2N7002L [UTC]
60V, 115mA, N-CHANNEL MOSFET; 60V ， 115毫安，N沟道MOSFET
| 型号： | 2N7002L |
| 厂家： | 
Unisonic Technologies |
| 描述： | 60V, 115mA, N-CHANNEL MOSFET |
| 文件： | 总3页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2N7002L
Preliminary
Power MOSFET
60V, 115mA, N-CHANNEL
MOSFET
DESCRIPTION
3
The UTC 2N7002L uses advanced technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in
PWM applications.
1
2
FEATURES
SOT-23-3
(JEDEC TO-236)
* RDS(ON) = 7.5Ω @VGS = 10 V
* Low Reverse Transfer Capacitance ( CRSS = typical 5 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
3. Drain
2.Gate
1.Source
ORDERING INFORMATION
Pin Assignment
Ordering Number
2N7002LG-AE2-R
Package
Packing
1
2
3
SOT-23-3
S
G
D
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
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QW-R502-284.c
2N7002L
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (Ta =25°C)
PARAMETER SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
VDGR
VGSS
V
V
V
60
60
Drain-Gate Voltage (RG=1.0MΩ)
Continuous
±20
Gate-Source Voltage
Drain Current
V
VGSM
±40
Non-repetitive (tP≦50μs)
Continuous(TC=25°C)
Pulse(Note 2)
±115
±800
ID
mA
Power Dissipation (Ta = 25°C)
Derate above 25°C
225
mW
mW /°C
°C
PD
1.8
Junction Temperature
Storage Temperature
TJ
+150
TSTG
°C
-55 ~ +150
Note:1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Pulse width≦300μs, Duty cycle≦2%
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
556
UNIT
°C/W
Junction to Ambient
θJA
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
ON CHARACTERISTICS(Note)
Gate Threshold Voltage
BVDSS
IDSS
V
V
V
V
GS=0V, ID=10µA
60
µA
nA
DS=60V, VGS=0V (TJ=25°C)
GS=±20V, VDS=0V
1.0
IGSS
±100
VGS(TH)
VDS(ON)
ID(ON)
V
V
VDS=VGS, ID=250 µA
1.0
500
80
2.5
3.75
0.375
VGS=10V, ID=500 mA
GS=5V, ID=50mA
Drain-Source On-State Voltage
On-State Drain Current
V
VDS≧2.0VDS(ON), VGS=10V
VGS=10V, ID=500mA(TC=25°C)
VGS=5V, ID=50mA(TC=25°C)
VDS≧2.0VDS(ON), ID=200mA
mA
7.5
7.5
Static Drain-Source On-Resistance
RDS(ON)
Ω
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
gFS
mS
CISS
COSS
CRSS
50
25
pF
pF
pF
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
5.0
tD(ON)
VDD=25V, ID=500mA,
20
40
ns
ns
VGEN=10V, RG=25Ω, RL=50Ω
Turn-OFF Delay Time
tD(OFF)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Diode Forward Voltage
VSD
IS
IS=115mA, VGS=0V
1.5
115
800
V
Maximum Body-Diode Continuous Current
Source Current Pulsed
mA
mA
ISM
Note: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%.
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R502-284.c
www.unisonic.com.tw
2N7002L
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-284.c
www.unisonic.com.tw
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