10-F124NID150SH03-LG18F98 [VINCOTECH]
Easy paralleling;High speed switching;Low switching losses;
| 型号： | 10-F124NID150SH03-LG18F98 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;High speed switching;Low switching losses |
| 文件： | 总38页 (文件大小：4763K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
1500 V / 150 A
flowNPC 1 split
Features
flow 1 housing
● Enhanced efficiency
● Low inductive package
● Tandem diodes
LG18F98
LG28F98
Schematic
Target applications
● Solar Inverters
Types
● 10-F124NID150SH03-LG18F98
● 10-F124NID150SH03-LG18F98
● 10-F124NIE150SH03-LG28F98
LG18F98
LG28F98
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Switch
VCES
IC
Collector-emitter voltage
1200
109
450
243
±20
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
ICRM
Ptot
VGES
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
Ts = 80 °C
W
V
tSC
Tj ≤ 150 °C
VGE = 15 V
10
µs
V
Short circuit ratings
VCC
800
Tjmax
Maximum junction temperature
175
°C
Copyright Vincotech
1
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Diode
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
1300
115
300
300
175
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
tp limited by Tjmax
Tj = Tjmax
A
W
°C
Tjmax
Maximum Junction Temperature
Buck Sw. Protection Diode
VRRM
IF
IFSM
I2t
Ptot
Tjmax
Peak repetitive reverse voltage
1200
46
V
A
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
270
365
94
A
50 Hz Single Half Sine Wave
tp = 8,3 ms
A2s
W
°C
Total power dissipation
Tj = Tjmax
Maximum junction temperature
175
Boost Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
1200
139
300
254
±20
175
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
W
V
Maximum junction temperature
°C
Boost Diode
VRRM
IF
IFSM
I2t
Ptot
Tjmax
Peak repetitive reverse voltage
1200
46
V
A
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
270
365
94
A
50 Hz Single Half Sine Wave
tp = 8,3 ms
A2s
W
°C
Total power dissipation
Tj = Tjmax
Maximum junction temperature
175
Copyright Vincotech
2
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Boost Sw. Inv. Diode
VRRM
IF
IFSM
I2t
Ptot
Tjmax
Peak Repetitive Reverse Voltage
1600
50
V
A
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
490
1200
78
A
50 Hz Single Half Sine Wave
tp = 10 ms
A2s
W
°C
Total power dissipation
Tj = Tjmax
Maximum Junction Temperature
150
Boost Sw. Protection Diode
VRRM
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
1600
50
V
A
IF
IFSM
I2t
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
490
1200
78
A
50 Hz Single Half Sine Wave
tp = 10 ms
A2s
W
°C
Ptot
Tjmax
Total power dissipation
Tj = Tjmax
Maximum Junction Temperature
150
Boost D. Protection Diode
VRRM
IF
IFSM
I2t
Ptot
Tjmax
Peak Repetitive Reverse Voltage
1200
32
V
A
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
170
145
71
A
50 Hz Single Half Sine Wave
tp = 10 ms
A2s
W
°C
Total power dissipation
Tj = Tjmax
Maximum Junction Temperature
175
Copyright Vincotech
3
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Storage temperature
Tstg
Tjop
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
Clearance
min. 12,7
min. 12,7
> 200
mm
mm
Comparative Tracking Index
*100% Tested in production
CTI
Copyright Vincotech
4
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0052 25
25
5,3
5,8
6,3
V
V
1,78
2,16
2,48
2,56
2,42
Collector-emitter saturation voltage
VCEsat
15
150
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
2
µA
nA
Ω
20
240
none
8800
470
Cies
Cres
Qg
f = 1 MHz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
15
1140
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,39
K/W
Dynamic
25
116
120
120
20
td(on)
125
150
25
Turn-on delay time
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
23
24
213
267
279
20
Rgoff = 4 Ω
Rgon = 4 Ω
ns
td(off)
Turn-off delay time
Fall time
±15
600
150
tf
66
75
6,23
8,57
9,33
5,36
9,58
10,74
Qr
FWD
Qr
FWD
Qr
FWD
= 4,4 μC
= 8,4 μC
= 9,7 μC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
125
150
Copyright Vincotech
5
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Diode
Static
25
3,12
3,00
2,96
3,84
7,6
VF
Ir
125
150
Forward voltage
150
V
Reverse leakage current
1300
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,32
K/W
Dynamic
25
110
139
151
IRRM
125
150
25
Peak recovery current
A
79
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
111
124
ns
di/dt = 8628 A/μs
di/dt = 8113 A/μs ±15
di/dt = 8006 A/μs
4,42
8,38
9,74
1,50
3,08
3,62
7069
1003
1214
600
150
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Buck Sw. Protection Diode
Static
25
2,21
2,31
2,22
2,54
VF
IR
125
150
25
Forward voltage
50
V
60
Reverse leakage current
1200
µA
150
8800
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,02
K/W
Copyright Vincotech
6
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,015
150
25
5,4
6
6,6
1,9
V
V
25
1,63
1,80
1,85
Collector-emitter saturation voltage
VCEsat
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
220
µA
nA
Ω
20
1000
2
Cies
Coes
Cres
Qg
32000
960
Output capacitance
#VALUE!
