DMN2230U [TYSEMI]
N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance; N沟道增强型MOSFET的低导通电阻
| 型号： | DMN2230U |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | N-CHANNEL ENHANCEMENT MODE MOSFET Low On-Resistance |
| 文件： | 总2页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product specification
DMN2230U
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
•
Low On-Resistance
•
•
Case: SOT23
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
•
•
•
110 mΩ @ VGS = 4.5V
145 mΩ @ VGS = 2.5V
230 mΩ @ VGS = 1.8V
•
•
•
•
•
•
•
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 1, 2 and 3)
•
•
Qualified to AEC-Q101 Standards for High Reliability
SOT23
D
G
S
Top View
Top View
Ordering Information (Note 4)
Part Number
Case
Packaging
DMN2230U-7
SOT23
3000/Tape & Reel
Notes:
1. No purposefully added lead. Halogen and Antimony Free.
2. Product manufactured with Green Molding Compound and does not contain Halogens or Sb2O3 Fire Retardants.
Marking Information
22N = Marking Code
YM = Date Code Marking
Y = Year (ex: U = 2007)
M = Month (ex: 9 = September)
22N
Date Code Key
Year
2007
2008
2009
2010
2011
2012
2013
2014
2015
2016
2017
Code
U
V
W
X
Y
Z
A
B
C
D
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
http://www.twtysemi.com
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Product specification
DMN2230U
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
VGSS
ID
Value
Units
20
±12
2.0
7
V
V
A
A
Gate-Source Voltage
Drain Current (Note 5)
Pulsed Drain Current (Note 6)
IDM
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 5)
Symbol
Value
600
Units
mW
°C/W
°C
PD
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
208
Rθ
JA
-55 to +150
TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol Min
Typ Max Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
20
⎯
⎯
V
BVDSS
IDSS
⎯
⎯
⎯
⎯
1
VGS = 0V, ID = 10μA
μA VDS = 20V, VGS = 0V
μA
IGSS
±10
VGS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.5
1.0
V
VGS(th)
⎯
VDS = VCS, ID = 250μA
GS = 4.5V, ID = 2.5A
V
81
113
170
110
145
230
Static Drain-Source On-Resistance
RDS (ON)
⎯
mΩ VGS = 2.5V, ID = 1.5A
VGS = 1.8V, ID = 1.0A
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS
Input Capacitance
5
S
V
|Yfs|
VSD
⎯
⎯
⎯
1.1
VDS = 5V, ID = 2.4A
0.8
VGS = 0V, IS = 1.05A
188
44
pF
pF
pF
nC
nC
nC
Ciss
Coss
Crss
Qg
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
VDS = 10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
30
2.3
0.3
0.5
8
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
td(on)
tr
VDS = 10V, ID = 11.6A
Turn-On Delay Time
Rise Time
3.8
19.6
8.3
VDD = 10V, RL = 10Ω
ID = 1A, VGEN = 4.5V, RG = 6Ω
ns
Turn-Off Delay Time
Fall Time
td(off)
tf
Notes:
3. Device mounted on FR-4 PCB, or minimum recommended pad layout
4. Repetitive rating, pulse width limited by junction temperature.
5. Short duration pulse test used to minimize self-heating effect.
http://www.twtysemi.com
sales@twtysemi.com
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