2SD880_15 [UTC]
NPN EPITAXIAL TRANSISTOR;
| 型号： | 2SD880_15 |
| 厂家： | 
Unisonic Technologies |
| 描述： | NPN EPITAXIAL TRANSISTOR |
| 文件： | 总4页 (文件大小：184K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SD880
NPN SILICON TRANSISTOR
NPN EPITAXIAL TRANSISTOR
DESCRIPTION
The UTC 2SD880 is designed for audio frequency power
amplifier applications.
FEATURES
* High DC Current Gain: hFE=200(Max.)(VCE=5V, IC=0.5A)
* Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)
* Complementary to 2SB834
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
2SD880G-AB3-R
2SD880G-TA3-T
1
B
B
2
C
C
3
E
E
-
SOT-89
TO-220
Tube
Tube
2SD880L-TA3-T
Note: Pin Assignment: B: Base C: Collector
E: Emitter
MARKING
SOT-89
TO-220
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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QW-R203-013.G
2SD880
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
UNIT
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
60
V
V
V
A
A
60
7
3
Base Current
IB
0.5
SOT-89
TO-220
SOT-89
TO-220
0.55
1.5
TA=25
TC=25
Power Dissipation
PD
W
3
30
Junction Temperature
Storage Temperature
TJ
150
-55~+150
W
TSTG
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
BVCEO
ICBO
TEST CONDITIONS
IC=50mA, IE=0
MIN TYP MAX UNIT
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
60
V
µA
µA
V
VCB=60V, IE=0
100
100
1
Emitter Cut-Off Current
IEBO
VEB=7V, IC=0
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
VCE(SAT)
VBE(ON)
hFE
IC=3A, IB=300mA
VCE=5V, IC=500mA
IC=500mA, VCE=5V
VCE=5V, IC=500mA
1
V
100
200
Current gain bandwidth product
fT
3
MHZ
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R203-013.G
www.unisonic.com.tw
2SD880
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
3 of 4
QW-R203-013.G
www.unisonic.com.tw
2SD880
NPN SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
QW-R203-013.G
www.unisonic.com.tw
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