2SD882 [WEITRON]
PNP / NPN Epitaxial Planar Transistors; PNP / NPN外延平面晶体管
| 型号： | 2SD882 |
| 厂家： | 
WEITRON TECHNOLOGY |
| 描述： | PNP / NPN Epitaxial Planar Transistors |
| 文件： | 总5页 (文件大小：689K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SB772
2SD882
PNP / NPN Epitaxial Planar Transistors
TO-126
1.EMITTER
2.COLLECTOR
3.BASE
P b
Lead(Pb)-Free
1
2
3
ABSOLUTE MAXIMUM RATINGS (T =25°C)
a
Rating
Symbol
PNP/2SB772
Unit
NPN/2SD882
V
-30
30
Vdc
Collector-Emitter Voltage
CEO
V
-40
-5.0
-3.0
-7.0
40
5.0
3.0
7.0
Vdc
Vdc
Adc
Adc
Adc
W
Collector-Base Voltage
Emitter-Base Voltage
CBO
V
EBO
I
Collector Current(DC)
Collector Current(Pulse)(1)
Base Current
C(DC)
I
C(Pulse)
I
B(Pulse)
-0.6
0.6
P
1.0
10
Total Cevice Disspation Ta=25°C
Total Cevice Disspation Tc=25°C
Junction Temperature
Storage, Temperture
D
P
W
D
T
j
150
-55 to +150
°C
Tstg
°C
Device Marking
2SB772=B772 , 2SD882=D882
ELECTORICAL CHARACTERISTICS
Characteristics
Symbol
Min
Max
Unit
V
-30/30
-
Vdc
Vdc
Collect-Emitter Breakdown Voltage (I =-10/10 mAdc, I =0)
(BR)CEO
(BR)CBO
C
B
Collect-Base Breakdown Voltage (I =-100/100 µAdc, I =0)
V
-40/40
-
C
E
Emitter-Base Breakdown Voltage (I =-100/100 µAdc, I =0)
V
-5.0/5.0
-
Vdc
E
C
(BR)EBO
Collector Cutoff Current (V =-30/30 Vdc, I =0)
I
-
-
-
-1.0/1.0
-1.0/1.0
-1.0/1.0
µAdc
µAdc
µAdc
CE
B
CEO
Collector Cutoff Current (V =-40/40 Vdc, I =0)
I
CB
E
CBO
Emitter Cutoff Current (V =-6.0/6.0Vdc, I =0)
I
EB
C
EBO
NOTE: 1.PW ≤ 350us, duty cycle ≤ 2%
WEITRON
http://www.weitron.com.tw
1/5
Rev.B 14-Aug-07
2SB772
2SD882
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted) (Countinued)
A
Max
Characteristics
Symbol
Min
TYP
Unit
ON CHARACTERISTICS
DC Current Gain
(I = -1.0/1.0 Adc,V
C
h
-
-
400
-
(1)
FE
60
-
-
)
CE=-2.0/2.0Vdc
DC Current Gain
(I = -100/100 mAdc,V = -2.0/2.0 Vdc)
C
h
32
-
(2)
FE
CE
Collector-Emitter Saturation Voltage
(I = -2.0/2.0 Adc, I = -0.2/0.2mAdc)
-
V
-0.5/0.5
Vdc
Vdc
CE(sat)
BE(sat)
C
B
Base-Emitter Saturation Voltage
(I = -2.0/2.0 Adc, I = -0.2/0.2mAdc)
-
-
-
-2.0/2.0
V
C
B
Current-Gain-Bandwidth Product
(I = -0.1/0.1 mAdc,V =-5.0/5.0 Vdc, f=10MHz)
80/90
f
T
-
MHz
C
CE
Classification of h
FE(1)
R
Y
Rank
O
GR
200-400
Range
100-200
160-320
60-120
WEITRON
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2SB772
2SD882
F1. Total Power Dissipation VS.
Ambient Temperature
F.2 Derating Curve for All Types
NOTE
1. Aluminum heat sink
of 1.0 mm thickness.
