DMN2300UFB-7 [DIODES]
20V N-CHANNEL ENHANCEMENT MODE MOSFET; 20V N沟道增强型MOSFET
| 型号： | DMN2300UFB-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 20V N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总6页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
DMN2300UFB
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
•
•
•
•
•
•
Footprint of just 0.6mm2 – thirteen times smaller than SOT23
0.5mm profile – ideal for low profile applications
On resistance <200mΩ @ VGS = 4.5V
Low Gate Threshold Voltage
Fast Switching Speed
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
ESD Protected Gate 2KV
ID max
TA = 25°C
(Note 4)
1.30A
V(BR)DSS
RDS(on)
175mΩ @ VGS= 4.5V
240mΩ @ VGS= 2.5V
360mΩ @ VGS= 1.8V
20V
1.11A
0.91A
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
•
•
Case: DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Load switch
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
•
Weight: 0.001 grams (approximate)
Drain
DFN1006-3
Body
Diode
Gate
S
D
G
Gate
Protection
Diode
Source
ESD PROTECTED TO 2kV
Bottom View
Top View
Internal Schematic
Equivalent Circuit
Ordering Information (Note 3)
Part Number
DMN2300UFB-7
DMN2300UFB-7B
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
NI
NI
7
7
8
8
3,000
10,000
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMN2300UFB-7
DMN2300UFB-7B
NI
NI
NI = Product Type Marking Code
Top View
Dot Denotes
Drain Side
Top View
Bar Denotes Gate
and Source Side
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May 2011
© Diodes Incorporated
DMN2300UFB
Document number: DS35235 Rev. 1 - 2
A Product Line of
Diodes Incorporated
DMN2300UFB
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
20
Unit
V
Gate-Source Voltage
±8
V
VGSS
TA = 25°C (Note 4)
Steady
State
1.32
0.94
1.78
Continuous Drain Current
A
A
TA = 85°C (Note 4)
TA = 25°C (Note 5)
ID
Pulsed Drain Current (Note 6)
8
IDM
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 4)
Symbol
Value
0.468
1.2
Unit
W
PD
PD
Power Dissipation (Note 5)
W
Thermal Resistance, Junction to Ambient (Note 4)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
267
°C/W
°C/W
°C
RθJA
104
RθJA
-55 to +150
TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
20
-
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = 10μA
VDS = 20V, VGS = 0V
VGS = ±8V, VDS = 0V
1
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
μA
μA
-
10
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.45
-
0.95
175
240
360
-
V
VGS(th)
VDS = VGS, ID = 250μA
-
-
-
VGS = 4.5V, ID = 300mA
Static Drain-Source On-Resistance
-
-
RDS (ON)
mΩ
V
V
GS = 2.5V, ID = 250mA
GS = 1.8V, ID = 100mA
-
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
40
-
-
mS
V
|Yfs|
VSD
VDS = 3V, ID = 30mA
VGS = 0V, IS = 300mA
0.7
1.2
-
-
-
-
-
-
-
-
-
-
-
67.62
9.74
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
V
DS = 20V, VGS = 0V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1.0MHz
7.58
68.51
0.89
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
nC
nC
nC
ns
ns
ns
ns
Qg
V
GS = 4.5V, VDS = 10V,
0.14
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
tD(on)
tr
I
D = 1A
0.16
4.92
Turn-On Delay Time
Turn-On Rise Time
6.93
VDS = 10V, ID = 1A
GS = 4.5V, RG = 6Ω
21.71
10.62
V
Turn-Off Delay Time
Turn-Off Fall Time
tD(off)
tf
