DMN2250UFB-7B [DIODES]
Low On-Resistance;
| 型号： | DMN2250UFB-7B |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Low On-Resistance |
| 文件： | 总6页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN2250UFB
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
•
•
•
•
•
•
•
•
Low On-Resistance
ID
V(BR)DSS
RDS(on) max
Very Low Gate Threshold Voltage VGS(TH), 1.0V max
Low Input Capacitance
Fast Switching Speed
TA = +25°C
1.35A
1.15A
1.10A
0.17Ω @ VGS = 4.5V
0.23Ω @ VGS = 2.5V
0.25Ω @ VGS = 1.8V
20V
ESD Protected Gate
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
)
•
•
Case: X1-DFN1006-3
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
•
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Applications
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
e4
•
•
DC-DC Converters
Power Management Functions
per MIL-STD-202, Method 208
•
Weight: 0.001 grams (approximate)
Drain
X1-DFN1006-3
Body
Diode
Gate
S
D
Gate
Protection
Diode
G
Source
Bottom View
Top View
Internal Schematic
ESD PROTECTED
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN2250UFB-7B
Case
X1-DFN1006-3
Packaging
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Z5 = Product Type Marking Code
Bar Denotes Gate and Source Side
Z5
Top View
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February 2013
© Diodes Incorporated
DMN2250UFB
Document number: DS36035 Rev. 3 - 2
DMN2250UFB
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
20
Units
V
V
Gate-Source Voltage
±8
VGSS
TA = +25°C
A = +70°C
Steady
State
1.35
1.03
A
Continuous Drain Current (Note 5) VGS = 4.5V
ID
T
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
6
1
A
A
IDM
IS
Maximum Body Diode continuous Current
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
PD
Value
0.5
Units
TA = +25°C
Total Power Dissipation (Note 5)
W
0.3
278
TA = +70°C
Steady state
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
°C/W
°C
Rθ
JA
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
20
—
—
—
—
—
—
100
±1
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V
VGS = ±6V, VDS = 0V
nA
µA
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
IGSS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
—
—
0.35
—
1.0
170
230
250
—
V
VGS(th)
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 1A
VGS = 2.5V, ID = 1A
VGS = 1.8V, ID = 1A
VDS = 10V, ID = 1A
VGS = 0V, IS = 150mA
—
Static Drain-Source On-Resistance
mΩ
RDS (ON)
—
—
—
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
1.4
0.7
S
V
|Yfs|
VSD
1.2
—
—
—
—
—
—
—
—
—
—
—
—
94
12
10
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS =16V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
87.1
1.4
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
nC
nC
nC
ns
ns
ns
ns
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Qg
3.1
Qg
V
DS = 10V, ID = 250mA
0.13
0.14
4.3
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
Turn-On Delay Time
VDD = 10V, VGS = 4.5V,
RL = 47Ω, RG = 10Ω,
6.1
Turn-On Rise Time
59.4
25.4
Turn-Off Delay Time
tD(off)
tf
I
D = 200mA
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
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February 2013
© Diodes Incorporated
DMN2250UFB
Document number: DS36035 Rev. 3 - 2
DMN2250UFB
3.0
2.5
2.0
1.5
V
= 5.0V
DS
V
= 1.5V
GS
V
V
V
V
V
V
V
= 1.8V
= 2.0V
= 2.5V
= 3.0V
= 4.0V
= 4.5V
= 8.0V
GS
GS
GS
GS
GS
GS
GS
2.0
1.5
1.0
1.0
V
= 1.2V
GS
T
= 150°C
A
0.5
0
T
= 125°C
A
T
= 85°C
A
0.5
0
T
= 25°C
A
V
= 1.0V
GS
T
= -55°C
A
0
1
2
3
4
5
0
0.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
1.0
1.5
2.0
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
0.30
0.25
0.5
0.4
0.20
0.15
0.10
V
= 1.8V
GS
V
V
= 2.5V
= 8.0V
GS
I
= 1.0A
0.3
D
V
= 4.5V
GS
GS
0.2
0.1
0.05
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
ID, DRAIN-SOURCE CURRENT (A)
0
1
2
3
4
5
6
7
8
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.30
0.25
1.8
1.6
V
= 4.5V
GS
V
= 2.5V
GS
I
= 500mA
D
T
= 150°C
= 125°C
A
0.20
0.15
0.10
1.4
1.2
1.0
T
A
T
T
= 85°C
A
V
= 4.5V
GS
= 500mA
I
D
= 25°C
A
A
V
= 1.8V
GS
I
= 200mA
D
T
= -55°C
0.8
0.6
0.05
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
ID, DRAIN CURRENT (A)
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
°
C)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
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February 2013
© Diodes Incorporated
DMN2250UFB
Document number: DS36035 Rev. 3 - 2
DMN2250UFB
1.0
0.8
0.6
0.30
0.25
V
= 1.8V
GS
I
= 200mA
D
V
I
= 2.5V
GS
0.20
0.15
0.10
= 500mA
D
I
= 1mA
D
V
= 4.5V
GS
I
= 500mA
D
I
= 250µA
D
0.4
0.2
0
0.05
0
-50 -25
0
25
50
75 100 125 150
C)
Figure 7 On-Resistance Variation with Temperature
-50 -25
0
25
50 75 100 125 150
C)
TJ, JUNCTION TEMPERATURE (
°
TJ, JUNCTION TEMPERATURE (°
Figure 8 Gate Threshold Variation vs. Ambient Temperature
1,000
2.0
1.8
f = 1MHz
1.6
1.4
1.2
1.0
0.8
0.6
0.4
100
C
iss
C
T
= 150°C
oss
A
10
T
= 125°C
A
C
rss
T
= 85°C
A
T
= 25°C
A
0.2
0
T
= -55°C
A
1
0
0.3
0.6
0.9
1.2
0
2
4
6
8
10 12 14 16 18 20
VSD, SOURCE-DRAIN VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
Figure 10 Typical Junction Capacitance
10
8
V
I
= 10V
DS
= 250mA
D
6
4
2
0
0
0.5
1.0
1.5
2.0
2.5
3.0 3.5
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
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February 2013
© Diodes Incorporated
DMN2250UFB
Document number: DS36035 Rev. 3 - 2
DMN2250UFB
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
X1-DFN1006-3
Dim Min Max Typ
A1
A
A1
b1
b2
D
E
e
L1
L2
L3
0.47
0
0.10
0.45
0.53 0.50
0.05 0.03
0.20 0.15
0.55 0.50
D
0.95 1.075 1.00
0.55 0.675 0.60
⎯
0.20
0.20
⎯
b1
e
b2
E
0.35
⎯
0.30 0.25
0.30 0.25
0.40
⎯
All Dimensions in mm
L2
L3
L1
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C
Dimensions Value (in mm)
X
1
Z
G1
G2
X
1.1
0.3
0.2
0.7
0.25
0.4
0.7
G2
X
X1
Y
G1
C
Y
Z
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February 2013
© Diodes Incorporated
DMN2250UFB
Document number: DS36035 Rev. 3 - 2
DMN2250UFB
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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website, harmless against all damages.
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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© Diodes Incorporated
DMN2250UFB
Document number: DS36035 Rev. 3 - 2
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