DMN2300UFL4_15 [DIODES]
20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET;
| 型号： | DMN2300UFL4_15 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：236K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN2300UFL4
20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Footprint of Just 1.3 mm2
ID max
TA = +25°C
•
•
•
•
•
•
•
•
•
•
V(BR)DSS
Max RDS(on)
Ultra Low Profile Package - 0.4mm Profile
On Resistance <200mΩ
(Note 6)
2.11A
1.83A
1.51A
1.29A
Low Gate Threshold Voltage
195mΩ @ VGS = 4.5V
260mΩ @ VGS = 2.5V
380mΩ @ VGS = 1.8V
520mΩ @ VGS = 1.5V
Fast Switching Speed
20V
Ultra-Small Surface Mount Package
ESD Protected Gate 2KV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
•
•
Case: X2-DFN1310-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu Annealed over Copper Leadframe.
•
•
•
Load switch
e4
Solderable per MIL-STD-202, Method 208
D1
D2
G1
G2
Gate
Gate
Protection
Diode
Protection
Diode
S1
S2
ESD PROTECTED TO 2kV
Device Symbol
Top View
Pin-Out
Ordering Information (Note 4)
Part Number
DMN2300UFL4-7
Marking
23N
Reel size (inches)
Tape width (mm)
Quantity per reel
3000
7
8
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
23N = Product Type Marking Code
23N
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September 2014
© Diodes Incorporated
DMN2300UFL4
Datasheet Number: DS35946 Rev. 2 - 2
DMN2300UFL4
Maximum Ratings @TA = +25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
20
Unit
V
Gate-Source Voltage
±8
V
VGSS
Steady
State
TA = +25°C
TA = +85°C
2.11
1.19
Continuous Drain Current (Note 6)
Pulsed Drain Current (Note 7)
A
A
ID
6.0
IDM
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
0.53
1.39
238
90
Unit
(Note 5)
(Note 6)
(Note 5)
(Note 6)
Power Dissipation
W
PD
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
°C/W
°C
RθJA
-55 to +150
TJ, TSTG
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%.
100
Single Pulse
90
80
70
60
R
R
T
= 230°C/W
θJA
= r * R
θJA(t)
(t)
θJA
- T = P * R
J
A
θJA(t)
50
40
30
20
10
0
0.0001 0.001
0.01
0.1
1
10
100
t1, PULSE DURATION TIME (sec)
Fig. 1 Single Pulse Maximum Power Dissipation
1
D = 0.7
D = 0.5
D = 0.3
D = 0.9
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
RθJA(t) = r(t) * RθJA
RθJA = 230°C/W
Duty Cycle, D = t1/ t2
D = 0.005
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIMES (sec)
Fig. 2 Transient Thermal Resistance
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© Diodes Incorporated
DMN2300UFL4
Datasheet Number: DS35946 Rev. 2 - 2
DMN2300UFL4
Electrical Characteristics @TA = +25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
20
-
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = 10μA
1
µA
µA
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
VDS = 20V, VGS = 0V
VGS = ±8V, VDS = 0V
-
10
IGSS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
0.45
-
-
-
0.95
195
260
380
520
-
V
VGS(th)
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 300mA
VGS = 2.5V, ID = 250mA
VGS = 1.8V, ID = 100mA
VGS = 1.5V, ID = 50mA
VDS = 3V, ID = 30mA
-
-
Static Drain-Source On-Resistance
mΩ
RDS (ON)
-
-
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
40
-
-
mS
V
|Yfs|
VSD
0.7
1.2
VGS = 0V, IS = 300mA
-
-
-
-
-
-
-
-
-
-
-
64.3
6.1
4.5
70
128.6
12.2
9.0
140
3.2
0.4
0.4
10
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Ciss
Coss
Crss
Rg
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1MHz
1.6
0.2
0.2
3.5
2.8
38
Total Gate Charge
Qg
VGS = 4.5V, VDS = 15V,
ID = 1A
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
tD(on)
tr
Turn-On Delay Time
Turn-On Rise Time
10
VDS = 10V, ID = 1A
VGS = 10V, RG = 6Ω
60
Turn-Off Delay Time
Turn-Off Fall Time
tD(off)
tf
13
25
Note:
