TIP3CG-X-T3P-T [UTC]
HIGH POWER TRANSISTORS;
| 型号： | TIP3CG-X-T3P-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH POWER TRANSISTORS 高功率电源 |
| 文件： | 总4页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
TIP36C
PNP SILICON TRANSISTOR
HIGH POWER TRANSISTORS
DESCRIPTION
The UTC TIP36C is a PNP Expitaxial-Base transistor,
designed for using in general purpose amplifier and switching
applications. Complement to TIP35C.
INTERNAL SCHEMATIC DIAGRAM
C
(2)
(1)
B
(3)
E
ORDERING INFORMATION
Order Number
Pin Assignment
Packing
Package
Lead Free
Halogen Free
1
B
B
2
C
C
3
E
E
TO-3P
TO-3PN
Tube
Tube
TIP36CL-x-T3P-T
TIP36CL-x-T3N-T
TIP3CG-x-T3P-T
TIP3CG-x-T3N-T
www.unisonic.com.tw
1 of 4
Copyright © 2013 Unisonic Technologies Co., Ltd
QW-R214-014.C
TIP36C
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
-100
UNIT
V
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
-100
V
-5
V
-25
A
Collector Peak Current
Base Current
ICM
-50
A
IB
-5
A
Total Dissipation (TC =25°C)
Junction Temperature
Storage Temperature
PD
125
W
C
C
TJ
+150
-65 ~ +150
TSTG
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance Junction-Case
SYMBOL
MIN
TYP
MAX
1
UNIT
θJC
C/W
ELECTRICAL CHARACTERISTICS (TC=25C, unless otherwise specified)
PARAMETER
Collector Cut-off Current (IE = 0)
SYMBOL
ICBO
TEST CONDITIONS
VCB = -100 V
VEB = -5 V
MIN TYP MAX UNIT
-10
μA
μA
V
Emitter Cut-off Current (IC = 0)
IEBO
-10
Collector-Emitter Sustaining Voltage (IB = 0)
V(BR)CEO IC = -50 mA
-100
IB = -1.5 A, IC = -15 A
-1.8
-4
V
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
VCE(SAT)
IB = -5 A, IC = -25 A
VCE =-5 V, IC = -5 A
VCE = -5 V, IC = -1.5 A
VCE = -4 V, IC = -15 A
VCE = -5 V, IC = -1 A
V
VBE(ON)
hFE1
hFE2
fT
-1.5
160
V
55
15
3
DC Current Gain
Transition Frequency
MHz
CLASSIFICATION OF hFE1
RANK
R
O
RANGE
55~110
80~160
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R214-014.C
www.unisonic.com.tw
TIP36C
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R214-014.C
www.unisonic.com.tw
TIP36C
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R214-014.C
www.unisonic.com.tw
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