TIP41 [THINKISEMI]
NPN Silicon Epitaxial Power Transistor; NPN硅外延功率晶体管
| 型号： | TIP41 |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | NPN Silicon Epitaxial Power Transistor |
| 文件： | 总2页 (文件大小：452K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TIP41/41A/41B/41C
TIP41/TIP41A/TIP41B/TIP41C
Pb Free Plating Product
NPN Silicon Epitaxial Power Transistor
±0.20
±0.20
9.90
20
4.50
±0.
0
3.6
±0.20
1.30
φ
FEATURES:
* Medium Power Linear Switching Applications
* Complement to TIP42/TIP42A/TIP42B/TIP42C
COLLECTOR
2
±0.20
2.40
±0.20
1.27
BASE
1
±0.20
1.52
3
3
2
1. BASE
2. COLLECTOR
3. EMITTER
EMITTER
±0.20
1
0.80
2.54typ
2.54typ
TO-220C
±0.20
0.50
Package Dimension
Dimensions in Millimeters
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
Parameter
TIP41A
60
Units
TIP41
40
TIP41B TIP41C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
80
80
100
100
VCEO
VEBO
IC
60
40
5
6
V
A
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
PC
W
℃
2
TJ
150
Tstg
Storage Temperature
-55-150
℃
Page 1/2
http://www.thinkisemi.com/
© 2006 Thinki Semiconductor Co.,Ltd.
TIP41/41A/41B/41C
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
MAX
UNIT
TIP41
TIP41A
TIP41B
TIP41C
TIP41
40
60
80
V
Collector-base breakdown voltage
IC=1mA, I
E=0
V(BR)CBO
100
40
60
80
TIP41A
TIP41B
TIP41C
V(BR)CEO
V(BR)EBO
ICBO
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
IC=30mA, I
B=0
V
V
100
5
IE= 1mA, I
VCB=40V, I
C=0
TIP41
TIP41A
TIP41B
TIP41C
E=0
E=0
E=0
V
CB=60V, I
Collector cut-off current
mA
0.4
VCB=80V, I
VCB=100V, IE =0
TIP41/41A
VCE=30V, IB=0
ICEO
Collector cut-off current
Emitter cut-off current
mA
mA
0.7
1
=0
TIP41B/41C
VCE=60V, IB
IEBO
VEB=5V, IC=0
hFE(1)
VCE=4V, I
C=0.3A
30
15
DC current gain
hFE(2)
VCE=4V, I
C=3A
75
1.5
VCE (sat) IC=6A, IB =0.6A
VCE=4V, I
Collector-emitter saturation voltage
Base-emitter voltage
V
V
C=6A
VBE(on)
2
VCE=10V, IC=0.5A
f = 1MHz
MHz
Transition Frequency
f T
3
Page 2/2
http://www.thinkisemi.com/
© 2006 Thinki Semiconductor Co.,Ltd.
相关型号：
TIP41-6255
Power Bipolar Transistor, 7A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS
TIP41-6264
Power Bipolar Transistor, 7A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS
TIP41-DR6259
Power Bipolar Transistor, 7A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS
TIP41-DR6260
Power Bipolar Transistor, 7A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
RENESAS
©2020 ICPDF网 联系我们和版权申明