Notes:
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 25mm X 25mm square copper plate
6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
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May 2011
© Diodes Incorporated
DMN2300UFB
Document number: DS35235 Rev. 1 - 2
A Product Line of
Diodes Incorporated
DMN2300UFB
2.0
1.5
2.0
1.5
V
= 4.5V
GS
V = 5V
DS
V
= 2.5V
GS
V
= 2.0V
GS
V
= 1.8V
GS
V
= 1.5V
GS
1.0
1.0
T
A
= 150°C
0.5
0
0.5
0
T
= 85°C
A
T
= 125°C
A
T
= 25°C
V
= 1.2V
A
GS
T
= -55°C
A
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
Fig. 1 Typical Output Characteristic
0.4
0.3
0.8
0.6
V
= 4.5V
GS
0.4
0.2
V
V
= 2.5V
= 4.5V
GS
T
T
= 150°C
T
= 125°C
A
A
GS
0.2
0
0.1
0
= 85°C
= 25°C
A
T
T
A
= -55°C
A
0
0.4
0.8
1.2
1.6
2
0
0.25 0.5 0.75
1
1.25 1.5 1.75
2
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
1.6
1.4
0.8
0.6
0.4
V
= 4.5V
GS
I
= 1.0A
D
V
= 2.5V
GS
I
= 500mA
D
1.2
1.0
V
I
= 2.5V
GS
= 500mA
D
0.2
0
0.8
0.6
V
= 4.5V
GS
I
= 1.0A
D
-50 -25
0
25
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
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May 2011
© Diodes Incorporated
DMN2300UFB
Document number: DS35235 Rev. 1 - 2
A Product Line of
Diodes Incorporated
DMN2300UFB
1.2
1.0
2.0
1.6
I
= 1mA
D
0.8
0.6
T
= 25°C
1.2
0.8
A
I
= 250µA
D
0.4
0.4
0
0.2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
-50 -25
0
25
50
75 100 125 150
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
1,000
100
10
100,000
10,000
T
= 125°C
A
T
= 150°C
A
T
= 125°C
A
1,000
T
= 85°C
= 25°C
A
T
= 85°C
A
T
A
100
10
1
T
= 25°C
A
T
= -55°C
A
T
= -55°C
A
1
2
4
6
8
10 12 14 16 18 20
2
4
6
8
10
12
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
Fig.10 Leakage Current vs. Gate-Source Voltage
Fig. 9 Typical Leakage Current
vs. Drain-Source Voltage
8
6
V
= 15V
= 1A
DS
I
D
4
2
0
0
0.5
1
1.5
2
2.5
3
Qg, TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
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May 2011
© Diodes Incorporated
DMN2300UFB
Document number: DS35235 Rev. 1 - 2
A Product Line of
Diodes Incorporated
DMN2300UFB
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
R
(t) = r(t) * R
θJA
θJA
R
= 262°C/W
D = 0.02
θJA
0.01 D = 0.01
P(pk)
T
t
1
t
2
D = 0.005
- T = P * R (t)
J
A
θJA
Duty Cycle, D = t /t
1
2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (s)
Fig. 12 Transient Thermal Response
Package Outline Dimensions
A
DFN1006-3
Dim Min
Max Typ
0.53 0.50
0.05 0.03
0.20 0.15
0.55 0.50
A1
A
A1
b1
b2
D
0.47
0
0.10
0.45
D
0.95 1.075 1.00
0.55 0.675 0.60
b1
E
e
0.35
0.30 0.25
0.30 0.25
⎯
0.20
0.20
⎯
⎯
e
b2
E
L1
L2
L3
0.40
⎯
All Dimensions in mm
L2
L3
L1
Suggested Pad Layout
C
Dimensions Value (in mm)
X1
Z
G1
G2
X
X1
Y
1.1
0.3
0.2
0.7
0.25
0.4
0.7
G2
X
G1
Y
C
Z
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May 2011
© Diodes Incorporated
DMN2300UFB
Document number: DS35235 Rev. 1 - 2
A Product Line of
Diodes Incorporated
DMN2300UFB
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
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May 2011
© Diodes Incorporated
DMN2300UFB
Document number: DS35235 Rev. 1 - 2
相关型号：
DMN2320UFB4-7B
Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, X2-DFN1006-3, 3 PIN
DIODES
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