2SD882-126_15 [KEXIN]
NPN Transistors;
| 型号： | 2SD882-126_15 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors |
| 文件： | 总2页 (文件大小：917K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DIP Type
Transistors
NPN Tr
ansistors
2SD882
TO-126
Unit:mm
8.00± 0.30
3.25± 0.20
Features
Excellent hFE linearity and high hFE
hFE = 60 to 400 (VCE = 2 V, IC = 1 A)
ø3.20± 0.10
(1.00)
(0.50)
0.75± 0.10
1.75± 0.20
1.60± 0.10
0.75± 0.10
1
2
3
#1
+0.10
–0.05
0.50
2.28TYP
2.28TYP
[2.28±0.20]
[2.28±0.20]
1. Base
2. Collector
3. Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current to Continuous
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
40
30
6
V
V
3
A
Pc
1
W
Junction Temperature
TJ
150
Storage Temperature
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditions
Ic=100uA ,IE=0
Min
40
30
6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
VCBO
VCEO
VEBO
ICBO
ICEO
IEBO
IC= 10 mA , IB=0
IE= 100 uA ,IC=0
VCB=40 V , IE=0
VCE=30 V , IB=0
VEB=6V , IC=0
V
V
1
10
1
uA
uA
uA
Collector cut-off current
Emitter cut-off current
VCE= 2V, IC= 1A
VCE=2V, IC= 100mA
IC=2A, IB= 0.2A
IC=2A, IB= 0.2A
60
32
400
DC current gain
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
f T
0.5
1.5
V
V
VCE=5 V, IC=0.1mA,f = 10MHz
50
MHz
■ Classification of hfe(1)
Type
2SD882-R
60-120
2SD882-Q
100-200
2SD882-P
160-320
2SD882-E
200-400
Range
1
www.kexin.com.cn
DIP Type
Transistors
NPN Tr
ansistors
2SD882
■ Typical Characterisitics
2
www.kexin.com.cn
相关型号：
2SD882-BP
Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
MCC
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