DMN2300UFD [DIODES]
20V N-CHANNEL ENHANCEMENT MODE MOSFET; 20V N沟道增强型MOSFET
| 型号： | DMN2300UFD |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 20V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总7页 (文件大小：280K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
DMN2300UFD
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
•
•
•
Low Gate Threshold Voltage
Fast Switching Speed
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
ESD Protected Gate 2KV
ID max
TA = 25°C
(Notes 4)
1.73A
V(BR)DSS
RDS(on) Max
200mΩ @ VGS = 4.5V
260mΩ @ VGS = 2.5V
400mΩ @ VGS = 1.8V
500mΩ @ VGS = 1.5V
1.50A
1.27A
1.15A
20V
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
•
•
Case: X1-DFN1212-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ۛ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
•
Load switch
•
Weight: 0.005 grams (approximate)
Drain
X1-DFN1212-3
Body
Diode
Gate
Gate
Protection
Diode
Source
Top View
Bottom View
Equivalent Circuit
Pin-out Top view
Ordering Information (Note 3)
Part Number
DMN2300UFD-7
Marking
KS2
Reel size (inches)
Tape width (mm)
Quantity per reel
7
8
3000
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
KS2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
2011
2012
2013
2014
2015
2016
2017
Code
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
1 of 7
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September 2011
© Diodes Incorporated
DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2
A Product Line of
Diodes Incorporated
DMN2300UFD
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
20
Unit
V
Gate-Source Voltage
±8
V
VGSS
1.73
1.34
1.21
6.0
TA = 25°C (Note 4)
Steady
State
Continuous Drain Current
A
A
TA = 85°C (Note 4)
TA = 25°C (Note 5)
ID
Pulsed Drain Current (Note 6)
IDM
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
0.96
0.47
130
265
Unit
W
W
°C/W
°C/W
°C
(Note 4)
(Note 5)
(Note 4)
(Note 5)
Power Dissipation
PD
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
RθJA
-55 to +150
TJ, TSTG
Notes:
4. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of 2oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
5. Same as note 4, except the device is mounted on minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%.
Thermal Characteristics
10
9
10
R
DS(ON)
I
(A) @P =1ms
W
Single Pulse
D
Limited
R
R
T
= 136
°
C/W
θ
JA
(t) = R *r(t)
θJA
θ
JA
- T = P*R
8
J
A θJA
1
7
6
5
0.1
4
3
0.01
2
T
T
= 150°C
J(MAX)
I
(A) @
= 25°C
D
A
1
P
=10µs
Single Pulse
W
0.001
0
0.1
1
10
100
0.0001 0.001 0.01 0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 2 SOA, Safe Operation Area
t1, PULSE DURATION TIME (sec)
Fig. 1 Single Pulse Maximum Power Dissipation
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September 2011
© Diodes Incorporated
DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2
A Product Line of
Diodes Incorporated
DMN2300UFD
1
D = 0.7
D = 0.5
D = 0.3
D = 0.9
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
0.01
R
R
(t) = r(t) * R
θJA
= 136°C/W
D = 0.005
θ
JA
JA
θ
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIMES (sec)
Fig. 3 Transient Thermal Resistance
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
20
-
-
-
-
-
1
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
μA
μA
VDS = 20V, VGS = 0V
VGS = ±8V, VDS = 0V
-
±10
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.45
-
-
-
0.95
200
260
400
500
-
V
VGS(th)
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 900mA
VGS = 2.5V, ID = 800mA
VGS = 1.8V, ID = 700mA
VGS = 1.5V, ID = 200mA
VDS = 3V, ID = 300mA
VGS = 0V, IS = 300mA
Static Drain-Source On-Resistance
RDS (ON)
mΩ
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
40
-
-
mS
V
|Yfs|
VSD
0.7
1.2
-
-
-
-
-
-
-
-
-
-
-
67.62
9.74
-
-
-
-
2
-
-
-
-
-
-
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
7.58
Reverse Transfer Capacitance
Gate Resistance
68.51
0.89
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (Note 8)
Gate-Source Charge
Gate-Drain Charge
nC
nC
nC
ns
ns
ns
ns
Qg
VGS = 4.5V, VDS = 15V,
ID = 1A
0.14
Qgs
Qgd
tD(on)
tr
0.16
4.92
Turn-On Delay Time
6.93
Turn-On Rise Time
VDS = 10V, ID = 1A
VGS = 10V, RG = 6Ω
21.71
10.62
Turn-Off Delay Time
tD(off)
tf
Turn-Off Fall Time
Notes:
