2SD882 [TGS]
It is intented for use in power amplifier and switching applications.; 据intented在功率放大器和开关应用。
| 型号： | 2SD882 |
| 厂家： | 
Tiger Electronic Co.,Ltd |
| 描述： | It is intented for use in power amplifier and switching applications. |
| 文件： | 总1页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TIGER ELECTRONIC CO.,LTD
2SD882 / 2SB772
DESCRIPTION
It is intented for use in power
amplifier and switching applications.
O
ABSOLUTE MAXIMUM RATINGS
( Ta = 25 C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Value Unit
Symbol
VCBO
40
V
VCEO
VEBO
IC
30
5
V
V
3.0
0.3
10
A
Base Current
IB
A
Total Dissipation at
Ptot
Tj
W
oC
150
Max. Operating Junction Temperature
Storage Temperature
TO-126
Tstg
-55~150 oC
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Symbol
Test Conditions
VCB=30V, IE=0
Min.
Typ.
Max. Unit
ICEO
0.01
0.01
mA
mA
V
IEBO
VCEO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
VEB=3V, IC=0
Collector-Emitter Sustaining Voltage
DC Current Gain
IC=10mA, IB=0
30
30
60
150
160
0.3
1.0
90
VCE=2V, IC=20mA
VCE=2V, IC=1.0A
IC=2A,IB=200mA
IC=2A,IB=200mA
VCE=5V,IC=100mA
400
0.5
2.0
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
V
V
MHz
相关型号：
2SD882-BP
Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
MCC
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