8. Short duration pulse test used to minimize self-heating effect.
2.0
1.5
2.0
1.5
V
= 4.5V
GS
V
= 5V
DS
V
= 2.5V
GS
V
= 2.0V
GS
V
= 1.8V
GS
V
= 1.5V
GS
1.0
1.0
0.5
T
A
= 150°C
0.5
0
T
= 85°C
A
T
= 125°C
A
T
= 25°C
V
= 1.2V
A
GS
T
= -55°C
A
0
0
0
1
2
3
4
5
0.5
1
1.5
2
2.5
3
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 4 Typical Transfer Characteristic
Fig. 3 Typical Output Characteristic
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© Diodes Incorporated
DMN2300UFL4
Datasheet Number: DS35946 Rev. 2 - 2
DMN2300UFL4
0.4
0.3
0.8
0.6
V
= 4.5V
GS
0.4
0.2
V
V
= 2.5V
= 4.5V
GS
T
T
= 150°C
T
= 125°C
A
A
GS
0.2
0
0.1
0
= 85°C
= 25°C
A
T
T
A
= -55°C
A
0
0.4
0.8
1.2
1.6
2
0
0.25 0.5 0.75
1
1.25 1.5 1.75
2
ID, DRAIN-SOURCE CURRENT (A)
Fig. 5 Typical On-Resistance
vs. Drain Current and Gate Voltage
ID, DRAIN CURRENT (A)
Fig. 6 Typical On-Resistance
vs. Drain Current and Temperature
1.6
1.4
0.8
0.6
V
= 4.5V
GS
= 1.0A
I
D
V
= 2.5V
GS
= 500mA
I
D
1.2
1.0
0.4
V
I
= 2.5V
GS
= 500mA
D
0.2
0
0.8
0.6
V
= 4.5V
GS
= 1.0A
I
D
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 On-Resistance Variation with Temperature
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 8 On-Resistance Variation with Temperature
2.0
1.6
1.2
1.0
I
= 1mA
D
0.8
0.6
T
= 25°C
1.2
0.8
A
I
= 250µA
D
0.4
0.4
0
0.2
0
-50 -25
0
25
50
75 100 125 150
0
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 10 Diode Forward Voltage vs. Current
TA, AMBIENT TEMPERATURE (°C)
Fig. 9 Gate Threshold Variation vs. Ambient Temperature
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DMN2300UFL4
Datasheet Number: DS35946 Rev. 2 - 2
DMN2300UFL4
1,000
100
100,000
10,000
T
= 125°C
A
T
= 150°C
A
T
= 125°C
A
1,000
T
= 85°C
= 25°C
A
T
= 85°C
A
T
A
100
10
1
10
T
= 25°C
A
T
= -55°C
A
T
= -55°C
A
1
2
4
6
8
10
12
2
4
6
8
10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
Fig.12 Leakage Current vs. Gate-Source Voltage
Fig. 11 Typical Leakage Current
vs. Drain-Source Voltage
8
6
V
= 15V
= 1A
DS
I
D
4
2
0
0
0.5
Qg, TOTAL GATE CHARGE (nC)
Fig. 13 Gate-Charge Characteristics
1
1.5
2
2.5
3
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© Diodes Incorporated
DMN2300UFL4
Datasheet Number: DS35946 Rev. 2 - 2
DMN2300UFL4
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
X2-DFN1310-6
Dim Min Max Typ
A
0.40
0.05 0.02
0.13
0
A1
A
A1
A3
b
D
d
A3
Z
0.10 0.20 0.15
1.25 1.38 1.30
B
D2
0.25
D2
E
e
0.30 0.50 0.40
0.95 1.075 1.00
0.35
R
0
.
1
5
0
E2
E2
f
L
0.30 0.50 0.40
0.10
0.20 0.30 0.25
0.05
E
d
L
Z
All Dimensions in mm
e
d
z
f
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
G2
X2
Dimensions
Value (in mm)
0.16
G1
G2
G3
X1
X2
Y1
Y2
a
Y2
G1
0.17
0.15
0.52
0.20
0.52
0.375
0.09
b
Y1
b
0.06
X1
a
G3
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© Diodes Incorporated
DMN2300UFL4
Datasheet Number: DS35946 Rev. 2 - 2
DMN2300UFL4
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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© Diodes Incorporated
DMN2300UFL4
Datasheet Number: DS35946 Rev. 2 - 2
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