7. Short duration pulse test used to minimize self-heating effect.
8. Guarantee by design.
3 of 7
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September 2011
© Diodes Incorporated
DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2
A Product Line of
Diodes Incorporated
DMN2300UFD
2.0
1.5
2.0
1.5
V
= 4.5V
GS
V = 5V
DS
V
= 2.5V
GS
V
= 2.0V
GS
V
= 1.8V
GS
V
= 1.5V
GS
1.0
1.0
T
A
= 150°C
0.5
0
0.5
0
T
= 85°C
A
T
= 125°C
A
T
= 25°C
V
= 1.2V
A
GS
T
= -55°C
A
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 5 Typical Transfer Characteristic
Fig. 4 Typical Output Characteristic
1
0.6
0.5
V
= 1.5V
GS
V
= 4.5V
GS
0.8
0.4
0.3
0.2
0.6
0.4
0.2
T
= 125°C
T
T
= 150°C
= 85°C
A
A
V
= 1.8V
GS
V
A
T
= 25°C
= 2.5V
A
GS
0.1
0
T
= -55°C
A
V
= 4.5V
GS
0
0
0.2
0.4
ID, DRAIN CURRENT (A)
Fig. 7 Typical On-Resistance
vs. Drain Current and Temperature
0.6
0.8
1
0
0.4
0.8
1.2
1.6
2
ID, DRAIN-SOURCE CURRENT (A)
Fig. 6 Typical On-Resistance
vs. Drain Current and Gate Voltage
0.6
0.5
0.6
0.5
T
= 150°C
A
V
= 1.5V
V
= 1.8V
GS
GS
C
°
5
2
1
=
T
T
= 150°C
= 85°C
A
T
= 125°C
A
0.4
0.3
0.2
0.4
0.3
0.2
T
T
A
T
= -55°C
A
= 25°C
A
T
= -55°C
A
0.1
0
0.1
0
0
0.2
0.4
ID, DRAIN CURRENT (A)
Fig. 9 Typical On-Resistance
vs. Drain Current and Temperature
0.6
0.8
1
0
0.2
0.4
0.6
0.8
1
ID, DRAIN CURRENT (A)
Fig. 8 Typical On-Resistance
vs. Drain Current and Temperature
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September 2011
© Diodes Incorporated
DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2
A Product Line of
Diodes Incorporated
DMN2300UFD
1.7
1.5
1.3
1.1
0.9
0.7
0.5
0.6
V
I
= 2.5V
GS
= 500mA
D
0.5
0.4
0.3
V
= 4.5V
GS
V
= 1.8V
I
= 1.0A
GS
D
I
= 100mA
D
V
I
= 1.5V
GS
= 50mA
D
V
= 1.8V
GS
I
= 100mA
D
V
I
= 1.5V
GS
= 50mA
D
0.2
V
= 4.5V
GS
I
= 1.0A
D
V
= 2.5V
0.1
0
GS
I
= 500mA
D
-50 -25
0
25
TA, AMBIENT TEMPERATURE (°C)
Fig. 10 On-Resistance Variation with Temperature
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 11 On-Resistance Variation with Temperature
1.2
2.0
1.6
1.0
I
= 1mA
D
0.8
0.6
T
= 25°C
1.2
0.8
A
I
= 250µA
D
0.4
0.4
0
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
-50 -25
0
25
50
75 100 125 150
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 13 Diode Forward Voltage vs. Current
TA, AMBIENT TEMPERATURE (°C)
Fig. 12 Gate Threshold Variation vs. Ambient Temperature
1,000
100
10
100,000
10,000
T
= 125°C
A
T
= 150°C
A
T
= 125°C
A
1,000
T
= 85°C
= 25°C
A
T
= 85°C
A
T
A
100
10
1
T
= 25°C
A
T
= -55°C
A
T
= -55°C
A
1
2
4
6
8
10 12 14 16 18 20
2
4
6
8
10
12
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 14 Typical Leakage Current
vs. Drain-Source Voltage
VGS, GATE-SOURCE VOLTAGE (V)
Fig.15 Leakage Current vs. Gate-Source Voltage
5 of 7
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September 2011
© Diodes Incorporated
DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2
A Product Line of
Diodes Incorporated
DMN2300UFD
8
6
V
= 15V
= 1A
DS
I
D
4
2
0
0
0.5
1
1.5
2
2.5
3
Qg, TOTAL GATE CHARGE (nC)
Fig. 16 Gate-Charge Characteristics
Package Outline Dimensions
A
X1-DFN1212-3
Dim Min Max Typ
A3
A
A1
A3
b
0.47 0.53 0.50
A1
0
-
0.05 0.02
0.13
D
e
-
0.27 0.37 0.32
b1 0.17 0.27 0.22
D
E
e
1.15 1.25 1.20
1.15 1.25 1.20
b1
(2x)
-
-
0.80
E
L
0.25 0.35 0.30
All Dimensions in mm
L
b
Suggested Pad Layout
X
Y
Dimensions
Value (in mm)
0.80
C
X
X1
Y
0.42
0.32
0.50
X1
(2x)
Y2
Y1
Y2
0.50
1.50
Y1
(2x)
C
6 of 7
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September 2011
© Diodes Incorporated
DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2
A Product Line of
Diodes Incorporated
DMN2300UFD
MPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
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September 2011
© Diodes Incorporated
DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2
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