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
380
15
600
150
980
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,37
K/W
Dynamic
25
617
616
613
td(on)
Turn-on delay time
125
150
25
89
tr
Rise time
125
150
25
106
109
407
Rgoff = 8 Ω
Rgon = 8 Ω
ns
td(off)
Turn-off delay time
Fall time
125
150
25
125
150
25
125
150
25
125
150
440
451
78
101
±15
600
156
tf
107
17,98
22,93
22,80
11,54
15,65
15,94
Qr
FWD
Qr
FWD
Qr
FWD
= 5 μC
= 8,8 μC
= 10,5 μC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
Copyright Vincotech
7
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Diode
Static
25
2,21
2,31
2,22
2,54
VF
IR
Forward voltage
50
125
150
25
V
60
Reverse leakage current
1200
µA
150
8800
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,02
K/W
Dynamic
25
43
48
50
IRRM
125
150
25
125
150
25
125
150
25
125
150
25
Peak recovery current
A
388
590
672
4,99
8,80
10,49
1,69
3,15
3,81
1139
326
238
trr
Qr
Reverse recovery time
ns
di/dt = 1701 A/μs
di/dt = 1425 A/μs
di/dt = 1456 A/μs
±15
600
156
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
125
150
Boost Sw. Inv. Diode
Static
25
1,14
1,08
1,07
1,21
VF
Ir
125
150
25
Forward voltage
50
V
50
Reverse leakage current
1600
µA
145
1100
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,90
K/W
Copyright Vincotech
8
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Sw. Protection Diode
Static
25
1,14
1,08
1,07
1,21
VF
Ir
Forward voltage
50
125
150
25
V
50
Reverse leakage current
1600
µA
145
1100
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,90
K/W
Boost D. Protection Diode
Static
25
2,38
2,41
2,37
2,62
VF
Ir
125
150
25
Forward voltage
35
V
60
Reverse leakage current
1200
µA
150
5500
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,34
22
K/W
Thermistor
Rated resistance
R
ΔR/R
P
25
kΩ
%
Deviation of R100
R100 = 1484 Ω
100
25
-5
5
Power dissipation
5
mW
mW/K
Power dissipation constant
25
1,5
B(25/50)
B-value
Tol. ±1 %
25
25
3962
4000
K
K
B-value
B(25/100) Tol. ±1 %
Vincotech NTC Reference
I
Copyright Vincotech
9
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
125
μs
°C
VGE
=
Tj:
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
I
Z
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,39
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
6,04E-02
8,82E-02
1,40E-01
6,72E-02
2,05E-02
1,38E-02
3,83E+00
1,06E+00
1,49E-01
4,78E-02
8,33E-03
7,18E-04
Copyright Vincotech
10
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Buck Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
I
D =
single pulse
Ts
=
80
ºC
VGE
=
±15
Tjmax
V
Tj =
Copyright Vincotech
11
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Buck Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
Z
10-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
tp
=
250
μs
25 °C
125 °C
150 °C
tp / T
0,32
T j:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ
(s)
2,36E-02
4,54E-02
6,78E-02
1,22E-01
3,48E-02
7,34E-03
1,51E-02
6,39E+00
1,45E+00
2,29E-01
6,68E-02
9,88E-03
1,81E-03
3,29E-04
Copyright Vincotech
12
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Buck Sw. Protection Diode Characteristics
figure 1.
Prot. Diode
figure 2.
