10-F112R6A050SC01-M430E18 [VINCOTECH]

Very compact housing, easy to route;


型号：	10-F112R6A050SC01-M430E18
厂家：	VINCOTECH
描述：	Very compact housing, easy to route
文件：	总6页 (文件大小：615K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

F112R6A050SC

target datasheet

flowPACK 1

1200V/50A

Features

flow1 housing

● Inverter, blocking diodes

● Very compact housing, easy to route

● IGBT4 technology

Target Applications

Schematic

● Power Regeneration

Types

● 10-F112R6A050SC-M430E08

● 10-F112R6A050SC01-M430E18

Maximum Ratings

T_j=25°C, unless otherwise specified

Condition

Parameter

Symbol

Value

Unit

Blocking Diode

V_RRM

I_FAV

Repetitive peak reverse voltage

DC forward current

1600

T_j=T_jmax

t_p=10ms

T_j=T_jmax

T_h=80°C

T_j=25°C

T_h=80°C

I_FSM

Surge forward current

I2t-value

700

2450

I²t

A²s

P_tot

Power dissipation per Diode

Maximum Junction Temperature

T_jmax

150

°C

Inverter Transistor

V_CE

I_C

Collector-emitter break down voltage

DC collector current

1200

T_j=T_jmax

T_h=80°C

I_Cpulse

t_plimited by T_jmax

Repetitive peak collector current

Turn off safe operating area

Power dissipation per IGBT

Gate-emitter peak voltage

Short circuit ratings

150

100

±20

VCE ≤ 1200V, Tj ≤ Top max

P_tot

T_j=T_jmax

T_h=80°C

V_GE

t_SC

T_j≤150°C

μs

V_CC

V_GE=15V

900

T_jmax

Maximum Junction Temperature

175

°C

Revision: 3

F112R6A050SC

target datasheet

Maximum Ratings

T_j=25°C, unless otherwise specified

Condition

Parameter

Symbol

Value

Unit

Inverter Diode

T_j=25°C

V_RRM

I_F

I_FRM

P_tot

Peak Repetitive Reverse Voltage

DC forward current

1200

T_j=T_jmax

T_h=80°C

t_plimited by T_jmax

T_j=T_jmax

Repetitive peak forward current

Power dissipation per Diode

Maximum Junction Temperature

°C

T_jmax

175

Thermal Properties

T_stg

T_op

Storage temperature

-40…+125

°C

Operation temperature under switching condition

-40…+(Tjmax - 25)

Insulation Properties

Insulation voltage

V_is

t=2s

DC voltage

4000

min 12.7

>200

Creepage distance

Clearance

Comparative tracking index

CTI

Revision: 3

F112R6A050SC

target datasheet

Characteristic Values

Conditions

Value

Typ

Parameter

Symbol

Unit

V_r[V] or

V_GE[V] or

I_C[A] or

V_CE[V] or

I_F[A] or

I_D[A]

T_j

Min

Max

V_GS[V]

V_DS[V]

Blocking Diode

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

Tj=25°C

Tj=125°C

1.11

1.04

0.91

0.78

1.7

V_F

V_to

r_t

Forward voltage

Threshold voltage (for power loss calc. only)

Slope resistance (for power loss calc. only)

Reverse current

mΩ

0.05

1.1

I_r

1600

Thermal grease

thickness≤50um

λ = 1 W/mK

R_thJH

R_thJC

Thermal resistance chip to heatsink per chip

0.74

0.49

K/W

Inverter Transistor

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

5.8

6.5

V_GE(th)V_CE=V_GE

Gate emitter threshold voltage

Collector-emitter saturation voltage

Collector-emitter cut-off current incl. Diode

Gate-emitter leakage current

Integrated Gate resistor

Turn-on delay time

0.0017

1.86

2.3

V_CE(sat)

