TSA1036CXRF [TSC]
General Purpose PNP Transistor; 通用PNP晶体管
| 型号： | TSA1036CXRF |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | General Purpose PNP Transistor |
| 文件： | 总4页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSA1036
General Purpose PNP Transistor
SOT-23
PRODUCT SUMMARY
Pin Definition:
1. Base
2. Emitter
BVCBO
BVCEO
IC
-60V
3. Collector
-60V
-0.6A
VCE(SAT)
-0.4V @ IC / IB = -150mA / -15mA
Features
Ordering Information
●
Low VCE(SAT) -0.4 @ IC / IB = -150mA / -15mA
Complementary part with TSC2411
Part No.
Package
SOT-23
Packing
●
TSA1036CX RF
3Kpcs / 7” Reel
Structure
●
Epitaxial Planar Type
PNP Silicon Transistor
●
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
IC
-60
-60
V
-5
V
Collector Current
-0.6
A
Collector Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction Temperature
PD
225
mW
oC/W
oC
RθJA
556
TJ
+150
- 55 to +150
Operating Junction and Storage Temperature Range
TSTG
oC
Note: Single pulse, Pw≤350us, Duty≤2%
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Min
Typ
--
Max
--
Unit
Collector-Base Breakdown Voltage
IC = -10uA, IE = 0
-60
-60
-5
V
V
Collector-Emitter Breakdown Voltage IC = -10mA, IB = 0
--
--
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IE = -10uA, IC = 0
--
--
V
VCB = -50V, IE = 0
--
--
-10
-50
-0.4
-1.3
--
nA
nA
V
Emitter Cutoff Current
VEB = -0.5V, IC = 0
IEBO
--
--
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC / IB = -150mA / -15mA
IC / IB = -500mA / -50mA
VCE = -10V, IC = -0.1A
VCE = -10V, IC = -150mA
VCE =-5V, IC=-50mA,
f=100MHz
*VCE(SAT)
*VBE(SAT)
--
--
--
--
V
*hFE
*hFE
1
2
75
100
--
DC Current Transfer Ratio
--
300
Transition Frequency
Output Capacitance
fT
200
--
--
--
--
8
MHz
pF
VCB = -10V, f=1MHz
Cob
* Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2%
1/4
Version: A09
TSA1036
General Purpose PNP Transistor
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. DC Current Gain
Figure 2. VCE(SAT) v.s. Ic
Figure 3. VBE(SAT) v.s. Ic
Figure 4. Cutoff Frequency vs. Ic
Figure 5. Power Derating Curve
2/4
Version: A09
TSA1036
General Purpose PNP Transistor
SOT-23 Mechanical Drawing
SOT-23 DIMENSION
MILLIMETERS
MIN MAX
0.95 BSC
1.9 BSC
2.60
INCHES
MIN MAX.
DIM
A
A1
B
C
D
E
F
0.037 BSC
0.074 BSC
3.00
1.70
3.10
1.30
0.10
0.50
0.20
0.60
10º
0.102
0.118
0.067
0.122
0.051
0.004
0.020
0.008
0.024
10º
1.40
2.80
1.00
0.00
0.35
0.10
0.30
5º
0.055
0.110
0.039
0.000
0.014
0.004
0.012
5º
G
H
I
J
3/4
Version: A09
TSA1036
General Purpose PNP Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
4/4
Version: A09
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