TSA114TNND03 [JCST]
Transistor;
| 型号： | TSA114TNND03 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：491K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate Transistors
O
TSA114TNND03 TRANSISTOR
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
TOP
DESCRIPTION
PNP Digital Transistor
I
G
O
FEATURES
1. IN
1) Built-in biasresistors enable theconfiguration of an inverter circuit
without connecting external input resistors (see equivalent circuit)
2. GND
3. OUT
BACK
2) The bias resistors consist of thin-film resistors with complete isolation
to allow positive biasing of the input. They also have the advantage
of almost completely eliminating parasitic effects
G
I
3) Only the on/off conditions need to be set for operation, making device design easy
APPLICATION
PNP Digital Transistor
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.)
MARKING: 94
O
94
I
G
MAXIMUM RATINGS (Ta=25℃unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Limits
-50
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
-50
V
-5
V
-100
150
mA
mW
℃
PC
TJ
Junction Temperature
Storage Temperature
150
Tstg
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC=-50μA,IE=0
Min
-50
-50
-5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
IC=-1mA,IB=0
V
IE=-50μA,IC=0
V
VCB=-50V,IE=0
-0.5
-0.5
600
-0.3
μA
μA
IEBO
VEB=-4V,IC=0
DC current gain
hFE
VCE=-5V,IC=-1mA
IC=-10mA,IB=-1mA
VCE=-10V,IC=-5mA, f=100MHz
100
7
250
Collector-emitter saturation voltage
Transition frequency
VCE(sat)
fT
V
250
10
MHz
KΩ
Imput resistor
R1
13
A,Jun,2011
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