Prot. Diode
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
1,02
Tj:
R th(j-s)
K/W
Prot. Diode thermal model values
R (K/W)
τ
(s)
5,56E-02
1,14E-01
4,09E-01
2,64E-01
9,94E-02
7,49E-02
3,42E+00
5,52E-01
9,78E-02
3,21E-02
6,42E-03
9,84E-04
Copyright Vincotech
13
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
25
7 V to 17 V in steps of 1 V
μs
VGE
=
Tj:
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
I
Z
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,37
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
6,05E-02
8,70E-02
1,28E-01
6,38E-02
2,32E-02
1,16E-02
4,47E+00
9,84E-01
1,45E-01
4,36E-02
8,52E-03
5,08E-04
Copyright Vincotech
14
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Boost Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
I
D =
single pulse
80
Ts
=
ºC
V
VGE
=
±15
Tj =
Tjmax
Copyright Vincotech
15
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
1,02
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ
(s)
5,56E-02
1,14E-01
4,09E-01
2,64E-01
9,94E-02
7,49E-02
3,42E+00
5,52E-01
9,78E-02
3,21E-02
6,42E-03
9,84E-04
Copyright Vincotech
16
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Boost Sw. Inv. Diode Characteristics
figure 1.
Inverse Diode
figure 2.
Inverse Diode
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
Z
10-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
tp
=
250
μs
25 °C
125 °C
150 °C
tp / T
0,90
T j:
R th(j-s)
K/W
Inverse Diode thermal model values
R (K/W)
τ
(s)
2,22E-01
4,39E-01
8,14E-02
3,58E-02
2,31E-01
7,58E-02
1,11E-02
1,56E-03
Copyright Vincotech
17
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Boost Sw. Protection Diode Characteristics
figure 1.
Prot. Diode
figure 2.
Prot. Diode
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
Z
10-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
tp
=
250
μs
25 °C
125 °C
150 °C
tp / T
0,90
T j:
R th(j-s)
K/W
Prot. Diode thermal model values
R (K/W)
τ
(s)
2,22E-01
4,39E-01
8,14E-02
3,58E-02
2,31E-01
7,58E-02
1,11E-02
1,56E-03
Copyright Vincotech
18
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Boost D. Protection Diode Characteristics
figure 1.
Prot. Diode
figure 2.
Prot. Diode
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
D = 0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
R th(j-s)
tp
=
250
μs
25 °C
125 °C
150 °C
tp / T
1,34
T j:
K/W
Prot. Diode thermal model values
R (K/W)
τ
(s)
3,06E-02
1,47E-01
6,10E-01
2,96E-01
1,39E-01
1,19E-01
9,16E+00
6,10E-01
8,89E-02
2,14E-02
5,05E-03
9,19E-04
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Typical NTC characteristic
Thermistor
as a function of temperature
R = f(T)
Copyright Vincotech
19
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Buck Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
25 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
:
125 °C
150 °C
600
±15
150
V
V
A
VCE
VGE
=
=
=
=
600
±15
4
V
V
T
j
VCE
VGE
I C
=
=
=
Tj:
Ω
Ω
R gon
R goff
4
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
600
±15
4
V
V
Ω
:
600
±15
150
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
20
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Buck Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
150
600
±15
4
°C
150
600
±15
150
°C
V
Tj =
Tj =
V
V
Ω
Ω
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
VGE
I C
V
A
4
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
25 °C
600
±15
4
V
V
Ω
600
V
V
A
25 °C
125 °C
150 °C
At
VCE
=
At
VCE =
:
Tj
125 °C
150 °C
±15
150
:
Tj
VGE
R gon
=
=
VGE
I C
=
=
Copyright Vincotech
21
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Buck Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
600
25 °C
V
600
±15
150
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
±15
4
V
:
Tj
125 °C
150 °C
:
Tj
=
=
Ω
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
600
25 °C
V
V
600
±15
150
V
V
A
25 °C
