6A035SC-M439E08
● 10-F112R6A035SC01-M439E18
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Blocking Diode
VRRM
IFAV
Repetitive peak reverse voltage
DC forward current
1600
50
V
A
A
Tj=Tjmax
tp=10ms
Tj=Tjmax
Th=80°C
Tj=25°C
Th=80°C
IFSM
Surge forward current
I2t-value
700
2450
95
I2t
A2s
W
Ptot
Power dissipation per Diode
Maximum Junction Temperature
Tjmax
150
°C
Inverter Transistor
VCE
IC
Collector-emitter break down voltage
DC collector current
1200
33
V
A
Tj=Tjmax
Th=80°C
ICpulse
tp limited by Tjmax
Repetitive peak collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
105
70
A
VCE ≤ 1200V, Tj ≤ Top max
A
Ptot
Tj=Tjmax
Th=80°C
79
W
V
VGE
±20
tSC
Tj≤150°C
10
μs
VCC
VGE=15V
800
V
Tjmax
Maximum Junction Temperature
175
°C
copyright by Vincotech
1
Revision: 3
F112R6A035SC
target datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Inverter Diode
Tj=25°C
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
DC forward current
1200
18
V
A
Tj=Tjmax
Th=80°C
Th=80°C
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
30
A
38
W
°C
Tjmax
175
Thermal Properties
Tstg
Top
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
-40…+(Tjmax - 25)
Insulation Properties
Insulation voltage
Vis
t=2s
DC voltage
4000
min 12.7
min 12.7
>200
V
Creepage distance
Clearance
mm
mm
Comparative tracking index
CTI
copyright by Vincotech
2
Revision: 3
F112R6A035SC
target datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
VCE [V] or
IF [A] or
ID [A]
Tj
Min
Max
VGS [V]
VDS [V]
Blocking Diode
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1.11
1.04
0.91
0.78
4
1.7
V
VF
Vto
rt
Forward voltage
50
50
50
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
V
mΩ
5
0.05
mA
1.1
Ir
1600
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
RthJC
Thermal resistance chip to heatsink per chip
Thermal resistance chip to heatsink per chip
0.74
0.49
K/W
Inverter Transistor
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5.8
6.5
V
VGE(th) VCE=VGE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
0.0012
35
1.6
1.95
2.39
2.3
V
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
15
0
0.01
mA
1200
0
200
nA
20
none
Ω
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
92
91.6
18
Rise time
23.4
213
274
75.3
105
1.62
2.49
1.81
2.82
ns
td(off)
tf
Turn-off delay time
Rgoff=8 Ω
Rgon=8 Ω
±15
600
35
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
RthJH
RthJC
1950
155
115
270
1.2
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
±15
35
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
K/W
N/A
Inverter Diode
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1.35
1.90
1.91
2.35
V
VF
IRRM
trr
Diode forward voltage
15
15
Peak reverse recovery current
Reverse recovery time
A
ns
16.06
433.4
2.75
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
Rgon=8 Ω
±15
600
μC
di(rec)max
/dt
A/μs
mWs
109
Erec
RthJH
RthJC
1.16
2.52
Thermal grease
thickness≤50um
λ = 1 W/mK
K/W
tbd.
copyright by Vincotech
3
Revision: 3
F112R6A035SC
target datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
VCE [V] or
IF [A] or
ID [A]
Tj
Min
Max
VGS [V]
VDS [V]
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R
Tj=25°C
Tc=100°C
Tc=100°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
22000
ꢀ
ΔR/R R100=1670 ꢀ
-5
5
%
mW
mW/K
K
P
200
2
B(25/50)
Tol. ±3%
Tol. ±3%
3950
3996
B(25/100)
B-value
K
Vincotech NTC Reference
B
Module Properties
RthCH
LsCE
Rcc'1+EE'
M
Thermal resistance, case to heatsink
Module stray inductance
Chip module lead resistance, terminals -chip
Mounting torque
tbd.
5
K/W
nH
tbd.
4
mꢀ
Nm
Nm
g
3.8
6.7
4.2
7.4
Terminal connection torque
Weight
M
7
G
tbd.
copyright by Vincotech
4
Revision: 3
F112R6A035SC
target datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
Ordering Code
in DataMatrix as
M439-E08
in packaging barcode as
12mm housing
10-F112R6A035SC-M439E08
10-F112R6A035SC01-M439E18
M439-E08
M439-E18
12mm housing, without thermistor
M439-E18
Outline
Pinout
copyright by Vincotech
5
Revision: 3
F112R6A035SC
target datasheet
PRODUCT STATUS DEFINITIONS
Datasheet Status
Product Status
Definition
This datasheet contains the design specifications for
product development. Specifications may change in any
manner without notice. The data contained is exclusively
intended for technically trained staff.
Target
Formative or In Design
First Production
This datasheet contains preliminary data, and
supplementary data may be published at a later date.
Vincotech reserves the right to make changes at any time
without notice in order to improve design. The data
contained is exclusively intended for technically trained
staff.
Preliminary
This datasheet contains final specifications. Vincotech
reserves the right to make changes at any time without
notice in order to improve design. The data contained is
exclusively intended for technically trained staff.
Final
Full Production
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright by Vincotech
6
Revision: 3
相关型号:
10-FE06PPA020SJ01-LK23B58Z
5us short circuit withstand time;High speed switching;Low EMI;Short tail current
VINCOTECH
10-FE06PPA020SJ06-LV81B03Z
5us short circuit withstand time;High speed switching;Low EMI;Short tail current
VINCOTECH
10-FE12APA015SH01-PB18E08Z
Highest efficiency in hard switching and resonant topologies;Lowest switching losses;Optimized for ultra-fast switching
VINCOTECH
©2020 ICPDF网 联系我们和版权申明