TSA114ENND03 [JCST]
Transistor;
| 型号： | TSA114ENND03 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：420K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate Transistors
O
TSA114ENND03 TRANSISTOR
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
TOP
DESCRIPTION
PNP Digital Transistor
I
G
O
FEATURES
1. IN
1) Built-in biasresistors enable theconfiguration of an inverter
circuit without connecting external input resistors
2. GND
3. OUT
BACK
2) The bias resistors consist of thin-film resistors with complete
isolation to allow positive biasing of the input.They also have
the advantage of almost completely eliminating parasitic effects
G
I
3) Only the on/off conditions need to be set for operation,
making device design easy
APPLICATION
PNP Digital Transistor
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.)
MARKING: 14
O
equivalent circuit
14
I
G
Absolute maximum ratings(Ta=25℃)
Parameter
Symbol
VCC
VIN
Value
-50
Units
Supply voltage
Input voltage
V
V
-40~10
-50
IO
Output current
mA
IC(MAX)
-100
Power dissipation
Pd
150
mW
℃
Junction temperature
Storage temperature
Tj
150
Tstg
-55~150
℃
Electrical characteristics (Ta=25℃)
Parameter
Symbol
VI(off)
VI(on)
VO(on)
II
Min
Typ
Max
-3
Unit
Conditions
VCC=-5V ,IO=-100μA
VO=-0.3V ,IO=-10 mA
IO/II=-10mA/-0.5mA
VI=-5V
-0.5
Input voltage
V
Output voltage
Input current
-0.3
-0.88
-0.5
V
mA
μA
Output current
IO(off)
GI
VCC=-50V, VI=0
DC current gain
Input resistance
Resistance ratio
Transition frequency
30
7
VO=-5V ,IO=-5mA
R1
10
1
13
KΩ
R2/R1
fT
0.8
1.2
250
MHz
VCE=-10V ,IE=5mA,f=100MHz
B,Jul,2011
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