I_CES

I_GES

R_gint

t_d(on)

t_r

0.02

1200

200

Ω

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

104

100

23.8

220

295

118

2.86

4.5

2.69

4.48

Rise time

t_d(off)

t_f

Turn-off delay time

Rgoff=8 Ω

Rgon=8 Ω

±15

600

Fall time

E_on

Turn-on energy loss per pulse

Turn-off energy loss per pulse

Input capacitance

mWs

E_off

C_ies

C_oss

C_rss

Q_Gate

R_thJH

R_thJC

2770

Output capacitance

f=1MHz

Tj=25°C

205

Reverse transfer capacitance

Gate charge

160

±15

960

290

Thermal grease

thickness≤50um

λ = 1 W/mK

Thermal resistance chip to heatsink per chip

Thermal resistance chip to case per chip

0.58

0.38

K/W

Inverter Diode

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

Tj=25°C

Tj=150°C

1.35

1.90

1.91

2.35

V_F

I_RRM

t_rr

Diode forward voltage

Peak reverse recovery current

Reverse recovery time

16.06

433.4

2.75

Q_rr

Reverse recovered charge

Peak rate of fall of recovery current

Reverse recovered energy

Thermal resistance chip to heatsink per chip

Thermal resistance chip to case per chip

Rgon=8 Ω

±15

600

μC

di(rec)max

/dt

A/μs

mWs

109

Erec

R_thJH

R_thJC

1.16

2.52

Thermal grease

thickness≤50um

λ = 1 W/mK

K/W

tbd.

Revision: 3

F112R6A050SC

target datasheet

Characteristic Values

Conditions

Value

Typ

Parameter

Symbol

Unit

V_r[V] or

V_GE[V] or

I_C[A] or

V_CE[V] or

I_F[A] or

I_D[A]

T_j

Min

Max

V_GS[V]

V_DS[V]

Thermistor

Rated resistance

Deviation of R100

Power dissipation

Power dissipation constant

B-value

Tj=25°C

Tc=100°C

Tj=25°C

22000

Ω

ΔR/R R100=1486 Ω

-5

mW/K

200

B_(25/50)

Tol. ±3%

3950

3996

B_(25/100)

B-value

Vincotech NTC Reference

Module Properties

R_thCH

L_sCE

R_cc'1+EE'

Thermal resistance, case to heatsink

Module stray inductance

Chip module lead resistance, terminals -chip

Mounting torque

tbd.

K/W

tbd.

mΩ

3.8

6.7

4.2

7.4

Terminal connection torque

Weight

tbd.

Revision: 3

F112R6A050SC

target datasheet

Ordering Code and Marking - Outline - Pinout

Ordering Code & Marking

Version

Ordering Code

in DataMatrix as

M430-E08

in packaging barcode as

12mm housing

10-F112R6A050SC-M430E08

10-F112R6A050SC01-M430E18

M430-E08

M430-E18

12mm housing, without thermistor

M430-E18

Outline

Pinout

Revision: 3

F112R6A050SC

target datasheet

PRODUCT STATUS DEFINITIONS

Datasheet Status

Product Status

Definition

This datasheet contains the design specifications for

product development. Specifications may change in any

manner without notice. The data contained is exclusively

intended for technically trained staff.

Target

Formative or In Design

First Production

This datasheet contains preliminary data, and

supplementary data may be published at a later date.

Vincotech reserves the right to make changes at any time

without notice in order to improve design. The data

contained is exclusively intended for technically trained

staff.

Preliminary

This datasheet contains final specifications. Vincotech

reserves the right to make changes at any time without

notice in order to improve design. The data contained is

exclusively intended for technically trained staff.

Final

Full Production

DISCLAIMER

The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested

values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve

reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit

described herein; neither does it convey any license under its patent rights, nor the rights of others.

LIFE SUPPORT POLICY

Vincotech products are not authorised for use as critical components in life support devices or systems without the express written

approval of Vincotech.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or

sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be

reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to

cause the failure of the life support device or system, or to affect its safety or effectiveness.

Revision: 3

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