10-FE06PPA020SJ01-LK23B58Z [VINCOTECH]
5us short circuit withstand time;High speed switching;Low EMI;Short tail current;![10-FE06PPA020SJ01-LK23B58Z](http://pdffile.icpdf.com/pdf2/p00365/img/icpdf/10-FE06PPA02_2231582_icpdf.jpg)
型号: | 10-FE06PPA020SJ01-LK23B58Z |
厂家: | ![]() |
描述: | 5us short circuit withstand time;High speed switching;Low EMI;Short tail current |
文件: | 总29页 (文件大小:5391K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
10-FE06PPA020SJ01-LK23B58Z
datasheet
flowPIM 1 + PFC
600 V / 20 A
Features
flow 1 12 mm housing
● PIM with interleaved PFC circuit based on bridgeless technology
● New generation high speed IGBTs in the Inverter
● Integrated temperature sensor
Schematic
Target applications
● Embedded Drives
Types
● 10-FE06PPA020SJ01-LK23B58Z
Copyright Vincotech
1
26 Nov. 2021 / Revision 2
10-FE06PPA020SJ01-LK23B58Z
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
600
24
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
60
A
Ptot
57
W
V
VGES
Gate-emitter voltage
±20
5
tSC
Short circuit ratings
VGE = 15 V, VCC = 400 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
600
24
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
30
A
Ptot
48
W
°C
Tjmax
Maximum junction temperature
175
PFC Switch
VCES
Collector-emitter voltage
650
26
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
60
A
Ptot
55
W
V
VGES
Gate-emitter voltage
±20
175
Tjmax
Maximum junction temperature
°C
Copyright Vincotech
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26 Nov. 2021 / Revision 2
10-FE06PPA020SJ01-LK23B58Z
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
PFC Diode
VRRM
Peak repetitive reverse voltage
650
41
V
A
IF
Forward current (DC current)
Total power dissipation
Tj = Tjmax
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Ptot
66
W
°C
Tjmax
Maximum junction temperature
175
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
62
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
400
800
74
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
>12.7mm
7.81mm
≥ 600
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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10-FE06PPA020SJ01-LK23B58Z
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,00028 25
25
5
5,8
6,5
V
V
1,83
2,06
2,12
1,8(1)
VCEsat
Collector-emitter saturation voltage
15
20
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
600
0
25
0,6
µA
nA
Ω
20
25
25
100
None
700
24
Cies
Cres
pF
pF
f = 1 Mhz
0
25
Reverse transfer capacitance
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,67
K/W
25
60,32
59,2
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
59,36
30,08
31,2
tr
125
150
25
31,2
Rgon = 16 Ω
Rgoff = 16 Ω
86,88
107,36
111,84
22,21
38,32
43,74
0,414
0,55
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
350
20
tf
125
150
25
ns
QrFWD=0,559 µC
QrFWD=1,21 µC
QrFWD=1,48 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
0,588
0,229
0,369
0,403
Eoff
125
150
Copyright Vincotech
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10-FE06PPA020SJ01-LK23B58Z
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
1,25
1,76
1,66
1,61
1,95(1)
VF
IR
Forward voltage
15
125
150
V
Reverse leakage current
Thermal
Vr = 600 V
25
27
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,99
K/W
25
6,64
9,71
IRRM
Peak recovery current
125
150
25
A
10,67
198,64
271,14
309,91
0,559
1,21
trr
Reverse recovery time
125
150
25
ns
di/dt=537 A/µs
di/dt=702 A/µs
di/dt=573 A/µs
Qr
Recovered charge
±15
350
20
125
150
25
μC
1,48
0,138
0,303
0,378
30,78
67,04
68,48
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
PFC Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0002
20
25
3,3
4
4,7
V
V
25
1,61
1,76
1,79
2,22(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
40
µA
nA
Ω
20
120
None
1200
5,2
Cies
Cres
pF
pF
f = 1 Mhz
0
25
25
Reverse transfer capacitance
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,73
K/W
25
21,12
20,16
20,16
8,64
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
9,6
9,92
Rgon = 16 Ω
Rgoff = 16 Ω
104,96
120,96
125,44
6,94
td(off)
Turn-off delay time
Fall time
125
150
25
ns
0/15
400
20
tf
125
150
25
9,49
ns
10,66
0,334
0,537
0,6
QrFWD=0,412 µC
QrFWD=1,16 µC
QrFWD=1,45 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
0,134
0,219
0,242
Eoff
125
150
Copyright Vincotech
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10-FE06PPA020SJ01-LK23B58Z
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
PFC Diode
Static
25
1,36
0,917
0,837
1,8(1)
VF
IR
Forward voltage
5
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
5
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,44
K/W
25
17,46
33,85
40,08
52,85
72,29
78,4
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
0,412
1,16
di/dt=2226 A/µs
di/dt=1935 A/µs
di/dt=1868 A/µs
Qr
Recovered charge
0/15
400
20
125
150
25
μC
1,45
0,082
0,248
0,319
1657
1182
1421
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
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10-FE06PPA020SJ01-LK23B58Z
