TIP41 [BOCA]
General Purpose Amplifier and Switching Applications; 通用放大器和开关应用
| 型号： | TIP41 |
| 厂家： | 
BOCA SEMICONDUCTOR CORPORATION |
| 描述： | General Purpose Amplifier and Switching Applications |
| 文件： | 总2页 (文件大小：28K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TO-220 Plastic Package
TIP41, TIP41A, TIP41B, TIP41C
TIP42, TIP42A, TIP42B, TIP42C
Boca Semiconductor Corp (BSC)
TIP 41, 41A, 41B, 41C
NPN PLASTIC POWER TRANSISTORS
TIP 42, 42A, 42B, 42C
PNP PLASTIC POWER TRANSISTORS
General Purpose Amplifier and Switching Applications
PIN CONFIGURATION
1. BASE
4
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
3
C
DIM MIN.
MAX.
E
B
F
A
B
C
D
E
14.42
9.63
3.56
16.51
10.67
4.83
0.90
1.40
3.88
2.79
3.43
0.56
14.73
4.07
2.92
31.24
1.15
3.75
2.29
2.54
1
2
3
F
G
H
J
K
L
M
N
O
12.70
2.80
2.03
J
D
G
M
DEG 7
ABSOLUTE MAXIMUM RATINGS
41 41A 41B 41C
42 42A 42B 42C
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current
V
V
max. 40
max. 40
max.
max.
max.
60
60
80 100
80 100
V
V
A
W
°C
CBO
CEO
I
6.0
65
C
Total power dissipation up to T = 25°C
P
C
tot
Junction temperature
T
j
150
Collector-emitter saturation voltage
I
C
= 6 A; I = 0.6 A
V
CEsat
max.
1.5
V
B
D.C. current gain
I
C
= 3 A; V = 4 V
h
FE
min.
max.
15
75
CE
RATINGS (at T =25°C unless otherwise specified)
A
41 41A 41B 41C
42 42A 42B 42C
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
V
V
V
max. 40
max. 40
max.
60
60
80 100
80 100
V
V
V
A
CBO
CEO
EBO
5.0
6.0
I
max.
C
http://www.bocasemi.com
page: 1
TIP41, TIP41A, TIP41B, TIP41C
TIP42, TIP42A, TIP42B, TIP42C
Collector current (Peak value)
Base current
Total power dissipation up to T = 25°C
Derate above 25°C
Total power dissipation up to T = 25°C
Derate above 25°C
Junction temperature
Storage temperature
I
max.
max.
max.
max.
max.
max.
max.
10
2.0
65
0.52
2.0
A
A
CM
I
B
P
P
W
W/
W
W/
°C
C
tot
°C
A
tot
0.016
150
–65 to +150
°C
T
T
j
ºC
stg
THERMAL RESISTANCE
From junction to ambient
From junction to case
R
R
62.5
1.92
°C/W
°C/W
th j–a
th j–c
CHARACTERISTICS
T
amb
= 25°C unless otherwise specified
41 41A 41B 41C
42 42A 42B 42C
Collector cutoff current
I
= 0; V = 30 V
I
CEO
max. 0.7 0.7
–
–
mA
B
CE
= 0; V = 60 V
I
I
max. –
max.
–
0.7 0.7 mA
mA
B
CE
CEO
V
= 0; V = V
I
CES
0.4
1.0
BE
CE CEO
Emitter cut-off current
I
= 0; V = 5 V
I
EBO
max.
mA
C
EB
Breakdown voltages
= 30 mA; I = 0
I
V
* min. 40
min. 40
min.
60
60
80 100
80 100
V
V
V
C
B
CEO(sus)
CBO
I
= 1 mA; I = 0
V
V
C
E
I
= 1 mA; I = 0
5.0
1.5
2.0
30
E
C
EBO
Saturation voltage
I
= 6 A; I = 0.6 A
V *
CEsat
max.
max.
min.
V
V
C
B
Base-emitter on voltage
I
= 6 A; V = 4 V
V *
BE(on)
C
CE
D.C. current gain
= 0.3 A; V
I
C
= 4 V
h
FE
*
CE
I
C
= 3 A; V = 4 V
CE
h
FE*
min.
max.
15
75
Small-signal current gain
= 0.5 A; V = 10 V; f = 1 KHz
I
| h |
fe
min.
20
3
C
CE
Transition frequency
= 0.5 A; V = 10 V; f = 1 MHz
I
f
T
min. (1)
MHz
C
CE
* Pulse test: pulse width ≤ 300 µs, duty cycle ≤ 2%.
(1) f = | h | • f
T
fe test
http://www.bocasemi.com
page: 2
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