TIP41 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | TIP41 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
TIP41/41A/41B/41C
DESCRIPTION
·With TO-220C package
·Complement to type TIP42/42A/42B/42C
APPLICATIONS
·For medium power linear switching
applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
40
UNIT
TIP41
TIP41A
TIP41B
TIP41C
TIP41
60
VCBO
Collector-base voltage
Open emitter
V
80
100
40
TIP41A
TIP41B
TIP41C
60
VCEO
Collector-emitter voltage
Open base
V
80
100
5
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current (DC)
Collector current-Pulse
Base current
Open collector
V
A
A
A
6
10
2
TC=25℃
Ta=25℃
65
PC
Collector power dissipation
W
2
Tj
Junction temperature
Storage temperature
150
-65~150
℃
℃
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
TIP41/41A/41B/41C
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
40
TYP.
MAX
UNIT
TIP41
TIP41A
TIP41B
TIP41C
60
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=30mA; IB=0
V
80
100
VCEsat
Collector-emitter saturation voltage
Base-emitter on voltage
TIP41
IC=6A; IB=0.6A
IC=6A ; VCE=4V
VCE=40V; VEB=0
VCE=60V; VEB=0
VCE=80V; VEB=0
VCE=100V; VEB=0
VCE=30V; IB=0
VCE=60V; IB=0
VEB=5V; IC=0
1.5
2.0
V
V
VBE
TIP41A
Collector
ICES
0.4
mA
cut-off current
TIP41B
TIP41C
TIP41/41A
Collector
ICEO
0.7
1.0
mA
mA
cut-off current
TIP41B/41C
IEBO
hFE-1
hFE-2
fT
Emitter cut-off current
DC current gain
IC=0.3A ; VCE=4V
IC=3A ; VCE=4V
IC=0.5A ; VCE=10V
30
15
3
DC current gain
75
Transiton frequency
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
TIP41/41A/41B/41C
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
TIP41/41A/41B/41C
4
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