2. With no insulator film.
3. With silicon compound.
10
100
S
/
b
8
6
80
60
l
i
m
D
i
i
i
t
e
n
s
f
i
d
s
n
i
t
e
i
p
h
a
e
a
t
t
i
s
o
i
n
1
k
n
40
20
0
0
0
4
2
c
l
2
m
i
m
2
5
2
c
m
i
t
9
e
2
c
m
d
Without heat sink
0
50
100
0
50
100
150
150
°
Ta-Amient Temperature- C
Tc,Case Temperature(°C)
F3. Thermal Resistance VS.
Pulse Width
F4. Safe Operating Areas
<
PW 10 ms
−
−
<
10
(
Duty Cycle 50 %
)
P
W
Ic(max),Pulse
V
CE=10V
0
1
=
1
0
.
1
1
m
m
I =1.0A
0
m
C
Duty=0.001
S
°
S
0
Ic(max),DC
D
S
u
30
10
3
1
s
i
s
s
m
i
i
p
L
(
a
d
i
S
t
i
i
o
n
n
t
e
g
l
e
n
o
n
s
v
r
/
e
b
p
L
e
i
t
m
i
t
i
3
1
i
t
e
0.3
0.1
e
d
p
u
l
s
e
)
NOTE
1. Tc=25 C
2. Curves must be derated
linearly with increase of
temperature and Duty Cycle.
0.03
0.01
0.3
0.1
1
3
6
10
30
60 100
0.3
1
3
10
30
100 300 1000
V
-Collector to Emitter Voltage-V
CE
PW-Pulse Width-ms
2SB772
F5. Collector Current VS. Collector
To Emitter Voltage
2SD882
F6. Collector Current VS. Collector
To Emitter Voltage
-2.0
-1.6
-1.2
Pulse Test
2.0
Pulse Test
IB=-10mA
IB=-9mA
IB=10mA
IB=9mA
1.6
1.2
IB=-8MA
IB=-7mA
IB=8MA
IB=7mA
IB=-6mA
IB=-5mA
IB=6mA
IB=5mA
-0.8
-0.4
0
IB=-4mA
0.8
0.4
0
IB=4mA
IB=-3mA
IB=-2mA
IB=-1mA
IB=3mA
IB=2mA
IB=1mA
0
-4
-8
-12
-16
-20
0
4
8
12
16
20
vCE
-Collector-Emitter Voltage(V)
vCE
-Collector-Emitter Voltage(V)
WEITRON
http://www.weitron.com.tw
2SB772
2SD882
F8.
-I
,
c
VCE(sat), VBE(sat)
,
FE
F7. h
VBE-I
c
10
6
1000
600
VCE=2.0V
Puse Test
3
2SB772
2SB772
V
BE(sat)
300
1
0.6
h
FE
2
8
8
D
S
2
100
60
2SD882
0.3
0.1
30
0.06
0.03
2SB772
2SD882
10
6
VBE
0.01
0.006
0.003
2
8
8
D
S
2
3
1
0.001 0.003 0.01 0.03
0.001
0.003 0.01 0.03 0.1
0.3
1
3
10
0.1 0.3
1
3
10
Ic-Collector Current(A)
Ic-Collector Current(A)
Cob-VCB
,
Cib-VCE
F10.
F9. fT - I
c
1000
f=1.0MHz
IE =0(Cob)
IC=0(Cib)
V
=5.0V
CE
Forecd air
Cooling
(with heat sink)
300
2
S
D
8
300
100
8
2
Cib
2
S
100
60
B
7
2SB772
7
2
2
S
B
7
7
2
2SD882
Cob
30
2
S
D
8
8
2
30
10
10
6
3
3
1
1
3
6
10
30
60
0.01
0.03
0.1
0.3
1
VCB-Collector to Base Voltage(V)
VEB-Emitter to Base Voltage(V)
Ic-Collector Current(A)
WEITRON
http://www.weitron.com.tw
2SB772
2SD882
TO-126 Outline Dimensions
unit:mm
A
G
B
TO-126
MAX
2.900
1.500
0.860
1.370
0.600
7.800
11.000
Min
2.500
1.100
0.660
1.170
0.450
7.400
10.600
Dim
A
B
C
D
φ
E
D
G
H
J
K
L
M
S
2.290TYP
4.480
15.300
2.100
3.900
4.680
15.700
2.300
4.100
3.200
C
J
E
K
φ
3.000
WEITRON
http://www.weitron.com.tw
相关型号：
2SD882-BP
Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
MCC
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