125 °C
150 °C
At
VCE
=
At
VCE
VGE
I C
=
±15
4
:
Tj
125 °C
150 °C
:
Tj
VGE
=
=
=
Ω
R gon
=
Copyright Vincotech
22
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Buck Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
diF/
dt
t
t
dirr/dt
i
dir r
/
dt
i
25 °C
At
VCE
=
600
±15
4
V
V
Ω
At
VCE
VGE
I C
=
600
±15
150
V
V
A
25 °C
:
Tj
125 °C
150 °C
:
Tj
125 °C
150 °C
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
IC MAX
I
I
V
At
Tj
=
=
=
175
°C
Ω
R gon
R goff
4
4
Ω
Copyright Vincotech
23
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Buck Switching Characteristics
General conditions
=
=
=
125 °C
4 Ω
T j
Rgon
R goff
4 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
VGE
VCE
IC
IC
VGE
tEoff
VCE
tEon
-15
VGE (0%) =
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
150
V
600
V
A
150
A
0,267
0,479
μs
μs
0,120
0,481
μs
μs
t doff
t Eoff
=
=
tdon
tEon
=
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
VCE
IC
VCE
tr
IC
tf
600
V
600
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
150
A
150
A
0,066
μs
0,023
μs
tr
=
Copyright Vincotech
24
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Buck Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Eoff
Eon
Pon
Poff
tEoff
tEon
90,12
9,58
0,48
kW
mJ
μs
90,12
8,57
0,48
kW
mJ
μs
P off (100%) =
Eoff (100%) =
P on (100%) =
Eon (100%) =
t Eoff
=
tEon =
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
IF
VF
fitted
600
V
VF (100%) =
I F (100%) =
I RRM (100%) =
150
A
-139
0,111
A
μs
t rr
=
Copyright Vincotech
25
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Buck Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
Erec
Qr
tErec
IF
Prec
150
A
90,12
3,08
0,22
kW
mJ
μs
I F (100%) =
Q r (100%) =
P rec (100%) =
Erec (100%) =
8,38
0,22
μC
μs
t Qr
=
tErec =
Copyright Vincotech
26
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
25 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
:
125 °C
150 °C
600
±15
156
V
V
A
VCE
VGE
=
=
=
=
600
±15
8
V
V
T
j
VCE
VGE
I C
=
=
=
Tj:
Ω
Ω
R gon
R goff
8
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
600
±15
8
V
V
Ω
:
600
±15
156
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
27
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
150
600
±15
8
°C
150
600
±15
156
°C
V
Tj =
Tj =
VCE
=
=
=
=
V
V
Ω
Ω
VCE
=
=
=
VGE
R gon
R goff
VGE
I C
V
A
8
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon)
t
t
25 °C
At
VCE
VGE
=
=
=
600
±15
8
V
V
Ω
At
VCE
VGE
I C
=
=
=
600
V
V
A
25 °C
125 °C
150 °C
:
Tj
125 °C
150 °C
±15
156
:
Tj
R gon
Copyright Vincotech
28
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
600
25 °C
V
600
±15
156
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
=
=
=
At
VCE
VGE
I C
=
±15
8
V
:
Tj
125 °C
150 °C
:
Tj
=
=
Ω
R gon
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
600
25 °C
V
V
600
±15
156
V
V
A
25 °C
125 °C
150 °C
At
VCE
=
=
=
At
VCE
VGE
I C
=
=
=
±15
8
:
Tj
125 °C
150 °C
:
Tj
VGE
Ω
R gon
Copyright Vincotech
29
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
diF/
dt
t
t
i
dirr/dt
i
dir r
/
dt
25 °C
At
VCE
=
=
=
600
±15
8
V
V
Ω
At
VCE
VGE
=
=
600
±15
156
V
V
A
25 °C
:
Tj
125 °C
150 °C
:
Tj
125 °C
150 °C
VGE
R gon
I C=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
IC MAX
I
I
V
At
Tj
=
=
=
175
°C
Ω
R gon
R goff
8
8
Ω
Copyright Vincotech
30
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Boost Switching Characteristics
General conditions
=
=
=
125 °C
8 Ω
T j
Rgon
R goff
8 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
IC
tdoff
VCE
IC
VGE
VGE
tEoff
VCE
tEon
-15
VGE (0%) =
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
156
V
600
V
A
156
A
0,440
0,880
μs
μs
0,616
1,401
μs
μs
t doff
t Eoff
=
=
tdon
tEon
=
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
VCE
IC
VCE
tr
tf
600
V
600
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
156
A
156
A
0,101
μs
0,106
μs
tr