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Rectifier Diode
Static
25
0,875
0,764
0,748
1,1(1)
VF
IR
Forward voltage
5
125
150
25
V
100
Reverse leakage current
Thermal
Vr = 1600 V
µA
150
2000
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,94
K/W
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1486 Ω
100
-12
14
200
2
mW
mW/K
K
d
25
B(25/50)
Tol. ±3 %
Tol. ±3 %
3950
3998
B(25/100)
B-value
K
Vincotech Thermistor Reference
B
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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26 Nov. 2021 / Revision 2
10-FE06PPA020SJ01-LK23B58Z
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
60
60
VGE
:
7 V
8 V
50
40
30
20
10
50
40
30
20
10
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0
0
0
1
2
3
4
5
6
1
2
3
4
5
6
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
20
10
0
15
10
5
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
15
μs
V
D =
tp / T
1,667
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
8,37E-02
1,98E-01
7,72E-01
4,11E-01
2,02E-01
1,97E+00
2,51E-01
5,06E-02
7,66E-03
6,07E-04
Copyright Vincotech
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10-FE06PPA020SJ01-LK23B58Z
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
100
10µs
10
1
100µs
1ms
10ms
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
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datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,985
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
8,91E-02
2,69E-01
8,60E-01
5,20E-01
2,47E-01
2,42E+00
2,03E-01
4,06E-02
6,04E-03
9,13E-04
Copyright Vincotech
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10-FE06PPA020SJ01-LK23B58Z
datasheet
PFC Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
60
60
VGE
:
7 V
8 V
50
40
30
20
10
0
50
40
30
20
10
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
20
10
0
15
10
5
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
1
2
3
4
5
6
7
8
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
V
D =
tp / T
1,732
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,16E-01
4,05E-01
6,61E-01
3,73E-01
1,76E-01
1,03E+00
1,11E-01
2,97E-02
4,53E-03
3,79E-04
Copyright Vincotech
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10-FE06PPA020SJ01-LK23B58Z
datasheet
PFC Switch Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
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datasheet
PFC Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,437
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
1,12E-01
3,84E-01
5,77E-01
2,49E-01
1,15E-01
1,29E+00
1,31E-01
3,59E-02
4,89E-03
7,76E-04
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datasheet
Rectifier Diode Characteristics
figure 15.
Rectifier
figure 16.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
100
75
50
25
0
10
-1
10
-2
10
0,5
0,2
-3
10
0,1
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
VF(V)
10
10
10
10
tp(s)
tp
=
250
D =
tp / T
0,943
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
Rectifier thermal model values
R (K/W)
τ (s)
4,37E-02
1,29E-01
4,96E-01
1,86E-01
8,87E-02
4,99E+00
6,40E-01
7,40E-02
1,52E-02
1,71E-03
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datasheet
Thermistor Characteristics
figure 17.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
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datasheet
Inverter Switching Characteristics
figure 18.
IGBT
figure 19.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
5
10
15
20
25
30
35
40
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
Ω
125 °C
150 °C
350
±15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
16
figure 20.
FWD
figure 21.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
0,5
0,4
0,3
0,2
0,1
0,0
0,5
0,4
0,3
0,2
0,1
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
35
40
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
150 °C
350
±15
20
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
17
26 Nov. 2021 / Revision 2
10-FE06PPA020SJ01-LK23B58Z
datasheet
Inverter Switching Characteristics
figure 22.
IGBT
figure 23.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
-1
10
-1
10
td(off)
td(on)
tr
tf
tr
tf
-2
10
-2
10
0
5
10
15
20
25
30
35
40
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
±15
16
°C
V
150
350
±15
20
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
16
figure 24.
FWD
figure 25.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,45
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,45
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
trr
trr
0
5
10
15
20
25
30
35
40
IC(A)
0
10
20
30
40
50
60
70
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
150 °C
350
±15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
18
26 Nov. 2021 / Revision 2
10-FE06PPA020SJ01-LK23B58Z
datasheet
Inverter Switching Characteristics
figure 26.
FWD
figure 27.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
2,25
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
150 °C
350
±15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 28.
