60N08L-TA3-T [UTC]
60 Amps, 80 Volts N-CHANNEL POWER MOSFET; 60安培， 80伏特N沟道功率MOSFET
| 型号： | 60N08L-TA3-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 60 Amps, 80 Volts N-CHANNEL POWER MOSFET |
| 文件： | 总6页 (文件大小：187K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
60N08
Preliminary
Power MOSFET
60 Amps, 80 Volts
N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 60N08 is an N-channel power MOSFET adopting UTC’s
advanced planar stripe and DMOS technology to provide designers
with perfectly high switching speed and minimum on-state resistance.
It also can withstand high energy pulse in the avalanche and
commutation modes.
The UTC 60N08 is applied in low voltage applications such as DC
motor control, automotive, and high efficiency switching for DC/DC
converters.
FEATURES
* 60A, 80V, RDS(ON)=0.024Ω @ VGS=10V
* High switching speed
* 100% avalanche tested
SYMBOL
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
1
2
D
D
3
S
S
Lead Free
Halogen Free
G
G
60N08L-TA3-T
60N08L-TF1-T
60N08G-TA3-T
60N08G-TF1-T
TO-220
Tube
Tube
TO-220F1
Note: Pin Assignment: G: Gate D: Drain S: Source
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60N08
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
Drain to Source Voltage
SYMBOL
VDSS
VGSS
ID
RATINGS
80
UNIT
V
Gate to Source Voltage
±25
60
V
Continuous
A
Continuous Drain Current
Pulsed
IDM
176
560
8.5
A
Single Pulsed (Note 2)
Repetitive (Note 1)
EAS
mJ
mJ
V/ns
W
Avalanche Energy
EAR
Peak Diode Recovery dv/dt (Note 3)
dv/dt
6.5
TO-220
Power Dissipation
100
70
PD
TO-220F1
W
Junction Temperature
Storage Temperature
TJ
+150
°C
TSTG
-55 ~ +175
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
TO-220
SYMBOL
RATINGS
62.5
UNIT
°C/W
°C/W
°C/W
°C/W
Junction to Ambient
θJA
TO-220F1
TO-220
62.5
1.25
Junction to Case
θJC
TO-220F1
1.77
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60N08
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
80
V
V/°C
µA
Breakdown Voltage Temperature Coefficient
ΔBVDSS/ΔTJ ID=250μA,Referenced to 25°C
0.07
VDS=80V, VGS=0V
IDSS
1
Drain-Source Leakage Current
VDS=64V, TC=150°C
10
µA
Forward
Gate-Source Leakage Current
Reverse
VDS=0V ,VGS=+25V
IGSS
+100 nA
VDS=0V ,VGS=-25V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
VGS(TH)
VDS=VGS, ID=250µA
2.0
4.0
V
Ω
S
RDS(ON) VGS=10V, ID=30A
0.018 0.024
31
gFS
VDS=30V, ID=30A (Note 4)
CISS
COSS
CRSS
1450 1900
pF
pF
pF
V
DS=25V,VGS=0V,f=1.0MHz
DS=64V, VGS=10V, ID=60A
Output Capacitance
520
120
680
155
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
50
9.3
25
65
nC
nC
nC
ns
ns
ns
ns
V
Gate-Source Charge
(Note 4,5)
Gate-Drain Charge
Turn-ON Delay Time
16.5
200
70
45
Turn-ON Rise Time
VDD=40V, ID=60A,
RG=25Ω (Note 4,5)
410
150
200
Turn-OFF Delay Time
Turn-OFF Fall Time
tD(OFF)
tF
95
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS
60
176
1.5
A
A
ISM
VSD
tRR
IS =60A, VGS=0V
V
VGS=0V, IS=60A,
dIF/dt=100A/μs (Note 4)
73
ns
μC
QRR
185
Notes : 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=0.4mH, IAS=44A, VDD=25V, RG=25Ω, Starting TJ=25°C
3. ISD ≤60A, di/dt ≤300A/μs, VDD ≤BVDSS, Starting TJ=25°C
4. Pulse Test : Pulse width≤300μs, Duty cycle≤2%
5. Essentially independent of operating temperature
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60N08
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width
D=
VGS
Gate Pulse Period
10V
(Driver)
I
FM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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15N65
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
Unclamped Inductive Switching Waveforms
Unclamped Inductive Switching Test Circuit
VDS
1
2
BVDSS
BVDSS-VDD
2
EAS
=
LIAS
BVDSS
IAS
RG
ID
L
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
Time
tP
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15N65
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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