=
Copyright Vincotech
31
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Eon
Poff
Pon
Eoff
tEoff
tEon
93,69
15,65
0,88
kW
mJ
μs
93,69
22,93
1,40
kW
mJ
μs
P off (100%) =
Eoff (100%) =
P on (100%) =
Eon (100%) =
t Eoff
=
tEon =
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
IF
fitted
VF
600
V
VF (100%) =
I F (100%) =
I RRM (100%) =
156
A
-48
A
0,590
μs
t rr
=
Copyright Vincotech
32
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Boost Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec
)
IF
Qr
Erec
tErec
Prec
156
A
93,69
3,15
1,17
kW
mJ
μs
I F (100%) =
Q r (100%) =
P rec (100%) =
Erec (100%) =
8,80
1,17
μC
μs
t Qr
=
tErec =
Copyright Vincotech
33
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Ordering Code & Marking
Version
without thermal paste 17 mm housing with solder pins
with thermal paste 17 mm housing with solder pins
Ordering Code
10-F124NID150SH03-LG18F98
10-F124NID150SH03-LG18F98-/3/
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
SSSS
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
High Side Module 10-F124NID150SH03-LG18F98
Outline
Pin table [mm]
Pin
1
X
53
Y
9
Function
GND
GND
GND
GND
DC+
DC+
DC+
DC+
G11
2
53
6
3
53
3
4
53
0
5
38,8
35,8
38,8
35,8
20,55
20,55
3
0
6
0
7
3
8
3
9
0
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
3
S11
0
Therm1
Therm2
Ph
0
0
0
29
29
29
29
25,95
24,95
29
19
29
26
23
20
3
Ph
6
Ph
9
Ph
10,1
13,1
25,5
35,65
53
S13
G13
TM15
TM11
DC-
53
DC-
53
DC-
DC-
53
Copyright Vincotech
34
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
High Side Module 10-F124NID150SH03-LG18F98
Pinout
Identification
ID
T11
Component
IGBT
Voltage
1200 V
1300 V
1200 V
1200 V
1600 V
1200 V
1600 V
1200 V
Current
150 A
150 A
50 A
Function
Comment
Buck Switch
Serial devices.
Values apply to complete device.
D11-1, D11-2
D15
FWD
Buck Diode
FWD
Buck Sw. Protection Diode
Boost Switch
T13
IGBT
150 A
50 A
D13
Rectifier
FWD
Boost Diode
D41
50 A
Boost Sw. Inv. Diode
Boost Sw. Protection Diode
Boost D. Protection Diode
Thermistor
D43
Rectifier
FWD
50 A
D45
35 A
Rt
NTC
Copyright Vincotech
35
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Ordering Code & Marking
Version
without thermal paste 17 mm housing with solder pins
with thermal paste 17 mm housing with solder pins
Ordering Code
10-F124NIE150SH03-LG28F98
10-F124NIE150SH03-LG28F98-/3/
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
SSSS
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
Low Side Module 10-F124NIE150SH03-LG28F98
Outline
Pin table [mm]
Pin
X
Y
Function
GND
GND
GND
GND
DC-
1
53
53
9
6
2
3
53
3
4
53
0
5
41,15
38,15
35,15
32,15
38,75
35,75
12,9
9,9
0
6
0
DC-
7
0
DC-
8
0
DC-
9
3
Therm1
Therm2
S12
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
3
2,55
3,55
20
23
26
29
G12
0
Ph
0
Ph
0
Ph
0
Ph
14,15 18,55
17,15 17,55
G14
S14
37,15
53
20,7
29
TM12
DC+
DC+
DC+
DC+
TM14
53
26
53
23
53
43,6
20
14,55
Copyright Vincotech
36
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Low Side Module 10-F124NIE150SH03-LG28F98
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T12
IGBT
1200 V
150 A
Buck Switch
Serial devices.
Values apply to complete device.
D12-1, D12-2
FWD
FWD
1300 V
1200 V
1200 V
1600 V
1200 V
1600 V
1200 V
150 A
50 A
150 A
50 A
50 A
50 A
35 A
Buck Diode
Buck Sw. Protection Diode
Boost Switch
D16
T14
D14
D42
D44
D46
Rt
IGBT
Rectifier
FWD
Boost Diode
Boost Sw. Inv. Diode
Boost Sw. Protection Diode
Boost D. Protection Diode
Thermistor
Rectifier
FWD
NTC
Copyright Vincotech
37
09 Jul. 2019 / Revision 3
10-F124NID150SH03-LG18F98
10-F124NIE150SH03-LG28F98
.
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-F124NIx150SH03-LGx8F98-D3-14
09 Jul. 2019
Marketing application voltage modified
1
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
38
09 Jul. 2019 / Revision 3
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