FWD
figure 29.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
12,5
10,0
7,5
15,0
12,5
10,0
7,5
IRM
IRM
IRM
IRM
IRM
5,0
5,0
IRM
2,5
2,5
0,0
0,0
0
5
10
15
20
25
30
35
40
IC(A)
0
10
20
30
40
50
60
70
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
150 °C
350
±15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
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26 Nov. 2021 / Revision 2
10-FE06PPA020SJ01-LK23B58Z
datasheet
Inverter Switching Characteristics
figure 30.
FWD
figure 31.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
700
1500
1250
1000
750
500
250
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
600
500
400
300
200
100
0
0
5
10
15
20
25
30
35
40
IC(A)
0
10
20
30
40
50
60
70
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
150 °C
350
±15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 32.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
45
IC MAX
40
35
30
25
20
15
10
5
0
0
100
200
300
400
500
600
700
V
CE(V)
Tj =
At
150
16
°C
Ω
Rgon
Rgoff
=
=
16
Ω
Copyright Vincotech
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26 Nov. 2021 / Revision 2
10-FE06PPA020SJ01-LK23B58Z
datasheet
PFC Switching Characteristics
figure 33.
IGBT
figure 34.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
1,0
0,8
0,6
0,4
0,2
0,0
1,25
1,00
0,75
0,50
0,25
0,00
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
5
10
15
20
25
30
35
40
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
Ω
125 °C
150 °C
400
0/15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
16
figure 35.
FWD
figure 36.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,5
0,4
0,3
0,2
0,1
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
20
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
21
26 Nov. 2021 / Revision 2
10-FE06PPA020SJ01-LK23B58Z
datasheet
PFC Switching Characteristics
figure 37.
IGBT
figure 38.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
-1
10
-1
10
td(on)
tr
td(on)
tr
tf
tf
-2
10
-2
10
-3
10
-3
10
0
5
10
15
20
25
30
35
40
IC(A)
0
10
20
30
40
50
60
70
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
400
0/15
16
°C
V
150
400
0/15
20
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
16
figure 39.
FWD
figure 40.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,12
0,10
0,08
0,06
0,04
0,02
0,00
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
trr
trr
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
22
26 Nov. 2021 / Revision 2
10-FE06PPA020SJ01-LK23B58Z
datasheet
PFC Switching Characteristics
figure 41.
FWD
figure 42.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
2,25
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 43.
FWD
figure 44.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
IRM
IRM
IRM
IRM
IRM
IRM
0
5
10
15
20
25
30
35
40
0
10
20
30
40
50
60
70
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
20
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
23
26 Nov. 2021 / Revision 2
10-FE06PPA020SJ01-LK23B58Z
datasheet
PFC Switching Characteristics
figure 45.
FWD
figure 46.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
3500
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
3000
2500
2000
1500
1000
500
0
0
5
10
15
20
25
30
35
40
IC(A)
0
10
20
30
40
50
60
70
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
16
V
V
Ω
125 °C
150 °C
400
0/15
20
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 47.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
45
IC MAX
40
35
30
25
20
15
10
5
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
°C
Rgon
Rgoff
=
=
16
16
Ω
Ω
Copyright Vincotech
24
26 Nov. 2021 / Revision 2
10-FE06PPA020SJ01-LK23B58Z
datasheet
Switching Definitions
figure 48.
IGBT
figure 49.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 50.
IGBT
figure 51.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
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26 Nov. 2021 / Revision 2
10-FE06PPA020SJ01-LK23B58Z
datasheet
Switching Definitions
figure 52.
