DMN2300U [TYSEMI]
20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 ESD Protected Gate 2kV; 20V N沟道增强型MOSFET ，SOT23封装的ESD保护2kV的门
| 型号： | DMN2300U |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | 20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 ESD Protected Gate 2kV |
| 文件： | 总3页 (文件大小：200K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
DMN2300U
20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23
Product Summary
Features and Benefits
•
•
•
•
•
•
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On resistance <200mΩ
Low Gate Threshold Voltage
Fast Switching Speed
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
ESD Protected Gate 2kV
V(BR)DSS
RDS(on)
ID Max (Note 5)
1.40A @ TA = 25°C
1.20A @ TA = 25°C
1.0A @ TA = 25°C
175mΩ @ VGS = 4.5V
240mΩ @ VGS = 2.5V
360mΩ @ VGS = 1.8V
20V
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
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Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin
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Weight: 0.08 grams (approximate)
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Load switch
Drain
SOT23
D
Body
Diode
Gate
Gate
Protection
Diode
Source
S
G
Top View
Equivalent Circuit
Top View
ESD PROTECTED TO 2kV
Ordering Information (Note 3)
Part Number
DMN2300U-7
Marking
N2U
Reel size (inches)
Tape width (mm)
Quantity per reel
7
8
3000
Notes:
1. No purposefully added lead
Marking Information
N2U = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
N2U
M = Month (ex: 9 = September)
Date Code Key
Year
2011
2012
2013
2014
2015
2016
2017
Code
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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Product specification
DMN2300U
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
20
Unit
V
Gate-Source Voltage
±8
V
VGSS
TA = 25°C (Note 5)
Steady
State
1.40
1.01
1.24
Continuous Drain Current
A
A
TA = 85°C (Note 5)
TA = 25°C (Note 4)
ID
Pulsed Drain Current (Note 6)
11
IDM
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
0.43
0.55
288
228
Unit
W
W
°C/W
°C/W
°C
(Note 4)
(Note 5)
(Note 4)
(Note 5)
Power Dissipation
PD
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
RθJA
-55 to +150
TJ, TSTG
Notes:
2. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
3. Device mounted on 25mm X 25mm square copper plate with FR-4 substrate PC board, 2oz copper
4. Device mounted on minimum recommended pad layout test board, 10
μs pulse duty cycle = 1%.
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Product specification
DMN2300U
1
r(t) @ D=0.5
r(t) @ D=0.3
r(t) @ D=0.9
r(t) @ D=0.7
0.1
r(t) @ D=0.1
r(t) @ D=0.05
r(t) @ D=0.01
r(t) @ D=0.01
0.01
0.001
r(t) @ D=0.005
R
R
(t) = r(t)*R
= 220C/W
θ
JA
JA
θJA
θ
Duty Cycle, D = t1/t2
r(t) @ D=Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Fig. 3 Transient Thermal Resistance
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
20
-
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = 10μA
VDS = 20V, VGS = 0V
VGS = ±8V, VDS = 0V
1
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
μA
μA
-
10
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.45
-
-
0.95
175
240
360
-
V
VGS(th)
VDS = VGS, ID = 250μA
V
GS = 4.5V, ID = 300mA
Static Drain-Source On-Resistance
RDS (ON)
mΩ
VGS = 2.5V, ID = 250mA
VGS = 1.8V, ID = 100mA
VDS = 3V, ID = 30mA
VGS = 0V, IS = 300mA
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
40
-
-
mS
V
|Yfs|
VSD
0.7
1.2
-
-
-
-
-
-
-
-
-
-
-
64.3
6.1
4.5
70
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1MHz
1.6
0.2
0.2
3.5
2.8
38
Total Gate Charge
nC
nC
nC
ns
ns
ns
ns
Qg
V
GS = 4.5V, VDS = 15V,
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
tD(on)
tr
ID = 1A
Turn-On Delay Time
Turn-On Rise Time
VDS = 10V, ID = 1A
VGS = 10V, RG = 6Ω
Turn-Off Delay Time
tD(off)
tf
13
Turn-Off Fall Time
Notes: 5. Short duration pulse test used to minimize self-heating effect.
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