FMMT596 [TYSEMI]
SOT23 PNP silicon planar; SOT23封装PNP硅平面
| 型号： | FMMT596 |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | SOT23 PNP silicon planar |
| 文件： | 总2页 (文件大小：548K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Product specification
FMMT596
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
Features
SOT23 PNP silicon planar
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
ICM
Rating
-220
Unit
V
V
-200
-5
V
Peak collector current
Collector current
-1
A
IC
-0.3
A
Base current
IB
-200
mA
mW
Power dissipation
Ptot
500
Operating and storage temperature range
Tj,Tstg
-55 to +150
http://www.twtysemi.com
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4008-318-123
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Product specification
FMMT596
Electrical Characteristics Ta = 25
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Testconditons
Min
-220
-200
-5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
IC=-100ìA
IC=-10mA
IE=-100ìA
VCB=-200V
VCE=-200V
VEB=-4V
V
V
-100
-100
-100
-0.2
nA
nA
nA
V
Collector-Emitter Cut-Off Current
Emitter cut-off current
ICES
IEBO
IC=-100mA, IB=-10mA
IC=-250mA, IB=-25mA
IC=-250mA, IB=-25mA
IC=-250mA,VCE=-10V
IC=-1mA, VCE=-10V
Collector-emitter saturation voltage *
VCE(sat)
-0.35
-1.0
V
Base-emitter saturation voltage *
Base-emitter voltage *
VBE(sat)
VBE(ON)
V
-0.9
V
100
100
85
IC=-100mA,VCE=-10V*
IC=-250mA,VCE=-10V*
IC=-400mA,VCE=-10V*
IC=-50mA,VCE=-10V,f=100MHz
VCB=-10V,f=1MHz
Static Forward Current Transfer Ratio
hFE
300
10
35
Current-gain-bandwidth product
Output capacitance
fT
150
MHz
pF
Cobo
* Pulse test: tp = 300 ìs; d
0.02.
Marking
Marking
596
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sales@twtysemi.com
4008-318-123
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