FWD
figure 53.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
26
26 Nov. 2021 / Revision 2
10-FE06PPA020SJ01-LK23B58Z
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-FE06PPA020SJ01-LK23B58Z
10-FE06PPA020SJ01-LK23B58Z-/7/
10-FE06PPA020SJ01-LK23B58Z-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
2,7
0
Function
DC-Rect
DC-Rect
S27
52,5
52,5
48
2
3
0
4
45
2,7
0
G27
5
32,7
30
PFC-
6
0
PFC-
7
25,5
22,5
19,1
19,1
20
0
S25
8
0
G25
9
0
Therm1
Therm2
DC+Inv
DC+Inv
G11
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
3
10,7
13,4
0
20
15
12
0
DC-1
G13
9
0
6
0
DC-2
G15
3
0
0
0
DC-3
DC+Inv
DC+Inv
G16
0
15,15
17,85
25,5
28,5
25,5
28,5
25,5
28,5
19,7
25,5
28,5
19,7
25,5
28,5
28,5
28,5
14,3
14,3
10,1
7,4
0
0
0
Ph3
7,7
7,7
15,4
15,4
23,4
23,4
23,4
42,4
42,4
42,4
49,8
52,5
52,5
49,8
32,9
32,9
G14
Ph2
G12
Ph1
S26
G26
PFC1
S28
G28
PFC2
DC+Rect
DC+Rect
ACIn1
ACIn1
PFC+
PFC+
Copyright Vincotech
27
26 Nov. 2021 / Revision 2
10-FE06PPA020SJ01-LK23B58Z
datasheet
Pinout
11,12,19,20
DC+Inv
33,34
DC+Rect
37,38
PFC+
T26
28
T28
T12
T14
T16
D32
D11
G14
D13
G16
D15
31
30
G26
S26
D48
D46
G28 G12
S28
25
23
21
27
35,36
PFC1
ACIn1
PFC2
Ph1
Ph2
26
24
29
T25
32
T27
D31
Ph3
22
8
4
3
G25
S25
D47
D45
G27
T11
T13
T15
D12
G13
D14
G15
D16
S27
G11
7
13
15
17
DC-1
14
DC-2
16
DC-3
18
DC-Rect
1,2
PFC-
5,6
Rt
Therm1
9
Therm2
10
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
IGBT
600 V
600 V
20 A
Inverter Switch
Inverter Diode
T15, T16
D11, D12, D13, D14,
D15, D16
FWD
15 A
T25, T26, T27, T28
D46, D45, D48, D47
D31, D32
IGBT
FWD
650 V
650 V
20 A
30 A
35 A
PFC Switch
PFC Diode
Rectifier
Thermistor
1600 V
Rectifier Diode
Thermistor
NCP21XW223-J-03-RA (Murata)
Rt
Copyright Vincotech
28
26 Nov. 2021 / Revision 2
10-FE06PPA020SJ01-LK23B58Z
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-FE06PPA020SJ01-LK23B58Z-D2-14
26 Nov. 2021
Change Thermistor
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
29
26 Nov. 2021 / Revision 2
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VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00368/img/page/10-FU073AA03_2250049_files/10-FU073AA03_2250049_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00368/img/page/10-FU073AA03_2250049_files/10-FU073AA03_2250049_2.jpg)
10-FU073AA030SM-PF04H06
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00358/img/page/10-FU094PB01_2196606_files/10-FU094PB01_2196606_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00358/img/page/10-FU094PB01_2196606_files/10-FU094PB01_2196606_2.jpg)
10-FU094PB017ME02-L620F36
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up
VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00362/img/page/10-FU094PB01_2214903_files/10-FU094PB01_2214903_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00362/img/page/10-FU094PB01_2214903_files/10-FU094PB01_2214903_2.jpg)
10-FU094PB017ME05-L620F31
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up
VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00358/img/page/10-FU127PA00_2194923_files/10-FU127PA00_2194923_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00358/img/page/10-FU127PA00_2194923_files/10-FU127PA00_2194923_2.jpg)
10-FU127PA008SC-L156E06
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00369/img/page/10-FU127PA01_2251830_files/10-FU127PA01_2251830_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00369/img/page/10-FU127PA01_2251830_files/10-FU127PA01_2251830_2.jpg)
10-FU127PA015SC-L158E06
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00358/img/page/10-FU127PA02_2194746_files/10-FU127PA02_2194746_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00358/img/page/10-FU127PA02_2194746_files/10-FU127PA02_2194746_2.jpg)
10-FU127PA025SC-L159E06
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00366/img/page/10-FX062TA09_2237210_files/10-FX062TA09_2237210_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00366/img/page/10-FX062TA09_2237210_files/10-FX062TA09_2237210_2.jpg)
10-FX062TA099FS-P980D57
Easy to use / drive;Extremly low losses;Very high commutation ruggedness
VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00358/img/page/10-FX074PA07_2196285_files/10-FX074PA07_2196285_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00358/img/page/10-FX074PA07_2196285_files/10-FX074PA07_2196285_2.jpg)
10-FX074PA075SM-L625F07
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00365/img/page/10-FX12PNA00_2232254_files/10-FX12PNA00_2232254_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00365/img/page/10-FX12PNA00_2232254_files/10-FX12PNA00_2232254_2.jpg)
10-FX12PNA005M7-P848C27
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
![](http://pdffile.icpdf.com/pdf2/p00358/img/page/10-PY06NIA10_2196318_files/10-PY06NIA10_2196318_1.jpg)
![](http://pdffile.icpdf.com/pdf2/p00358/img/page/10-PY06NIA10_2196318_files/10-PY06NIA10_2196318_2.jpg)
10-FY06NIA100SA-M135F08
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
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